Auger Electron Spectroscopy Study of GaAs Substrate Cleaning Procedures

1982 ◽  
Vol 129 (2) ◽  
pp. 406-408 ◽  
Author(s):  
J. L. Zilko ◽  
R. S. Williams
1987 ◽  
Vol 65 (8) ◽  
pp. 972-974 ◽  
Author(s):  
J. J. Dubowski ◽  
D. F. Mitchell ◽  
G. I. Sproule

Pulsed-laser evaporated CdTe films deposited on (100) GaAs substrates have been studied by Auger electron spectroscopy (AES). The depth dependence of chemical composition has been determined from sputtering profiles. The films had a constant chemical composition within the accuracy of AES. Thermal treatment of GaAs substrate at temperatures as low as 260 °C was found to be sufficient for obtaining and O- and C-free post-growth surface of GaAs. The width of the interfacial CdTe–GaAs region was ≤ 3 nm, and the interface was Te-rich. A possibility of forming the As2Te3 layer at the CdTe–GaAs interface has been demonstrated.


1989 ◽  
Vol 23 (11) ◽  
pp. 1969-1973 ◽  
Author(s):  
I. Baker ◽  
R.A. Padgett ◽  
E.M. Schulson

2006 ◽  
Vol 83 (1) ◽  
pp. 12-16 ◽  
Author(s):  
J.H. Xia ◽  
Rusli ◽  
S.F. Choy ◽  
R. Gopalakrishan ◽  
C.C. Tin ◽  
...  

1986 ◽  
Vol 168 (1-3) ◽  
pp. 681-687 ◽  
Author(s):  
C. Fontaine ◽  
J.L. Castano ◽  
J. Castagné ◽  
A. Munoz-Yague

1980 ◽  
Vol 127 (12) ◽  
pp. 2738-2742 ◽  
Author(s):  
Gopala N. Krishnan ◽  
Bernard J. Wood ◽  
Daniel Cubicciotti

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