Effects of Substrate Misorientation and the Growth Mechanism of Si Doped GaAs Grown on (111)A Substrate by MBE

1989 ◽  
Vol 160 ◽  
Author(s):  
Y. Okano ◽  
H. Seto ◽  
M. Shigeta ◽  
S. Nishine ◽  
I. Fujimoto ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Hole Concentration ◽  
Donor Site ◽  
Flux Ratio ◽  
Acceptor Pair ◽  
Mbe Growth ◽  
Donor Acceptor ◽  
Si Doped ◽  
Doping Mechanism ◽  
Donor Acceptor Pair

AbstractThe MBE growth of Si doped GaAs on slightly misoriented (111)A substrates was examined. The conduction types and the carrier concentrations were greatly affected by the degree of substrate misorientation. In the growth on an exactly (111)A oriented substrate, substantially all Si atoms acted as acceptors. With increase of the degree of misorientation and/or with increase of the flux ratio (JAs4/JGa), the number of donor-site Si atoms increased, that is, the hole concentration first decreased by autocompensation of Si and then the conductivity reversed from p-type to n-type. The photoluminescence of highly compensated (111)A films showed characteristics of donor-acceptor pair recombination. A doping mechanism including preferential decomposition of As4 molecules at the steps was proposed.

High quantum efficiency of photoluminescence in GaN and ZnO

2005 ◽  
Vol 892 ◽  
Author(s):  
Michael A. Reshchikov ◽  
Xing Gu ◽  
Bill Nemeth ◽  
Jeff Nause ◽  
Hadis Morkoç
Keyword(s):  
Quantum Efficiency ◽  
Molecular Beam ◽  
Shallow Donor ◽  
Nonradiative Recombination ◽  
Acceptor Pair ◽  
High Quantum Efficiency ◽  
Donor Acceptor ◽  
Si Doped ◽  
Donor Acceptor Pair ◽  
Zno Crystal

AbstractThe quantum efficiency (QE) of photoluminescence (PL) has been estimated in GaN and ZnO samples. A Si-doped GaN layer grown by molecular beam epitaxy (MBE) exhibited the highest QE of about 90% at low temperatures. Recombination via the shallow donor-acceptor pair transitions dominated in this sample. In contrast, a bulk ZnO crystal with the QE of PL of about 85% contained almost no defect- or impurity-related PL signatures besides the emission attributed to free and bound excitons. The sources of radiative and nonradiative recombination in GaN and ZnO are discussed.

Persistent Photoconductivity in n-Type GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
A. E. Wickenden ◽  
G. Beadie ◽  
D. D. Koleske ◽  
W. S. Rabinovich ◽  
J. A. Freitas
Keyword(s):  
Room Temperature ◽  
Deep Level ◽  
Persistent Photoconductivity ◽  
Acceptor Pair ◽  
Deep Level Defect ◽  
Sapphire Substrates ◽  
Defect Centers ◽  
Donor Acceptor ◽  
Si Doped ◽  
Donor Acceptor Pair

ABSTRACTPersistent photoconductivity has been observed in n-type Si-doped GaN grown on sapphire substrates by metalorganic vapor phase epitaxy. The effect has been seen both in films which are of electrically high quality, based on low temperature photoluminescence (PL) and Hall analysis, and in films which either appear to be compensated or which exhibit strong donor-acceptor pair recombination. The photoconductivity has been observed to persist for several days at room temperature (300K). Modeling of the resistance recovery by a stretched exponential treatment may suggest a distribution of deep level defect centers in the Si-doped GaN films.

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

1999 ◽  
Vol 75 (9) ◽  
pp. 1243-1245 ◽  
Author(s):  
I. Kuskovsky ◽  
D. Li ◽  
G. F. Neumark ◽  
V. N. Bondarev ◽  
P. V. Pikhitsa
Keyword(s):  
Continuous Wave ◽  
Acceptor Pair ◽  
Potential Fluctuations ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair ◽  
Doped Materials

Photoassociation due to electron transfer. Exciplex formation in non-polar solvent

1971 ◽  
Vol 24 (9) ◽  
pp. 1797 ◽  
Author(s):  
RJ McDonald ◽  
BK Selinger
Keyword(s):  
Polar Solvent ◽  
Excitation Energy Transfer ◽  
Acceptor Pair ◽  
Excitation Spectra ◽  
Fluorescence Excitation ◽  
Exciplex Formation ◽  
Reversible Dissociation ◽  
Fluorescence Excitation Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Exciplexes may be formed by exciting either partner of a given electron donor-acceptor pair. As the formation of such exciplexes is reversible, dissociation may lead to excitation energy transfer. ��� The temperature dependence of fluorescence excitation spectra has proved to be a powerful tool for exploring these systems.

scholarly journals Non-radiative coupled donor-acceptor pair recombination in nanostructures based on nitrides and related phenomena

2018 ◽  
Vol 1124 ◽  
pp. 041023
Author(s):  
N A Talnishnikh ◽  
E I Shabunina ◽  
N M Shmidt ◽  
A E Chernyakov ◽  
D S Arteev ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair
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