Surface microstructure analysis of cubic boron nitride films by transmission electron microscopy

2006 ◽  
Vol 88 (3) ◽  
pp. 031904 ◽  
Author(s):  
X. M. Meng ◽  
W. J. Zhang ◽  
C. Y. Chan ◽  
C. S. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Microstructure Analysis ◽  
Surface Microstructure ◽  
Transmission Electron ◽  
Boron Nitride Films

X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon

1990 ◽  
Vol 202 ◽  
Author(s):  
G. L. Doll ◽  
J. A. Sell ◽  
A. Wims ◽  
C. A. Taylor ◽  
R. Clarke
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matching ◽  
Excimer Laser Ablation ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTWe report the growth of boron nitride films on (001), (110), and (111) faces of silicon using the method of pulsed excimer laser ablation. The structure of the Alms grown on the (001) and (110) orientations of Si is cubic zincblende with a lattice constant of 3.619 Å. The films were found to be heteroepitaxial on silicon (001) with the cubic BN (100) axes parallel to Si (100), as characterized by x-ray diffraction and high-resolution transmission electron microscopy. In that system, we find evidence for an unusual 3:2 commensurate lattice matching. The films appear to cubic but randomly oriented on the Si (110), and no evidence for crystallinity is found for films grown on Si (111).

Laser Deposited Cubic Boron Nitride Films

1990 ◽  
Vol 191 ◽  
Author(s):  
Gary L. Doll ◽  
Jeffrey A. Sell ◽  
Lourdes Salamanca-riba ◽  
Ashwin K. Ballal
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
Optical Emission ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTWe report the successful growth of cubic boron nitride thin films on single crystal 100 silicon by using pulsed excimer laser ablation of a hexagonal boron nitride bulk target. Optical emission spectra were obtained during the film deposition giving insight into the deposition mechanism. The deposited films were characterized by transmission electron microscopy, scanning electron microscopy, optical microscopy, x-ray diffraction, and Auger electron microscopy. Regions of the films were found to exhibit epitaxy with the substrate.

scholarly journals Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
T. A. Friedmann ◽  
D. L. Medlin ◽  
P. B. Mirkarimi ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Growth Parameters ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Growth Time ◽  
Grain Sizes ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Parametric Studies ◽  
Boron Nitride Films

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25 - 800°C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. In order to understand and optimize the growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp3-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30- 40 nm. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm-1 and the position decreases with growth time to a constant value of 1085 cm-1. Since in bulk cBN this IR mode appears at 1065 cm-1, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

scholarly journals Synthesize and Characterization of Hollow Boron-Nitride Nanocages

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
W. S. Zhang ◽  
J. G. Zheng ◽  
W. F. Li ◽  
D. Y. Geng ◽  
Z. D. Zhang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Growth Mechanism ◽  
Spherical Shape ◽  
Amorphous Boron ◽  
Transmission Electron ◽  
Ammonia Atmosphere

The boron-nitride (BN) nanocages are synthesized by nitrogenation of amorphous boron nanoparticles at 1073 K under nitrogen and ammonia atmosphere. The BN nanocages exhibit a well-crystallized feature with nearly pentagonal or spherical shape, depending on their size. High-resolution transmission electron microscopy studies reveal that they are hollow nanocages. The growth mechanism of the BN nanocages is proposed.

Boron Nitride Nanotubes: Nanoparticles Functionalization and Junction Fabrication

2007 ◽  
Vol 7 (2) ◽  
pp. 530-534 ◽  
Author(s):  
Chunyi Zhi ◽  
Yoshio Bando ◽  
Guozhen Shen ◽  
Chengchun Tang ◽  
Dmitri Golberg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Boron Nitride Nanotubes ◽  
X Ray Diffraction ◽  
Carbon Nanostructure ◽  
Wet Chemistry ◽  
X Ray ◽  
Transmission Electron ◽  
First Time

Adopting a wet chemistry method, Au and Fe3O4 nanoparticles were functionalized on boron nitride nanotubes (BNNTs) successfully for the first time. X-ray diffraction pattern and transmission electron microscopy were used to characterize the resultant products. Subsequently, a method was proposed to fabricate heterojunction structures based on the particle-functionalized BNNTs. As a demonstration, BNNT-carbon nanostructure, BNNT-ZnO and BNNT-Ga2O3 junctions were successfully fabricated using the functionalized particles as catalysts.

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