Cathodoluminescence Spectroscopy of Boron Nitride Films

1994 ◽  
Vol 339 ◽  
Author(s):  
C. A. Taylor ◽  
S. W. Brown ◽  
V. Subramaniam ◽  
S. Kidner ◽  
S. C. Rand ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Deep Level ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
Growth Conditions ◽  
Ion Source ◽  
Substrate Bias Voltage ◽  
Cathodoluminescence Spectroscopy ◽  
Boron Nitride Films

ABSTRACTWe report results from cathodoluminescence spectroscopy of boron nitride films grown on Si (100) substrates by ECR ion source assisted magnetron sputtering of a hexagonal BN target. Three main peaks are observed in the near-bandgap region for hexagonal boron nitride films at energies of 4.90 eV, 5.31 eV, and 5.50 eV. In addition, deep-level emission spectra of predominantly cubic boron nitride films are correlated with sample growth conditions. In particular we show that the emission intensity, position, and linewidth are strongly dependent on the substrate bias voltage used during sample growth.

Laser Deposited Cubic Boron Nitride Films

1990 ◽  
Vol 191 ◽  
Author(s):  
Gary L. Doll ◽  
Jeffrey A. Sell ◽  
Lourdes Salamanca-riba ◽  
Ashwin K. Ballal
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
Optical Emission ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTWe report the successful growth of cubic boron nitride thin films on single crystal 100 silicon by using pulsed excimer laser ablation of a hexagonal boron nitride bulk target. Optical emission spectra were obtained during the film deposition giving insight into the deposition mechanism. The deposited films were characterized by transmission electron microscopy, scanning electron microscopy, optical microscopy, x-ray diffraction, and Auger electron microscopy. Regions of the films were found to exhibit epitaxy with the substrate.

scholarly journals Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
T. A. Friedmann ◽  
D. L. Medlin ◽  
P. B. Mirkarimi ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Growth Parameters ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Growth Time ◽  
Grain Sizes ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Parametric Studies ◽  
Boron Nitride Films

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25 - 800°C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. In order to understand and optimize the growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp3-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30- 40 nm. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm-1 and the position decreases with growth time to a constant value of 1085 cm-1. Since in bulk cBN this IR mode appears at 1065 cm-1, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

Influence of d.c. substrate bias voltage on growth of cubic boron nitride films by radio frequency sputter

2000 ◽  
Vol 9 (9-10) ◽  
pp. 1779-1781
Author(s):  
Jinxiang Deng ◽  
Bo Wang ◽  
Liwen Tan ◽  
Bentao Cui ◽  
Hui Yan ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Radio Frequency ◽  
Bias Voltage ◽  
Cubic Boron Nitride ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Boron Nitride Films

Effects of Excimer Laser Ablation on the Surface of Hexagonal Boron Nitride

1990 ◽  
Vol 201 ◽  
Author(s):  
G. L. Doll ◽  
T. A. Perry ◽  
J. A. Sell
Keyword(s):  
Laser Ablation ◽  
Boron Nitride ◽  
Gas Phase ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Excimer Laser Ablation ◽  
Induced Changes ◽  
Boron Nitride Films ◽  
Morphology Changes

AbstractThe laser-induced changes in the hexagonal boron nitride targets that are used in the deposition of pulsed laser-deposited cubic boron nitride films are examined. Although the structure of the hexagonal boron nitride in the irradiated areas is unaltered, the surface morphology changes considerably. Boron-rich spheroids were found to cover the irradiated area. Their origin is consistent with the hydrodynamic sputtering of the hexagonal boron nitride targets, and a liberation of nitrogen atoms to the gas phase.

Synthesis of centimeter-scale high-quality polycrystalline hexagonal boron nitride films from the Fe flux

Nanoscale ◽  
2021 ◽  
Author(s):  
Yifei Li ◽  
Xin Wen ◽  
Changjie Tan ◽  
Ning Li ◽  
Ruijie Li ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
High Quality ◽  
Boron Nitride Films

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...

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