Effects of the Grain Size on the Electrical Properties of Boron-Doped Polysilicon Films

1990 ◽  
Vol 182 ◽  
Author(s):  
A. Kobayashi ◽  
S. Baba ◽  
A. Kinbara ◽  
H. Akimori ◽  
M. Kawaji ◽  
...  
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Polycrystalline Silicon ◽  
Temperature Curve ◽  
Acceptor Level ◽  
Boron Doped ◽  
Average Grain Size ◽  
Polysilicon Films ◽  
Polycrystalline Silicon Films ◽  
Boron Acceptor

AbstractThe electrical properties have been investigated on boron-doped polycrystalline silicon films with the average grain size of 50 nm and of 370 nm. It is shown that Hall mobility is strongly dependent on the grain size, and the temperature dependence is changed by hydrogenplasma treatment (HPT).After the treatment in the larger grain film, the mobility of about 40 cm2/V sec is obtained and it shows the boron acceptor level of 0.043 eV, which is almost the same as that of the level in monocrystalline silicon. A kink in the mobility vs temperature curve which is observed in the smaller grain film disappears by HPT.These phenomena will be discussed in relation to the density of the trapping states at the grain boundary of the films.

Polycrystalline Silicon Films for Microelectromechanical Devices

1995 ◽  
Vol 403 ◽  
Author(s):  
H. Kahn ◽  
S. Stemmer ◽  
R. L. Mullen ◽  
M. A. Huff ◽  
A. H. Heuer
Keyword(s):  
Residual Stress ◽  
Polycrystalline Silicon ◽  
Microelectromechanical Systems ◽  
Device Fabrication ◽  
Process Equipment ◽  
Boron Doped ◽  
Microelectromechanical Devices ◽  
Polysilicon Films ◽  
Polycrystalline Silicon Films

AbstractPolycrystalline silicon is the most widely used structural material for surface micromachined microelectromechanical systems (MEMS). There are many advantages to using thick polysilicon films; however, due to process equipment limitations, these devices are typically fabricated from polysilicon films less than 3 μm thick. In this work, microelectromechanical test structures were designed and processed from thick (up to 10 μm) in situ boron-doped polysilicon films. The elastic modulus of these films was about 150 GPa, independent of film thickness. The thermal oxidation of the polysilicon induced a compressive stress into the top surface of the films, which was detected as a residual stress in the polysilicon after the device fabrication was complete.

A Large Grain Polycrystalline Silicon Film for Resistive Bolometers

2003 ◽  
Vol 785 ◽  
Author(s):  
Tae-Sik Kim ◽  
Hee Chul Lee
Keyword(s):  
Polycrystalline Silicon ◽  
Defect Density ◽  
Silicon Film ◽  
Seed Selection ◽  
Ion Channeling ◽  
Noise Characteristics ◽  
Sensing Material ◽  
Average Grain Size ◽  
Polysilicon Films ◽  
Polycrystalline Silicon Films

ABSTRACTLarge grain polycrystalline silicon films as a sensing material for infrared bolometers have been proposed and investigated. Using a seed selection through ion channeling technique, we have successfully increased the average grain size of polysilicon films up to 1670Å. The achieved TCR value at 20°C and grain boundary defect density of the film are found to be as high as -2.46%/K for a resistivity of 30Ωcm and to be about 1.752×1012/cm2, respectively. From the measurement of noise characteristics of the film, the value of k, 1/f noise parameter, is calculated to be 1.35×10-9. As a result, the estimated detectivity is found to be 5.6×108cmHz1/2/W.

Deposition and Characterization of In-Situ Boron Doped Polycrystalline Silicon Films for Microelectromechanical Systems Applications

1999 ◽  
Vol 605 ◽  
Author(s):  
J. J. McMahon ◽  
J. J. McMahon ◽  
J. M. Melzak ◽  
C. A. Zorman ◽  
J. Chung ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Microelectromechanical Systems ◽  
Single Step ◽  
Boron Doped ◽  
Polysilicon Films ◽  
Polycrystalline Silicon Films ◽  
P Type ◽  
Deposition Conditions

AbstractIn an effort to develop thick, p-type polycrystalline silicon (polysilicon) films for microelectromechanical systems (MEMS) applications, in-situ boron-doped polysilicon films were deposited by a single-step APCVD process at susceptor temperatures ranging from 700°C to 955°C. The process produces boron-doped films at a deposition rate of 73 nm/min at 955°C. Spreading resistance measurements show that the boron doping level is constant at 2 × 1019 /cm3 throughout the thickness of the films. Doped films deposited at the low temperatures exhibit compressive stress as high as 666 Mpa; however films deposited at 955°C exhibited stress as low as 130 MPa. TEM and XRD show that the microstructure strongly depends on the deposition conditions. Surface micromachined, singly clamped cantilevers and strain gauges were successfully fabricated and used to characterize the residual stress of 5.0 µm-thick doped films deposited at a susceptor temperature of 955°C.

Electron microscopy of transient annealed polysilicon films

1986 ◽  
Vol 44 ◽  
pp. 738-739
Author(s):  
S.J. Krause ◽  
S.R. Wilson ◽  
R.B. Gregory ◽  
W.M. Paulson
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Electrical Properties ◽  
Integrated Circuits ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Structural Changes ◽  
Post Annealing ◽  
Polysilicon Films ◽  
Ion Implanted

Polycrystalline silicon, commonly used as an interconnect and as a gate material in many integrated circuits, is ion implanted and annealed to reduce its resistivity. We previously characterized the effects of transient annealing on the structure and electrical properties of ion implanted polycrystalline silicon and found that grain growth occurred by an interfacial energy controlled mechanism which resulted in increased grain size and reduced resistivity. In this work we are reporting on structural changes in films subjected to a treatment of transient preannealing, ion implantation, and transient post-annealing.

Effect of WO3 Doping on Microstructural and Electrical Properties of ZnO-Pr6O11 Based Varistor Materials

2013 ◽  
Vol 591 ◽  
pp. 54-60
Author(s):  
Xiu Li Fu ◽  
Yan Xu Zang ◽  
Zhi Jian Peng
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Grain Growth ◽  
Doping Level ◽  
Nonlinear Coefficient ◽  
Current Voltage ◽  
Average Grain Size ◽  
Current Voltage Characteristics ◽  
Voltage Performance

The effect of WO3doping on microstructural and electrical properties of ZnO-Pr6O11based varistor materials was investigated. The doped WO3plays a role of inhibitor in ZnO grain growth, resulting in decreased average grain size from 2.68 to 1.68 μm with increasing doping level of WO3from 0 to 0.5 mol%. When the doping level of WO3was lower than 0.05 mol%, the nonlinear current-voltage characteristics of the obtained varistors could be improved significantly with increasing amount of WO3doped. But when the doping level of WO3became higher, their nonlinear current-voltage performance would be dramatically deteriorated when more WO3was doped. The optimum nonlinear coefficient, varistor voltage, and leakage current of the samples were about 13.71, 710 V/mm and 13 μA/cm2, respectively, when the doping level of WO3was in the range from 0.03 to 0.05 mol%.

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