Investigations of an Antimony Doped Poly-Silicon Gate Structure for P-Type JFET Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
Anders SÖDERBÄrg ◽  
Ö. Grelsson ◽  
U. Magnusson
Keyword(s):  
Amorphous Silicon ◽  
Experimental Evaluation ◽  
Solid Phase ◽  
Silicon Layer ◽  
Fabrication Process ◽  
Subthreshold Swing ◽  
Solid Phase Epitaxy ◽  
Polysilicon Gate ◽  
Gate Structure ◽  
P Type

AbstractA polysilicon gate structure for application as gate material in p-channel JFET's is presented. The structure was manufactured using solid-phase epitaxy of an evaporated antimony/amorphous—silicon layer. The fabrication process together with experimental evaluation of both diode and JFET characteristics is given. The structure shows near ideal n+p-junction behaviour and the fabricated JFET's are normally off with good values of subthreshold swing and transconductance.

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

scholarly journals Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

2010 ◽  
Vol 108 (4) ◽  
pp. 044901 ◽  
Author(s):  
D. J. Pyke ◽  
J. C. McCallum ◽  
B. C. Johnson
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Thermoelectric Properties of Nanostructured Material Based on Si and GaSb

2018 ◽  
Vol 386 ◽  
pp. 102-109 ◽  
Author(s):  
Dmitrii L'vovich Goroshko ◽  
Evgeniy Y. Subbotin ◽  
Evgeniy Anatolievich Chusovitin ◽  
Semeyon A. Balagan ◽  
Konstantin N. Galkin ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Solid Phase ◽  
Silicon Layer ◽  
Nanostructured Material ◽  
Average Height ◽  
Thermoelectric Figure Of Merit ◽  
Solid Phase Epitaxy ◽  
Lateral Size ◽  
Thermoelectric Figure ◽  
Quantum Size

Successively forming GaSb islands by solid-phase epitaxy and covering them with a silicon layer, a nanostructured material containing 4 layers of GaSb nanocrystals (NCs) was grown on Si (111) surface. Due to a small size of the NCs (average height ~ 1.7 nm, average lateral size ~ 14 nm) and, as a consequence, to a significant quantum-size effect, a high electrical conductivity (~ 100 Ω-1·cm-1at 600 K) together with a low thermal conductivity (~ 1 – 1.5 W·m-1·K-1at 600 K) was obtained in the nanostructured material Si/NC_GaSb/Si. As a result, the thermoelectric figure of merit of the material has reached 0.82 at 600 K.

Mechanism for Heteroepitaxial Growth of Transparent P-Type Semiconductor:  LaCuOS by Reactive Solid-Phase Epitaxy

2004 ◽  
Vol 4 (2) ◽  
pp. 301-307 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Hiromichi Ohta ◽  
Toshiyuki Suzuki ◽  
Chizuru Honjo ◽  
Yuichi Ikuhara ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Type Semiconductor ◽  
P Type
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