DISLOCATION STUDIES.Atomistic calculations of interaction energies between point defect complexes and dislocations in ionic crystals

1980 ◽  
Vol 41 (C6) ◽  
pp. C6-135-C6-138
Author(s):  
M. P. Puls
Keyword(s):  
Point Defect ◽  
Ionic Crystals ◽  
Interaction Energies ◽  
Defect Complexes

scholarly journals Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3

2019 ◽  
Vol 9 (4) ◽  
Author(s):  
Jared M. Johnson ◽  
Zhen Chen ◽  
Joel B. Varley ◽  
Christine M. Jackson ◽  
Esmat Farzana ◽  
...  
Keyword(s):  
Point Defect ◽  
Band Gap ◽  
Defect Complexes ◽  
Unusual Formation

Formation and annihilation of H-point defect complexes in quenched Si doped with C

2000 ◽  
Vol 88 (8) ◽  
pp. 4525 ◽  
Author(s):  
Naoki Fukata ◽  
Masashi Suezawa
Keyword(s):  
Point Defect ◽  
Defect Complexes ◽  
Si Doped

Point defects

2020 ◽  
pp. 93-104
Author(s):  
Adrian P. Sutton
Keyword(s):  
Free Surface ◽  
Point Defect ◽  
Green's Function ◽  
Point Defects ◽  
Local Environment ◽  
Environment Interaction ◽  
Interaction Energies ◽  
Macroscopic Strain ◽  
Free Surfaces ◽  
Derivatives Of

Examples of intrinsic and extrinsic point defects are discussed. Models of point defects in a continuum as misfitting spheres are solved for rigid and deformablemisfitting spheres. Free surfaces alter significantly the formation volume of a point defect even when the point defect is far from any free surface. Many point defects have non-sperical symmetry, and it is then better to consider defect forces exerted by the point defect on neighbouring atoms. Defect forces capture the symmetry of the point defect in its local environment. Interaction energies between point defects and between point defects and other sources of stress are expressed conveniently and with physical transparency in terms of dipole, quadrupole etc. tensors of point defects and derivatives of the Green’s function. The dipole tensor is experimentally measurable through the lambda-tensor, which measures the derivative of the macroscopic strain of a crystal with concentration of the point defect.

Impurity-assisted annealing of point defect complexes in ion- implanted silicon

1999 ◽  
Vol 273-274 ◽  
pp. 489-492 ◽  
Author(s):  
Paolo Pellegrino ◽  
Andrej Yu Kuznetsov ◽  
Bengt G. Svensson
Keyword(s):  
Point Defect ◽  
Defect Complexes ◽  
Ion Implanted
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