Influence of Nitrogen Impurities on Nickel and Platinum Silicide Formation

1982 ◽  
Vol 18 ◽  
Author(s):  
K. T. Ho ◽  
M.-A. Nicolet ◽  
L. WieluŃSki
Keyword(s):  
Stable Isotope ◽  
Nuclear Reaction ◽  
Silicon Substrate ◽  
Metal Films ◽  
Silicon Substrates ◽  
Chemical Affinity ◽  
Silicide Formation ◽  
Platinum Silicide ◽  
Model Based ◽  
Thin Nickel

In the present study we investigate the influence of nitrogen on the silicide formation of thin nickel and platinum films. Nitrogen is introduced by implantation either in the metal films or in the silicon substrates. We use the rare stable isotope 15N for the implantation and the nuclear reaction 15N(p,α)12C for the detection and profiling of the impurity. For nitrogen in nickel, we find that at 350 °C nitrogen is mobile. It accumulates at the bottom nickel interface and, for a dose exceeding about 0.5 × 1016 N atoms cm−2, forms a barrier to silicide formation. When nitrogen is initially in the silicon substrate, the nitrogen profile is broadened in the same proportion as the dilution of the silicon sublattice when forming the silicide. Similar experiments with platinum films showed partially different behaviors. All results are explained in terms of a model based on the moving species during the silicide formation and the chemical affinity of nitrogen to the metal and to silicon.

Effect of Nitrogen and Oxygen Impurities on Tantalum Silicide Formation

1983 ◽  
Vol 25 ◽  
Author(s):  
K. T. Ho ◽  
C.-D. Lien ◽  
M-A. Nicolet ◽  
D. M. Scott
Keyword(s):  
Nuclear Reaction ◽  
Host Lattice ◽  
Chemical Affinity ◽  
Silicide Formation ◽  
Silicide Layer ◽  
Physical Effects ◽  
Rare Isotopes ◽  
Silicon System ◽  
Tantalum Silicide ◽  
Oxygen Impurities

ABSTRACTTantalum, being a refractory metal, is sensitive to ambient impurities when forming a silicide. By introducing nitrogen and oxygen impurities into a tantalum-silicon system, interesting chemical and physical effects are observed in their subsequent reactions. Nitrogen and oxygen behave similarly in such a system. If initially present in Ta, they segregate into the still unreacted Ta as the silicide layer grows at a somewhat retarded rate. The same impurities, initially present in Si, are immobile in the form of stable compouis and suppress TaSi2 growth. The rare isotopes 15N and 18O are introduced bY implantation and Profiled by 15N(P,α)12C and 18O(P,α)15N nuclear reaction analyses, respectively. In addition, unintentionally incorporated 18O is checked by the 16O(d,α) 14N nuclear reaction. The results are explained in terms of the moving species Si, and of the chemical affinity, solubility and diffusivity of the impurities in their host lattice.

Redistribution and Influence of Arsenic in Chromium Silicide Formation

1984 ◽  
Vol 37 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Reaction Rate ◽  
Physical State ◽  
Metal Films ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Ion Channeling ◽  
Retarding Effect ◽  
Chromium Silicide ◽  
Dopant Atoms

AbstractThe redistribution of arsenic during CrSi2 formation and its influence on the growth rate of the silicide have been investigated with Rutherford backscattering and ion channeling spectroscopy and electron microscopy. Arsenic was introduced by implantation in the metal films or in the silicon substrates. When arsenic was initially in chromium, it was incorporated in CrSi2 during silicide formation and significantly reduced the reaction rate; when arsenic was initially in silicon, it accumulated at the silicon/silicide interface with a less pronounced retarding effect than that if arsenic was present in chromium. The redistribution of dopant atoms is attributed to the fact that silicon is the dominant moving species in CrSi2 formation. The influence of dopant atoms is related to their chemical and physical state.

scholarly journals Binary Self-Assembly of Nanocolloidal Arrays using Concurrent and Sequential Spin Coating Techniques

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 274
Author(s):  
Shih-Jyun Shen ◽  
Demei Lee ◽  
Yu-Chen Wu ◽  
Shih-Jung Liu
Keyword(s):  
Silicon Substrate ◽  
Self Assembly ◽  
Spin Coating ◽  
Processing Parameters ◽  
The Self ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Polystyrene Spheres ◽  
Optimal Processing ◽  
Spin Coater

