Improved surface treatments for recycled (100) GaAs substrates in view of molecular-beam epitaxy growth: Auger electron spectroscopy, Raman, and secondary ion mass spectrometry analyses

2002 ◽  
Vol 20 (6) ◽  
pp. 2214 ◽  
Author(s):  
Fabienne Négri ◽  
Eléna Bedel-Pereira
Keyword(s):  
Mass Spectrometry ◽  
Molecular Beam Epitaxy ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Molecular Beam Epitaxy Growth ◽  
Gaas Substrates ◽  
Secondary Ion

SIMS STUDIES OF Cl-DOPED ZnSe EPILAYERS GROWN BY MBE

2006 ◽  
Vol 13 (02n03) ◽  
pp. 215-220
Author(s):  
F. S. GARD ◽  
J. D. RILEY ◽  
K. PRINCE
Keyword(s):  
Mass Spectrometry ◽  
Detection Limit ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Standard Sample ◽  
Host Matrix ◽  
Gaas Substrates ◽  
Sims Analysis ◽  
Secondary Ion

Chlorine is one of the most used species to produce n-type ZnSe epilayers. In this paper, we present Secondary Ion Mass Spectrometry (SIMS) profiles of a series of Cl -doped ZnSe samples, which were grown by Molecular Beam Epitaxy (MBE) technique on GaAs substrates. These profiles have been used to examine the limitation of SIMS analysis of narrow Cl -delta layers. In order to convert SIMS raw data to quantified data, the depth profile from a Cl -implanted standard sample has been used to estimate the "useful ion yield" of chlorine and thus the instrumental sensitivity for chlorine in a ZnSe matrix. The "useful ion yield" and detection limit of chlorine in the ZnSe host matrix were calculated to be 4.7 × 10-7 and 5 × 1017 atoms/cm3, respectively.

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