Ar+ Induced Interfacial Mixinc in the Pd/Cu Bilayer System

1989 ◽  
Vol 157 ◽  
Author(s):  
H.K. Kim ◽  
J.H. Song ◽  
S.K. Kim ◽  
K. Jeong ◽  
C.N. Whang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Layer By Layer ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Bilayer System ◽  
Radiation Enhanced Diffusion

ABSTRACTIon beam mixing of a Pd/Cu bilayer is studied using irradiation with 80 keV Ar+ ions at room temperature. RBS analysis shows that intermixing has occurred across the Pd/Cu interface, and that the mixing amount increases with increasing ion dose, which agrees well with a model for radiation enhanced diffusion. It is found that the Cu3Pd phase grows in a layer-by-layer manner.

Bombardment-Induced Mixing of Mo Films on Si

1985 ◽  
Vol 54 ◽  
Author(s):  
AH. Van Ommen ◽  
M.F.C. Willemsen ◽  
PR. Boudewijn ◽  
A. H. Reader
Keyword(s):  
Elevated Temperature ◽  
Layer Thickness ◽  
Mixed Layer ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Dominant Mechanism ◽  
Enhanced Diffusion ◽  
Implantation Temperature ◽  
Radiation Enhanced Diffusion

ABSTRACTWe studied ion beam mixing of thin Mo films on monocrystalline Si by As “implantation at room temperature. The results differ significantly from those obtained for implantation at elevated temperature (T > 200°C). where ion beam mixing results in hexagonal MoSi2 formation. Room temperature implantation results in the formation of an amorphous mixed layer. The composition of this layer varies with depth from Mo-rich to Si-rich. The mixed layer thickness increases linearly with implanted dose and energy. An increase of the implantation temperature with 100°C gives rise to a factor of 2 larger mixed layer thickness and to the formation of amorphous MoSi2 near the interface with Si. These phenomena indicate that at elevated temperature ion beam mixing is controlled by radiation-enhanced diffusion whereas, at room temperature ballistic mixing is the dominant mechanism.

Ion beam mixing, diffusion, and phase stability in Cu/Al2O3 interfaces

1996 ◽  
Vol 11 (5) ◽  
pp. 1277-1283 ◽  
Author(s):  
K. Neubeck ◽  
H. Hahn ◽  
A. G. Balogh ◽  
H. Baumann ◽  
K. Bethge ◽  
...  
Keyword(s):  
Phase Stability ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Temperature Diffusion ◽  
Sputtering Yields ◽  
Concentration Depth Profiles ◽  
Diffusion Properties

Ion beam mixing, diffusion properties, and phase stability have been investigated in Cu/Al2O3 bilayer samples. Specimens were prepared by vapor deposition and irradiated with 150 keV Ar+ ions up to a fluence of 1.5 · 1017 Ar+/cm2. Sample temperature under irradiation was varied between 77 K and 673 K. The mixing behavior was studied by analyzing the concentration depth profiles, determined by Rutherford Backscattering Spectroscopy. It was found that mixing efficiencies of Cu, Al, and O scale with Ar+ fluence. Radiation enhanced diffusion (RED), observed above room temperature, is separated from ballistic mixing and high temperature diffusion. The migration enthalpy for interdiffusion in the RED region (between RT and 300 °C) was estimated to be approximately 0.3 eV. Sputtering yields depending on temperature gradient near to sample and phase stability versus ion dose and temperature are also discussed.

scholarly journals Ion-Beam Mixing in Amorphous and Crystalline Fe-Ti

1988 ◽  
Vol 128 ◽  
Author(s):  
Udo Scheuer ◽  
Lynn E. Rehn ◽  
Pete Baldo
Keyword(s):  
Amorphous Materials ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Rutherford Back Scattering ◽  
Enhanced Diffusion ◽  
Voltage Electron ◽  
Radiation Enhanced Diffusion ◽  
Bcc Phase ◽  
Ti Films

ABSTRACTCrystalline Fe and Fe-10at.%Ti and amorphous Fe-37at.%Ti films with Ag and Hf markers were produced by vapor deposition. Marker spreading during ion-beam mixing between 77 K and 580 K was measured using Rutherford Back-scattering (RBS). Marker spreading was also measured between temperatures of 300 K to 700 K after full crystallization of the Fe-37at.%Ti films. Microstructural changes during ion-beam mixing were studied in situ, in a High-Voltage Electron Microscope. Homogeneous nucleation of a metastable bcc phase, was observed at high temperatures. The results are discussed in terms of their relevance to “radiation-enhanced” diffusion in amorphous materials.

