scholarly journals Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

2010 ◽  
Vol 108 (4) ◽  
pp. 044901 ◽  
Author(s):  
D. J. Pyke ◽  
J. C. McCallum ◽  
B. C. Johnson
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Solid phase epitaxy of evaporated amorphous silicon films

1984 ◽  
Vol 45 (8) ◽  
pp. 874-876 ◽  
Author(s):  
M. Milosavljević ◽  
C. Jeynes ◽  
I. H. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Epitaxy

Ni-Induced Selective Nucleation and Solid Phase Epitaxy of Large-Grained Poly-Si on Glass

1999 ◽  
Vol 587 ◽  
Author(s):  
Rosaria A. Puglisi ◽  
Hiroshi Tanabe ◽  
Claudine M. Chen ◽  
Harry A. Atwater ◽  
Emanuele Rimini
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Silicon Film ◽  
Crystallization Rate ◽  
Silicon Films ◽  
Solid Phase Epitaxy ◽  
Tem Analysis ◽  
Glass Substrates

AbstractWe investigated the formation of large-grain polycrystalline silicon films on glass substrates for application in low-cost thin film crystalline silicon solar cells. Since use of glass substrates constrains process temperatures, our approach to form large-grain polycrystalline silicon templates is selective nucleation and solid phase epitaxy (SNSPE). In this process, selective crystallization of an initially amorphous silicon film, at lithographically predetermined sites, enables grain sizes larger than those observed via random crystallization. Selective heterogeneous nucleation centers were created on undoped, 75 nm thick, amorphous silicon films, by masked implantation of Ni islands, followed by annealing at temperatures below 600 °. At this temperature, the Ni precipitates into NiSi2 particles that catalyze the transition from the amorphous to the crystalline Si phase. Seeded crystallization begins at the metal islands and continues via lateral solid phase epitaxy (SPE), thus obtaining crystallized regions of several tens of square microns in one hour. We have studied the dependence of the crystallization rate on the Ni-implanted dose in the seed, in the 5×1015/cm3 - 1016/cm3range. The large grained polycrystalline Si films were then used as a substrate for molecular beam epitaxy (MBE) depositions of 1 [.proportional]m thick Si layers. Transmission electron microscopy (TEM) analysis showed a strong correlation between the substrate morphology and the deposited layer. The layer presented a large grain morphology, with sizes of about 4 [.proportional]m.

Kinetics and Mechanisms of Solid Phase Epitaxy and Competitive Processes in Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
G.L. Olson
Keyword(s):  
Amorphous Silicon ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Temperature Dependent ◽  
Solid Phase Crystallization ◽  
Induced Changes ◽  
Kinetics Of ◽  
Very High

ABSTRACTRecent progress in studies of temperature dependent kinetic competition during solid phase crystallization of silicon is reviewed. Specific areas which are emphasized include: the enhancement of solid phase epitaxial growth rates by impurity-induced changes in electronic properties at the crystal/amorphous interface, the influence of impurity diffusion and precipitation in amorphous silicon on the kinetics of epitaxial growth, the effects of impurities on the kinetic competition between solid phase epitaxy and random crystallization, and the kinetics of solid phase crystallization at very high temperatures in silicon.

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