Chemical Vapor Deposition of Binary Metal Germanides

1990 ◽  
Vol 187 ◽  
Author(s):  
M.J. Hampden-Smith ◽  
J. Garvey ◽  
D. Lei ◽  
J.C. Huffman
Keyword(s):  
Thermal Decomposition ◽  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Solution Model ◽  
Binary Metal ◽  
Decomposition Experiments

AbstractA series of transition metal substituted germacyclopent-3-ene compounds containing transition metal-germanium bonds have been prepared with supporting ligands which are designed to be easily removed either thermally or photochemically. In solution, model thermal decomposition experiments show that either the geramanium or the transition metal substituents may be removed, depending on the nature of the metal. Preliminary hot-wall CVD experiments using manganese and cobalt derivatives result in films with small grain size.

Quantitative Modelling of Nucleation Kinetics in Experiments for Poly-Si Growth on Sio2 by Hot-Wire Chemical Vapor Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
Maribeth Swiatek ◽  
Jason K. Holt ◽  
Harry A. Atwater
Keyword(s):  
Activation Energy ◽  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Hot Wire ◽  
Nucleation Kinetics ◽  
Temperature Dependent ◽  
Cluster Density

ABSTRACTWe apply a rate-equation pair binding model of nucleation kinetics [1] to the nucleation of Si islands grown by hot-wire chemical vapor deposition on SiO2 substrates. Previously, we had demonstrated an increase in grain size of polycrystalline Si films with H2 dilution from 40 nm using 100 mTorr of 1% SiH4 in He to 85 nm with the addition of 20 mTorr H2. [2] This increase in grain size is attributed to atomic H etching of Si monomers rather than stable Si clusters during the early stages of nucleation, decreasing the nucleation density. Atomic force microscopy (AFM) measurements show that the nucleation density increases sublinearly with time at low coverage, implying a fast nucleation rate until a critical density is reached, after which grain growth begins. The nucleation density decreases with increasing H2 dilution (H2:SiH4), which is an effect of the etching mechanism, and with increasing temperature, due to enhanced Si monomer diffusivity on SiO2. From temperature-dependent measurements, we estimate the activation energy for surface diffusion of Si monomers on SiO2 to be 0.47 ± 0.09 eV. Simulations of the temperature-dependent supercritical cluster density lead to an estimated activation energy of 0.42 eV ± 0.01 eV and a surface diffusion coefficient prefactor of 0.1 ± 0.03 cm2/s. H2-dilution-dependent simulations of the supercritical cluster density show an approximately linear relationship between the H2 dilution and the etch rate of clusters.

Rapid and mass-producible synthesis of high-crystallinity MoSe2 nanosheets by ampoule-loaded chemical vapor deposition

Nanoscale ◽  
2020 ◽  
Vol 12 (13) ◽  
pp. 6991-6999 ◽  
Author(s):  
Na Liu ◽  
Woong Choi ◽  
Hyeongi Kim ◽  
Chulseung Jung ◽  
Jeonghun Kim ◽  
...  
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rapid Growth ◽  
Chemical Vapor ◽  
High Crystallinity

Rapid growth of high-crystalline MoSe2 nanosheets with grain size of up to ∼100 μm and yield of milligrams per hour.

Effects of Process Parameters on Graphene Growth Via Low-Pressure Chemical Vapor Deposition

2020 ◽  
Vol 8 (3) ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
Low Pressure ◽  
Large Set ◽  
Graphene Growth ◽  
Pressure Chemical

Abstract Graphene has attracted enormous research interest due to its extraordinary material properties. Process control to achieve high-quality graphene is indispensable for graphene-based applications. This research investigates the effects of process parameters on graphene quality in a low-pressure chemical vapor deposition (LPCVD) graphene growth process. A fractional factorial design of experiment is conducted to provide understanding on not only the main effect of process parameters, but also the interaction effect among them. Graphene quality including the number of layers and grain size is analyzed. To achieve monolayer graphene with large grain size, a condition with low CH4–H2 ratio, short growth time, high growth pressure, high growth temperature, and slow cooling rate is recommended. This study considers a large set of process parameters with their interaction effects and provides guidelines to optimize graphene growth via LPCVD focusing on the number of graphene layers and the grain size.

scholarly journals Sequential bottom-up and top-down processing for the synthesis of transition metal dichalcogenide nanosheets: the case of rhenium disulfide (ReS2)

2016 ◽  
Vol 52 (50) ◽  
pp. 7878-7881 ◽  
Author(s):  
Naktal Al-Dulaimi ◽  
Edward A. Lewis ◽  
David J. Lewis ◽  
Simon K. Howell ◽  
Sarah J. Haigh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Liquid Phase ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transition Metal Dichalcogenide ◽  
Top Down ◽  
Bottom Up ◽  
Liquid Phase Exfoliation ◽  
Methyl Pyrrolidone

Bottom-up (aerosol-assisted chemical vapor deposition, AACVD) and top-down (liquid phase exfoliation, LPE) processing methodologies are used in tandem to produce colloids of few-layer thick rhenium disulfide (ReS2) in N-methyl pyrrolidone.

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