Solid-state amorphization, interdiffusion, and ion-beam mixing in Au/Zr and Ni/Zr

1989 ◽  
Vol 4 (6) ◽  
pp. 1444-1449 ◽  
Author(s):  
Fu-Rong Ding ◽  
P. R. Okamoto ◽  
L. E. Rehn
Keyword(s):  
Solid State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Bilayer Films ◽  
Voltage Electron ◽  
Radiation Enhanced Diffusion

Inert-gas markers, Rutherford backscattering, and x-ray diffraction were used to investigate solid-state interdiffusion in Ni/Zr and Au/Zr bilayer films as a function of temperature; microstructural studies during annealing were performed in situ, in a high-voltage electron microscope. Au, in contrast to Ni, is not an anomalously fast diffuser in crystalline Zr. Nevertheless, an amorphous product phase was found in both alloy systems for reaction temperatures  550 K; heterogeneous nucleation of the amorphous phase was observed in Au/Zr. The interdiffusion data reveal two distinct Arrhenius regimes, 330–∼470 K and ∼480–550 K, with quite different apparent activation enthalpies. These thermal interdiffusion results are compared with temperature dependent studies of ion-beam mixing in similar bilayer specimens. This comparison indicates that the enhanced efficiencies observed for ion-beam mixing above ∼480 K result from the as-prepared metastable microstructurc, and are not due to radiation-enhanced diffusion.

Amorphization of Zr/Ni Bilayers by Ion-Beam-Mixing

1993 ◽  
Vol 311 ◽  
Author(s):  
Jacek Jagelski ◽  
L. Thome ◽  
M. Kopcewicz
Keyword(s):  
Amorphous Phase ◽  
Room Temperature ◽  
Ion Beam ◽  
Irradiation Temperature ◽  
Ion Beam Mixing ◽  
Bilayer System ◽  
Incident Atom

ABSTRACTThe amorphization process induced by ion-beam-imxing was studied for the Zr/Ni bilayer system by means of the RBS/channelling and CEMS techniques. The number of atoms mixed per one incident atom was found to be the same for σ100 K and 300 K irradiations, whereas it was increased by the factor of 2.5 for 500 K irradiation what indicates, that the change in the mixing mechanism occurred above room temperature. The results show that amorphization of the Zr/Ni system is controlled by the number of mixed atoms and depends on the irradiation temperature. A change in CEMS spectra was observed at σ770 K what suggests that recrystallization of the amorphous phase occurs at this temperature.

High Energy Ion Beam Mixing in Al2 O3

1983 ◽  
Vol 27 ◽  
Author(s):  
M. B. Lewis ◽  
C. J. Mchargue
Keyword(s):  
Elevated Temperatures ◽  
Ion Beam ◽  
High Energy ◽  
Binary Collision ◽  
Surface Layers ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Metal Atoms ◽  
Radiation Enhanced Diffusion

ABSTRACTThe ion beam mixing technique has been employed to mix metal atoms into the surface layers of Al2O3. Ion beams of Fe+ and Zr+ in the 1 to 4 MeV energy range were used to irradiate Al2O3 specimens on the surfaces of which films of chromium or zirconium had been evaporated. Some specimens were irradiated at elevated temperatures of 873 or 1173 K. Rutherford backscattering (RBS) and channeling methods were used to measure the metal atom depth profiles near the surface. Analyses of the backscattering data included binary collision calculations using the codes TRIM and MARLOWE. The significance and limitations of high energy (>1 MeV) beams for ion beam mixing experiments is discussed. Evidence was found for radiation enhanced diffusion and/or solubility of zirconium and chromium in Al2O3 at 873 K.

Ion beam mixing and radiation enhanced diffusion in metal/ceramic interfaces

1996 ◽  
pp. 589-596
Author(s):  
K. Neubeck ◽  
C.-E. Lefaucheur ◽  
H. Hahn ◽  
A.G. Balogh ◽  
H. Baumann ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Metal Ceramic ◽  
Ceramic Interfaces

Ion Beam Mixing In Binary Amorphous Metallic Alloys

1985 ◽  
Vol 51 ◽  
Author(s):  
Horst Hahn ◽  
R. S. Averback ◽  
T. Diaz De La Rubia ◽  
P. R. Okamoto
Keyword(s):  
Low Temperatures ◽  
Glass Phase ◽  
Ion Beam ◽  
Metallic Alloys ◽  
Strong Temperature Dependence ◽  
Ion Beam Mixing ◽  
Amorphous Metallic Alloys ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Diffusion Mechanisms

ABSTRACTIon beam mixing (IM) was measured in homogeneous amorphous metallic alloys of Cu-Er and Ni-Ti as a function of temperature using tracer impurities, i.e., the so called “marker geometry”. In Cu-Er, a strong temperature dependence in IM was observed between 80 K and 373 K, indicating that radiation-enhanced diffusion mechanisms are operative in this metallic glass. Phase separation of the Cu-Er alloy was also observed under irradiation as Er segregated to the vacuum and SiO2 interfaces of the specimen. At low-temperatures, the amount of mixing in amorphous Ni-Ti is similar to that in pure Ni or Ti, but it is much greater in Cu-Er than in either Cu or Er.

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