Redistribution and Influence of Arsenic in Chromium Silicide Formation

1984 ◽  
Vol 37 ◽  
Author(s):  
L. R. Zheng ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Reaction Rate ◽  
Physical State ◽  
Metal Films ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Ion Channeling ◽  
Retarding Effect ◽  
Chromium Silicide ◽  
Dopant Atoms

AbstractThe redistribution of arsenic during CrSi2 formation and its influence on the growth rate of the silicide have been investigated with Rutherford backscattering and ion channeling spectroscopy and electron microscopy. Arsenic was introduced by implantation in the metal films or in the silicon substrates. When arsenic was initially in chromium, it was incorporated in CrSi2 during silicide formation and significantly reduced the reaction rate; when arsenic was initially in silicon, it accumulated at the silicon/silicide interface with a less pronounced retarding effect than that if arsenic was present in chromium. The redistribution of dopant atoms is attributed to the fact that silicon is the dominant moving species in CrSi2 formation. The influence of dopant atoms is related to their chemical and physical state.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

scholarly journals Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

2002 ◽  
Vol 34 (3) ◽  
pp. 231-240 ◽  
Author(s):  
M. Vlasova ◽  
M. Kakazey ◽  
J.G. Gonzales-Rodriguez ◽  
G. Dominguez ◽  
Momcilo Ristic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
High Pressure ◽  
High Temperature ◽  
Ir Spectroscopy ◽  
Phase Analysis ◽  
Temperature Treatment ◽  
Silicide Formation ◽  
X Ray ◽  
Chromium Silicide

The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa) is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

Atomic Motion of Dopant During Interfacial Silicide Formation

1982 ◽  
Vol 18 ◽  
Author(s):  
M. Wittmer ◽  
C.-Y. Ting ◽  
K. N. Tu
Keyword(s):  
Noble Metal ◽  
Silicide Formation ◽  
Electrical Measurements ◽  
Ion Channeling ◽  
Metal Silicides ◽  
Junction Device ◽  
Dopant Atoms ◽  
Dopant Redistribution ◽  
Silicon Interface ◽  
Kinetics Of

The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides.

Influence of Nitrogen Impurities on Nickel and Platinum Silicide Formation

1982 ◽  
Vol 18 ◽  
Author(s):  
K. T. Ho ◽  
M.-A. Nicolet ◽  
L. WieluŃSki
Keyword(s):  
Stable Isotope ◽  
Nuclear Reaction ◽  
Silicon Substrate ◽  
Metal Films ◽  
Silicon Substrates ◽  
Chemical Affinity ◽  
Silicide Formation ◽  
Platinum Silicide ◽  
Model Based ◽  
Thin Nickel

In the present study we investigate the influence of nitrogen on the silicide formation of thin nickel and platinum films. Nitrogen is introduced by implantation either in the metal films or in the silicon substrates. We use the rare stable isotope 15N for the implantation and the nuclear reaction 15N(p,α)12C for the detection and profiling of the impurity. For nitrogen in nickel, we find that at 350 °C nitrogen is mobile. It accumulates at the bottom nickel interface and, for a dose exceeding about 0.5 × 1016 N atoms cm−2, forms a barrier to silicide formation. When nitrogen is initially in the silicon substrate, the nitrogen profile is broadened in the same proportion as the dilution of the silicon sublattice when forming the silicide. Similar experiments with platinum films showed partially different behaviors. All results are explained in terms of a model based on the moving species during the silicide formation and the chemical affinity of nitrogen to the metal and to silicon.

scholarly journals The Examination of Calcium ion Implanted Alumina with Energy Filtered Transmission Electron Microscopy

1997 ◽  
Vol 3 (S2) ◽  
pp. 413-414
Author(s):  
E.M. Hunt ◽  
J.M. Hampikian ◽  
N.D. Evans
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pure Aluminum ◽  
Lattice Parameter ◽  
Face Centered Cubic ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Knoop Microhardness ◽  
Aluminum Nanocrystals ◽  
Face Centered

Ion implantation can be used to alter the optical response of insulators through the formation of embedded nano-sized particles. Single crystal alumina has been implanted at ambient temperature with 50 keV Ca+ to a fluence of 5 x 1016 ions/cm2. Ion channeling, Knoop microhardness measurements, and transmission electron microscopy (TEM) indicate that the alumina surface layer was amorphized by the implant. TEM also revealed nano-sized crystals ≈7 - 8 nm in diameter as seen in Figure 1. These nanocrystals are randomly oriented, and exhibit a face-centered cubic structure (FCC) with a lattice parameter of 0.409 nm ± 0.002 nm. The similarity between this crystallography and that of pure aluminum (which is FCC with a lattice parameter of 0.404 nm) suggests that they are metallic aluminum nanocrystals with a slightly dilated lattice parameter, possibly due to the incorporation of a small amount of calcium.Energy-filtered transmission electron microscopy (EFTEM) provides an avenue by which to confirm the metallic nature of the aluminum involved in the nanocrystals.

Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
R. Schwarz ◽  
A. Dittrich ◽  
S. M. Zhou ◽  
M. Hundhausen ◽  
L. Ley ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Spectral Ellipsometry ◽  
Step Process ◽  
Depth Profiles ◽  
Ellipsometric Angle ◽  
Kinetics Of

ABSTRACTSuicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

Chromium silicide formation with multiple electron beam pulses

1986 ◽  
Vol 140 (1) ◽  
pp. 163-166 ◽  
Author(s):  
E. D'Anna ◽  
G. Leggieri ◽  
A. Luches ◽  
G. Majni
Keyword(s):  
Electron Beam ◽  
Silicide Formation ◽  
Chromium Silicide

Synthesis Route towards Fine and Monodisperse Ni Nanoparticles via Hot-Injection Approach

2013 ◽  
Vol 393 ◽  
pp. 146-151 ◽  
Author(s):  
N.R. Nik Roselina ◽  
Aziz Azizan ◽  
Koay Mei Hyie ◽  
C.M. Mardziah ◽  
Salmiah Kasolang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Size Distribution ◽  
Reaction Rate ◽  
Fine Particles ◽  
Synthesis Temperature ◽  
Ni Nanoparticles ◽  
One Pot ◽  
Transmission Electron ◽  
Hot Injection

Manipulation of adding sequences have been found to influence the reaction rate, thus made it easier to produced controllable Ni nanoparticles. Hot-injection approach shown capability to significantly reduce the production time of Ni nanoparticles compared to the conventional one-pot synthesis. With minor modification on conventional polyol method, narrow, monodispersed and highly yield spherical nickel (Ni) nanoparticles were successfully produced at synthesis temperature of 60°C. Three mixing methods were investigated to study its efficiency towards producing rapid and narrower size distribution of Ni nanoparticles. Reduction processes were proposed each of the method. As-synthesized Ni nanoparticles were characterized with Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM) and Fourier transform infrared spectroscopy (FTIR) to analyze the size, morphology and interaction of reactants. Fine particles size distribution revealed that when hydrazine was first heated, reaction rate improved tremendously.

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