This paper reports the binary colloid assembly of nanospheres using spin coating techniques. Polystyrene spheres with sizes of 900 and 100 nm were assembled on top of silicon substrates utilizing a spin coater. Two different spin coating processes, namely concurrent and sequential coatings, were employed. For the concurrent spin coating, 900 and 100 nm colloidal nanospheres of latex were first mixed and then simultaneously spin coated onto the silicon substrate. On the other hand, the sequential coating process first created a monolayer of a 900 nm nanosphere array on the silicon substrate, followed by the spin coating of another layer of a 100 nm colloidal array on top of the 900 nm array. The influence of the processing parameters, including the type of surfactant, spin speed, and spin time, on the self-assembly of the binary colloidal array were explored. The empirical outcomes show that by employing the optimal processing conditions, binary colloidal arrays can be achieved by both the concurrent and sequential spin coating processes.

Fabrication and characteristics of the high-sensitivity humidity sensor of anodic aluminum oxide based on silicon substrates

2018 ◽  
Vol 32 (16) ◽  
pp. 1850199 ◽  
Author(s):  
Degao Lan ◽  
Xiaofeng Zhao ◽  
Fei Wang ◽  
Chunpeng Ai ◽  
Dianzhong Wen ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Silicon Substrate ◽  
Anodic Aluminum Oxide ◽  
Nonlinear Response ◽  
Humidity Sensor ◽  
High Sensitivity ◽  
Silicon Substrates ◽  
High Porosity ◽  
Interdigitated Electrodes ◽  
Anodic Aluminum

The humidity sensor based on silicon substrate is presented in this paper, which consists of anodic aluminum oxide (AAO) film and interdigitated electrodes. By using electro-chemical oxidizing technique, AAO film with high porosity is fabricated on the silicon substrate. Under optimal oxidization condition, pore diameter of 37–79 nm and depth about [Formula: see text]m is achieved. Interdigitated electrodes are fabricated on the top of AAO film by vacuum evaporation deposition method. The results show that the sensor has different nonlinear response in whole range of relative humidity (RH). Moreover, it has almost linear relationship between the capacitance and RH at high RH from 75% to 95%. The highest sensitivity is obtained 613 pF/%RH at 1 kHz, which is much higher than other frequencies.

Influences of MOS Device Characteristic under Different Oxygen-Dose Participations in the Silicon Substrate

2015 ◽  
Vol 656-657 ◽  
pp. 8-13
Author(s):  
Shen Li Chen ◽  
Tsung Shiung Lee ◽  
Yu Ting Huang
Keyword(s):  
Silicon Substrate ◽  
Czochralski Method ◽  
Silicon Substrates ◽  
Trap Charge ◽  
Substrate Quality ◽  
Mos Devices ◽  
Starting Point ◽  
Charge Characteristic ◽  
Mos Device

A silicon substrate is the starting point of producing the semiconductor component, so that the quality of semiconductor substrate is very important during the VLSI fabrication. In this paper, we will evaluate the influence of MOS device characteristics under different oxygen impurities in silicon substrates. In the course of silicon substrate pulling process by Czochralski method, the defect and impurity will be existed; the oxygen atom will be induced substrate dislocations and affected the substrate quality. In this work, different oxygen doses will be used in wafer to study the impacts on MOS CV curve characteristic, interface trap charge characteristic, ID-VDScurve, ID-VGScurve, and threshold voltage behaviors of MOS devices.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
R. Schwarz ◽  
A. Dittrich ◽  
S. M. Zhou ◽  
M. Hundhausen ◽  
L. Ley ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Spectral Ellipsometry ◽  
Step Process ◽  
Depth Profiles ◽  
Ellipsometric Angle ◽  
Kinetics Of

ABSTRACTSuicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

Supercritical fluid immersion deposition: a new process for selective deposition of metal films on silicon substrates

2005 ◽  
Vol 190 (1) ◽  
pp. 25-31 ◽  
Author(s):  
Xiang R. Ye ◽  
Chien M. Wai ◽  
Yuehe Lin ◽  
James S. Young ◽  
Mark H. Engelhard
Keyword(s):  
Supercritical Fluid ◽  
Metal Films ◽  
Silicon Substrates ◽  
Selective Deposition ◽  
New Process
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