Effects of Process Parameters on Graphene Growth Via Low-Pressure Chemical Vapor Deposition

2020 ◽  
Vol 8 (3) ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
Low Pressure ◽  
Large Set ◽  
Graphene Growth ◽  
Pressure Chemical

Abstract Graphene has attracted enormous research interest due to its extraordinary material properties. Process control to achieve high-quality graphene is indispensable for graphene-based applications. This research investigates the effects of process parameters on graphene quality in a low-pressure chemical vapor deposition (LPCVD) graphene growth process. A fractional factorial design of experiment is conducted to provide understanding on not only the main effect of process parameters, but also the interaction effect among them. Graphene quality including the number of layers and grain size is analyzed. To achieve monolayer graphene with large grain size, a condition with low CH4–H2 ratio, short growth time, high growth pressure, high growth temperature, and slow cooling rate is recommended. This study considers a large set of process parameters with their interaction effects and provides guidelines to optimize graphene growth via LPCVD focusing on the number of graphene layers and the grain size.

In Situ Contamination Control Investigation of Silicon Nitride Low Pressure Chemical Vapor Deposition Process in Vertical Thermal Reactors

1992 ◽  
Vol 259 ◽  
Author(s):  
Mansour Moinpour ◽  
K. Bohannan ◽  
M. Shenasa ◽  
A. Sharif ◽  
G. Guzzo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Contamination Control ◽  
Pressure Chemical

ABSTRACTA contamination control study of a Silicon Valley Group Thermco Systems Vertical Thermal Reactor(VTR) is presented. Trace elements of contaminants such as water vapor and oxygen have been shown to significantly affect the integrity of the silicon nitride film deposited by the low pressure chemical vapor deposition (LPCVD) process. This study documented the effects of process parameters on gaseous contamination levels, i.e., O2 and H2O vapor. Starting with a baseline process, the effects of an excursion of pre-deposition temperature ramp-up and stabilization condition, wafer load/unload and various post deposition conditions were explored. An axial profile of moisture and oxygen levels along the wafer load was obtained using Linde's Low Pressure Reactor Analysis(LPRAS) methodology. In addition, other process parameters such as gas flow rates during load and unload of wafers, pre-deposition N2 purge and process tube exposure time to ambient environment were- investigated. The wafers were analyzed for contaminants on the wafer surface or in the deposited silicon nitride film using FTIR and Auger spectroscopy techniques. They showed low levels of Si-O and no measurable Si-H or N-H bonds.

Boron Doping Effects on the Electro-optical Properties of Zinc Oxide Thin Films Deposited by Low-Pressure Chemical Vapor Deposition Process

2006 ◽  
Vol 928 ◽  
Author(s):  
Jerome Steinhauser ◽  
Sylvie Faÿ ◽  
Romain Schlüchter ◽  
Seung Yeop Myong ◽  
Evelyne Vallat ◽  
...  
Keyword(s):  
Grain Size ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Free Carrier ◽  
Zno Films ◽  
Pressure Chemical ◽  
Doped Zno

ABSTRACTBoron-doped zinc oxide (ZnO) films deposited by Low-Pressure Chemical Vapor Deposition (LPCVD) technique are used as Transparent Conductive Oxide (TCO) to contact thin-film silicon solar cells. In this paper, the effect of boron introduced as dopant during ZnO formation is studied. These films are highly transparent in the visible range, whereas in the near infrared region their transmittance decreases with the increase of boron content due to free carrier absorption (FCA). A shifting of the fondamental band gap is also observed. The resistivity decreases of about one order of magnitude with the increase of the doping ratio ([B2H6]/[DEZ]) from 0 to 2. This resistivity drop is mainly due to an increase of the free carrier concentration. In low doped samples, Hall mobility increases with grain size, whereas it shows no grain size dependence in highly doped layers. This suggest that the scattering by grain-boundary is the main limiting factor for transport in low doped ZnO samples, whereas in highly doped ZnO films transport is controlled by the ionized impurity scattering within the grains.

Epitaxial Growth of Co3O4 Films by Low Temperature, Low Pressure Chemical Vapor Deposition

2000 ◽  
Vol 619 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
R. Lakshmi ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
Low Pressure ◽  
Growth Surface ◽  
Organic Chemical ◽  
Epitaxial Thin Films ◽  
Pressure Chemical

ABSTRACTThe growth of strongly oriented or epitaxial thin films of metal oxides generally requires relatively high growth temperatures or infusion of energy to the growth surface through means such as ion bombardment. We have grown high quality epitaxial thin films of Co3O4 on different substrates at a temperature as low as 450°C by low-pressure metal-organic chemical vapor deposition (MOCVD) using cobalt(II) acetylacetonate as the precursor. With oxygen as the reactant gas, polycrystalline Co3O4 films are formed on glass and Si(100) in the temperature range 350-550°C. Under similar conditions of growth, highly oriented films of Co3O4 are formed on SrTiO3(100) and LaAlO3(100). The film on LaAlO3(100) grown at 450°C show a rocking curve FWHM of 1.61°, which reduces to 1.32° when it is annealed in oxygen at 725°C. The film on SrTiO3(100) has a FWHM of 0.330 (as deposited) and 0.29° (after annealing at 725°C). The ø-scan analysis shows cube-on-cube epitaxy on both these substrates. The quality of epitaxy on SrTiO3(100) is comparable to the best of the pervoskite-based oxide thin films grown at significantly higher temperatures.

scholarly journals Relationship between heating atmosphere and copper foil impurities during graphene growth via low pressure chemical vapor deposition

Carbon ◽  
2016 ◽  
Vol 109 ◽  
pp. 529-541 ◽  
Author(s):  
Yasemin Çelik ◽  
Walter Escoffier ◽  
Ming Yang ◽  
Emmanuel Flahaut ◽  
Ender Suvacı
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Copper Foil ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Graphene Growth ◽  
Pressure Chemical

Effects of H2 annealing on polycrystalline copper substrates for graphene growth during low pressure chemical vapor deposition

2015 ◽  
Vol 153 ◽  
pp. 132-135 ◽  
Author(s):  
Jian Liu ◽  
Siva P. Adusumilli ◽  
John J. Condoluci ◽  
Alok C. Rastogi ◽  
William E. Bernier ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Polycrystalline Copper ◽  
Graphene Growth ◽  
Pressure Chemical
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