Mechanism for Heteroepitaxial Growth of Transparent P-Type Semiconductor:  LaCuOS by Reactive Solid-Phase Epitaxy

2004 ◽  
Vol 4 (2) ◽  
pp. 301-307 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Hiromichi Ohta ◽  
Toshiyuki Suzuki ◽  
Chizuru Honjo ◽  
Yuichi Ikuhara ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Type Semiconductor ◽  
P Type

Heteroepitaxial Growth of a Wide Gap P-type Oxysulfide, LaCuOS

2002 ◽  
Vol 747 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Optical Properties ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Electrical And Optical Properties ◽  
Type Semiconductor ◽  
Wide Gap ◽  
Spe Method ◽  
P Type

ABSTRACTEpitaxial films of LaCuOS, a wide gap p-type semiconductor, were grown on yittria- stabi-lized-zirconia (YSZ) (001) or MgO (001) substrates by a reactive solid phase epitaxy (R-SPE) method. Crystal quality, electrical and optical properties on the epitaxial films on each substrate are examined in this paper. Achievement of the heteroepitaxial growth of LaCuOS on the MgO (001) substrate improves optical properties of LaCuOS such as spectral bandwidths and emission intensity, suggesting that the MgO (001) substrate is more preferable than the YSZ (001) for epitaxial growth substrate for LaCuOS.

Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy

2004 ◽  
Vol 79 (4-6) ◽  
pp. 1517-1520 ◽  
Author(s):  
H. Hiramatsu ◽  
K. Ueda ◽  
K. Takafuji ◽  
H. Ohta ◽  
M. Hirano ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Wide Gap ◽  
P Type

Heteroepitaxial Growth of Strontium Titanate on Lanthanum Aluminate Using the Metallo-Organic Decomposition Technique.

1993 ◽  
Vol 317 ◽  
Author(s):  
Gabriel Braunstein ◽  
Gustavo R. Paz-Pujalt ◽  
James F. Elman
Keyword(s):  
Solid Phase ◽  
Precursor Solution ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Potential Influence ◽  
Ion Channeling ◽  
Random Nucleation ◽  
Lanthanum Aluminate ◽  
Organic Precursors ◽  
Organic Decomposition

ABSTRACTWe demonstrate the heteroepitaxial growth of thin films of SrTiO3 prepared by the method of Metallo-organic decomposition on LaAlO3 substrates. The SrTiO3 films are prepared by spin coating and thermal decomposition of a solution of Metallo-organic precursors on single-crystal, <100> oriented, LaAK>3 substrates. Subsequent heat treatment at 1100 – 1200 °C for 1 h results in the epitaxial alignment of the SrTiO3 films with respect to the LaAlO3 substrate.The degree of alignment of the films appears to depend on their thickness, with thinner films showing better alignment (as determined by ion-channeling measurements). This behavior is interpreted as a result of the competition between solid-phase epitaxy and random nucleation, observed during the crystallization of films prepared by Metallo-organic decomposition. However, since thinner films have been prepared by dilution of the precursor solution, there is also the possibility that the concentration of the precursor solution may influence the crystallization behavior of the films.The potential influence of the precursor formulation on the crystallization mechanism is discussed.

Anomalous Solid Phase Epitaxy Near the Compensation Point in Amorphous Silicon with Boron and Phosphorus Impurity Profiles

1990 ◽  
Vol 205 ◽  
Author(s):  
Young-Jin Jeon ◽  
M. F. Becker ◽  
R. M. Walserd
Keyword(s):  
Impurity Concentration ◽  
Solid Phase ◽  
Intrinsic Rate ◽  
Solid Phase Epitaxy ◽  
Maximum Activation ◽  
Phosphorus Impurity ◽  
P Type ◽  
Laser Interferometric ◽  
Impurity Profiles ◽  
Secondary Ion

AbstractWe made high precision cw laser interferometric measurements of the variations of the rate of solid phase epitaxial regrowth (SPER) of amorphous layers on (100) silicon implanted with both boron and phosphorus. Depth profiles of SPER were correlated with the implanted boron and phosphorus distributions measured by secondary ion mass spectroscopy (SIMS). The results showed that: (1) the minimum (SPER) rate did not occur at the depth where the implanted impurity concentrations were equal; (2) the maximum activation energy for SPER (∼2.9 eV; ≈0.18 eV greater than for SPER in intrinsic Si) occurred at the depth where the regrowth rate was a minimum; (3) the regrowth rates in the dual implanted sample were different from those of the samples doped only with phosphorus at the same net phosphorusc concentration; and (4) the rate at the depth where the impurity concentrations were equal was different from the intrinsic rate. Further interpretation of the results suggests that the SPER rate in the dual implanted samples is equal to the value for intrinsic silicon at a depth where the net ionized impurity concentration is compensated. The SPER rate was a minimum at a depth where the net ionized impurity concentration was slightly p type.

Solid-Phase Epitaxial Growth of A-Site-Ordered Perovskite Sr4−xErxCo4O12−δ: A Room Temperature Ferrimagnetic p-Type Semiconductor

2015 ◽  
Vol 1 (12) ◽  
pp. 1500199 ◽  
Author(s):  
Takayoshi Katase ◽  
Hidefumi Takahashi ◽  
Tetsuya Tohei ◽  
Yuki Suzuki ◽  
Michihiko Yamanouchi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Solid Phase ◽  
Type Semiconductor ◽  
A Site ◽  
P Type

Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 6970-6973 ◽  
Author(s):  
Masahisa Okada ◽  
Akiyoshi Muto ◽  
Isao Suzumura ◽  
Hiroya Ikeda ◽  
Shigeaki Zaima ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth

Investigations of an Antimony Doped Poly-Silicon Gate Structure for P-Type JFET Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
Anders SÖDERBÄrg ◽  
Ö. Grelsson ◽  
U. Magnusson
Keyword(s):  
Amorphous Silicon ◽  
Experimental Evaluation ◽  
Solid Phase ◽  
Silicon Layer ◽  
Fabrication Process ◽  
Subthreshold Swing ◽  
Solid Phase Epitaxy ◽  
Polysilicon Gate ◽  
Gate Structure ◽  
P Type

AbstractA polysilicon gate structure for application as gate material in p-channel JFET's is presented. The structure was manufactured using solid-phase epitaxy of an evaporated antimony/amorphous—silicon layer. The fabrication process together with experimental evaluation of both diode and JFET characteristics is given. The structure shows near ideal n+p-junction behaviour and the fabricated JFET's are normally off with good values of subthreshold swing and transconductance.

Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS

2002 ◽  
Vol 81 (4) ◽  
pp. 598-600 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Heteroepitaxial Growth ◽  
Type Semiconductor ◽  
Wide Gap ◽  
P Type
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