Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers

2000 ◽  
Vol 76 (25) ◽  
pp. 3685-3687 ◽  
Author(s):  
J. Hader ◽  
S. W. Koch ◽  
J. V. Moloney ◽  
E. P. O’Reilly
1998 ◽  
Vol 43-44 ◽  
pp. 669-676 ◽  
Author(s):  
H Gamez-Cuatzin ◽  
A Daami ◽  
L Garchery ◽  
I Sagnes ◽  
Y Campidelli ◽  
...  

1989 ◽  
Vol 160 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
B.T. McDermott ◽  
K.G. Reid ◽  
S.M. Bedair

AbstractWe have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.


1995 ◽  
Vol 77 (9) ◽  
pp. 4541-4543 ◽  
Author(s):  
C. N. Yeh ◽  
L. E. McNeil ◽  
L. J. Blue ◽  
T. Daniels‐Race

1998 ◽  
Vol 57 (12) ◽  
pp. 7103-7113 ◽  
Author(s):  
P. J. Klar ◽  
D. Wolverson ◽  
J. J. Davies ◽  
W. Heimbrodt ◽  
M. Happ

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  

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