Dislocation Related D-Band Luminescence; the Effects of Transition Metal Contamination

1989 ◽  
Vol 163 ◽  
Author(s):  
Victor Higgs ◽  
E.C. Lightowlers ◽  
P. Kightley
Keyword(s):  
Transition Metal ◽  
Point Defect ◽  
Metal Contamination ◽  
Spectral Features ◽  
Tem Analysis ◽  
Strain Fields ◽  
Defect Complexes ◽  
Metal Atoms ◽  
Dislocation Densities ◽  
Before And After

AbstractPhotoluminescence measurements have been made on plastically formed silicon, free from metal contamination, with dislocation densities in the range 104-108cm-2. Only after deliberate contamination with Cu, Fe or Ni were the dislocation related D-bands the dominant spectral features observed. TEM analysis has revealed that there are no differences in the dislocation structures before and after contamination and that there is no evidence for precipitation on the dislocations or in their strain fields. The D-band features may, therefore, be due to impurities (metal atoms or point defect complexes) trapped in the strain fields of the dislocations.

Quantitative Study of Metal Gettering in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
Etienne G. Colas ◽  
E. R. Weber ◽  
S. Hahn
Keyword(s):  
High Temperature ◽  
Transition Metal ◽  
Quantitative Study ◽  
Quantitative Approach ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Before And After ◽  
Oxygen Precipitates

ABSTRACTIntrinsic gettering of iron in silicon has been investigated with a novel quantitative approach. Concentrations of electrically active, interstitial iron were determined by Electron Pararnagnetic Resonnance before, and after, various annealing cycles, using Cz silicon with oxygen precipitates of different well defined morphologies. Significant differences in the gettering rate in as-grown Cz and Cz silicon with high temperature oxygen precipitates were found. High temperature treatments after metal gettering resulted in the re-emission of the transition metal atoms for both as-grown and high temperature precipitated Cz silicon. This allowed the conclusion that gettering took place via FeSi2 formation in these cases and did not involve any thermally more stable phases.

Tem analysis of multiple-energy arsenic implanted and Rta'd silicon

1987 ◽  
Vol 45 ◽  
pp. 246-247
Author(s):  
R.A. Herring
Keyword(s):  
Device Fabrication ◽  
High Concentration ◽  
Tem Analysis ◽  
Defect Clusters ◽  
High Fluences ◽  
Small Defect ◽  
Before And After ◽  
The Matrix ◽  
The Difference ◽  
Factor Type

Rapid thermal annealing (RTA) of ion-implanted Si is important for device fabrication. The defect structures of 2.5, 4.0, and 6.0 MeV As-implanted silicon irradiated to fluences of 2E14, 4E14, and 6E14, respectively, have been analyzed by electron diffraction both before and after RTA at 1100°C for 10 seconds. At such high fluences and energies the implanted As ions change the Si from crystalline to amorphous. Three distinct amorphous regions emerge due to the three implantation energies used (Fig. 1). The amorphous regions are separated from each other by crystalline Si (marked L1, L2, and L3 in Fig. 1) which contains a high concentration of small defect clusters. The small defect clusters were similar to what had been determined earlier as being amorphous zones since their contrast was principally of the structure-factor type that arises due to the difference in extinction distance between the matrix and damage regions.

Laser Desorption/Ionization of Transition Metal Atoms and Oxides from Solid Argon

2000 ◽  
Vol 104 (35) ◽  
pp. 8173-8177 ◽  
Author(s):  
Lester Andrews ◽  
Andreas Rohrbacher ◽  
Christopher M. Laperle ◽  
Robert E. Continetti
Keyword(s):  
Transition Metal ◽  
Laser Desorption ◽  
Laser Desorption Ionization ◽  
Desorption Ionization ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Solid Argon

Interaction of cyclosporin A molecules with alkali and transition metal atoms on Cu(111)

2021 ◽  
Vol 57 (23) ◽  
pp. 2923-2926
Author(s):  
Yuanyuan Guo ◽  
Li Jiang ◽  
Ari Paavo Seitsonen ◽  
Bodong Zhang ◽  
Joachim Reichert ◽  
...  
Keyword(s):  
Transition Metal ◽  
Cyclosporin A ◽  
Surface Complexation ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Natural Peptide

Discriminatory on-surface complexation by the natural peptide CsA: up to two K atoms within its macrocycle, Co to residue 9 and the macrocycle, Fe non-selectively.

scholarly journals Suppression of Angular Forces in Collisions of Non-S-State Transition Metal Atoms

2005 ◽  
Vol 94 (1) ◽  
Author(s):  
R. V. Krems ◽  
J. Kłos ◽  
M. F. Rode ◽  
M. M. Szczȩśniak ◽  
G. Chałasiński ◽  
...  
Keyword(s):  
Transition Metal ◽  
State Transition ◽  
Metal Atoms ◽  
Transition Metal Atoms
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