Selective Oxidation and Etching of Reacted Pt Films on Gaas

1990 ◽  
Vol 181 ◽  
Author(s):  
Eliezer Weiss ◽  
Robert C. Keller ◽  
Margaret L. Kniffin ◽  
C.R. Helms
Keyword(s):  
Water Vapor ◽  
Auger Electron Spectroscopy ◽  
Selective Oxidation ◽  
Electron Spectroscopy ◽  
Gaas Substrate ◽  
Gallium Oxide ◽  
Auger Electron ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Pt Films

ABSTRACTThe oxidation of prereacted Pt films on (100)-oriented n-GaAs substrates was studied in the temperature range between 550 and 750°C using Auger electron spectroscopy and Xe+ ion profiling. The GaPt/PtAs2/GaAs structure formed during annealing in hydrogen was oxidized using a mixture of water vapor and hydrogen. The GaPt phase can be oxidized completely, whereas the inner PtAs2 and GaAs interfaces are left unoxidized. The oxidation of the platinum-gallium phase is self limited by the diffusion of the Ga through the gallium oxide overlayer. The oxide can be etched off to leave a structure consisting only of platinum-arsenide on the GaAs substrate.

Auger electron spectroscopy study of pulsed-laser evaporated CdTe films on (100) GaAs

1987 ◽  
Vol 65 (8) ◽  
pp. 972-974 ◽  
Author(s):  
J. J. Dubowski ◽  
D. F. Mitchell ◽  
G. I. Sproule
Keyword(s):  
Chemical Composition ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Gaas Substrate ◽  
Auger Electron ◽  
Pulsed Laser ◽  
Growth Surface ◽  
Spectroscopy Study ◽  
Gaas Substrates ◽  
Cdte Films

Pulsed-laser evaporated CdTe films deposited on (100) GaAs substrates have been studied by Auger electron spectroscopy (AES). The depth dependence of chemical composition has been determined from sputtering profiles. The films had a constant chemical composition within the accuracy of AES. Thermal treatment of GaAs substrate at temperatures as low as 260 °C was found to be sufficient for obtaining and O- and C-free post-growth surface of GaAs. The width of the interfacial CdTe–GaAs region was ≤ 3 nm, and the interface was Te-rich. A possibility of forming the As2Te3 layer at the CdTe–GaAs interface has been demonstrated.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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