Quantitative Study of Metal Gettering in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
Etienne G. Colas ◽  
E. R. Weber ◽  
S. Hahn
Keyword(s):  
High Temperature ◽  
Transition Metal ◽  
Quantitative Study ◽  
Quantitative Approach ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Before And After ◽  
Oxygen Precipitates

ABSTRACTIntrinsic gettering of iron in silicon has been investigated with a novel quantitative approach. Concentrations of electrically active, interstitial iron were determined by Electron Pararnagnetic Resonnance before, and after, various annealing cycles, using Cz silicon with oxygen precipitates of different well defined morphologies. Significant differences in the gettering rate in as-grown Cz and Cz silicon with high temperature oxygen precipitates were found. High temperature treatments after metal gettering resulted in the re-emission of the transition metal atoms for both as-grown and high temperature precipitated Cz silicon. This allowed the conclusion that gettering took place via FeSi2 formation in these cases and did not involve any thermally more stable phases.

New Thermoelectric Arsenides and Antimonides for High Temperature Applications

2007 ◽  
Vol 1044 ◽  
Author(s):  
Hong Xu ◽  
Navid Soheilnia ◽  
Huqin Zhang ◽  
Paola N. Alboni ◽  
Terry M. Tritt ◽  
...  
Keyword(s):  
Electronic Structure ◽  
High Temperature ◽  
Transition Metal ◽  
Band Gap ◽  
Electronic Structure Calculations ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Valence Electrons ◽  
Type Semiconductor ◽  
Structure Calculations

AbstractThree different materials crystallizing in the cubic Ir3Ge7 type are under investigation in our group, namely Mo3(Sb,Te)7, Nb3(Sb,Te)7, and Re3(E,As)7 (with E = Si, Ge, Sn). Our electronic structure calculations reveal a band gap to occur at 55 valence-electrons in all three cases, namely Mo3Sb5Te2, Nb3Sb2Te5, and Re3EAs6. Cubic holes exist in these structures that may be filled with small cations such as 3d transition metal atoms. Ni0.06Mo3Sb5.4Te1.6 is a degenerate p-type semiconductor that reaches ZT = 0.96 at 750°C, while Re3Ge0.6As6.4 is a degenerate n- type semiconductor with slightly lower ZT values. Preliminary results indicate that the Re3(Sn,As)7 system may be the most promising of the rhenium arsenides.

Laser Desorption/Ionization of Transition Metal Atoms and Oxides from Solid Argon

2000 ◽  
Vol 104 (35) ◽  
pp. 8173-8177 ◽  
Author(s):  
Lester Andrews ◽  
Andreas Rohrbacher ◽  
Christopher M. Laperle ◽  
Robert E. Continetti
Keyword(s):  
Transition Metal ◽  
Laser Desorption ◽  
Laser Desorption Ionization ◽  
Desorption Ionization ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Solid Argon

Interaction of cyclosporin A molecules with alkali and transition metal atoms on Cu(111)

2021 ◽  
Vol 57 (23) ◽  
pp. 2923-2926
Author(s):  
Yuanyuan Guo ◽  
Li Jiang ◽  
Ari Paavo Seitsonen ◽  
Bodong Zhang ◽  
Joachim Reichert ◽  
...  
Keyword(s):  
Transition Metal ◽  
Cyclosporin A ◽  
Surface Complexation ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Natural Peptide

Discriminatory on-surface complexation by the natural peptide CsA: up to two K atoms within its macrocycle, Co to residue 9 and the macrocycle, Fe non-selectively.

scholarly journals Suppression of Angular Forces in Collisions of Non-S-State Transition Metal Atoms

2005 ◽  
Vol 94 (1) ◽  
Author(s):  
R. V. Krems ◽  
J. Kłos ◽  
M. F. Rode ◽  
M. M. Szczȩśniak ◽  
G. Chałasiński ◽  
...  
Keyword(s):  
Transition Metal ◽  
State Transition ◽  
Metal Atoms ◽  
Transition Metal Atoms
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