Kinetic Barriers to Strain Relaxation in GexSi1-x/Si Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
R. Hull ◽  
J.C. Bean
Keyword(s):  
Relaxation Process ◽  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Transmission Electron ◽  
Structure Geometry ◽  
Si Epitaxy ◽  
Annealing Experiments ◽  
Kinetic Barriers

AbstractWe discuss the kinetic barriers to misfit dislocation nucleation, propagation and interaction in lattice-mismatched GexSi1-x/Si epitaxy. Experimental real-time observations of the strain relaxation process via in-situ annealing experiments in a transmission electron microscope enable each of these processes to be separately studied. Quantitative parameters defining misfit dislocation processes may be derived; these are found to be highly dependent upon the structure geometry. The approximations involved in extending these measurements to a description of the relaxation process during growth are described in detail.

Experimental and Theoretical Analysis of Strain Relaxation in GexSi1-x/Si(100) Heteroepitaxy

1989 ◽  
Vol 148 ◽  
Author(s):  
R. Hull ◽  
J.C. Bean
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Fundamental Parameters ◽  
Interaction Processes ◽  
Transmission Electron ◽  
Wide Range ◽  
Relaxation Measurements ◽  
Good Agreement

ABSTRACTBy analyzing in-situ strain relaxation measurements of GexSi1-x/Si(100) epitaxy in a Transmission Electron Microscope, we are able to quantify the fundamental parameters which describe strain energy relaxation via misfit dislocation introduction. Quantitative descriptions of misfit dislocation nucleation, propagation and interaction processes are derived. The numerical parameters obtained from these experiments are then incorporated into a predictive theoretical model of strain relaxation whichrelies only upon experimentally measured quantities. Good agreement between experiment and theory is obtained over a wide range of data.

Comparison of Growth and Strain Relaxation of Si/Ge Superlattices Under Compressive and Tensile Strain Field

1991 ◽  
Vol 220 ◽  
Author(s):  
Werner Wegscheider ◽  
Karl Eberl ◽  
Gerhard Abstreiter ◽  
Hans Cerva ◽  
Helmut Oppolzer
Keyword(s):  
Growth Parameters ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Misfit Dislocations ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Short Period ◽  
Low Energy Electron ◽  
Superlattice Period

ABSTRACTOptimization of growth parameters of short period Si/Ge superlattices (SLs) has been achieved via in situ low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) measurements during homo- and heteroepitaxy on Si (001) and Ge (001) substrates. Transmission electron microscopy (TEM) reveals that pseudomorphic SimGe12-m (m = 9 and 3 for growth on Si and Ge, respectively) SLs with extended planar layering can be prepared almost defect-free by a modified molecular beam epitaxy (MBE) technique. Whereas the SLs on Ge can be deposited at a constant substrate temperature, high-quality growth on Si demands for temperature variations of more than 100°C within one superlattice period. Strain relaxation of these SLs with increasing number of periods has been directly compared by means of TEM. For the compressively strained structures grown on Si we found misfit dislocations of the type 60° (a/2)<110>. Under opposite strain conditions i.e. for growth on Ge, strain relief occurs only by microtwin formation through successive glide of 90° (a/6)<211> Shockley partial dislocations. This is consistent with a calculation of the activation energy for both cases based on a homogeneous dislocation nucleation model.

Misfit Dislocation Nucleation and Interactions at GexSi1-x/Si Interfaces

1989 ◽  
Vol 160 ◽  
Author(s):  
D.D. Perovic ◽  
G.C. Weatherly ◽  
D.C. Houghton
Keyword(s):  
Misfit Dislocation ◽  
Dominant Role ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Interfacial Dislocation ◽  
Dislocation Generation ◽  
Transmission Electron ◽  
Metastable Structures ◽  
Nucleation Mechanisms ◽  
Generation Mechanisms

AbstractIn the study of elastic strain relaxation in semiconductor heterostructures, a number of misfit dislocation generation mechanisms have been suggested to account for the high interfacial dislocation density observed in these almost defect-free crystals. Several MBE-grown GexSi1-x/Si heterostructures, both in the as-grown and annealed condition have been studied using transmission electron microscopy. The results indicate that some of the popular theories of dislocation generation are less important or not applicable based on both theoretical and experimental considerations. Specifically, it will be shown that: (i) heterogeneous sources play a dominant role in the nucleation mechanisms, (ii) the strain relaxation behaviour during MBE growth may be different from that observed in metastable structures annealed after growth and (iii) the Hagen-S trunk multiplication mechanism is inoperative under most conditions in this system.

Structural and Electronic Properties of GaAs/InGaAs/GaAs Heterostructures

1989 ◽  
Vol 160 ◽  
Author(s):  
J. M. Bonar ◽  
R. Hull ◽  
R. J. Malik ◽  
R. W. Ryan ◽  
J. F. Walker
Keyword(s):  
Misfit Dislocation ◽  
Heterojunction Bipolar Transistors ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Transmission Electron ◽  
Structural And Electronic Properties ◽  
Interfacial Dislocations ◽  
Made In

AbstractWe have made a study of GaAs/InGaAs/GaAs (001) strained layer heterostructures using Transmission Electron Microscopy (TEM) as a structural tool to determine the misfit dislocation structure and density as a function of Indium concentration. The average misfit dislocation spacing varies from > 10 µm for x < 0.3, to a few microns at x = 0.3, and drops to a few hundred Angstroms at x = 0.5. We did in-situ annealing experiments in order to study the strain relaxation process, measuring the temperature at which the structure begins to relax, and the dislocation velocities. Dislocation velocities are a few microns per second at the growth temperature of 450 ° C, and tens of microns per second at 690 ° C. In addition to interfacial dislocations in the usual <110> directions, in samples where x ≥ 0.4, we observed dislocations running in <100> directions. A study of the electrical characteristics of the material was made in parallel with the structural measurements: the mobility of the InGaAs layer was measured, the material was processed into Heterojunction Bipolar Transistors (HBT’s) and the gain was measured. The electrical characteristics initially improved with the addition of In, peaking at x = 0.1 and dropping sharply for higher x.

Mechanisms of Grain Growth in Free-Standing Nanograined Gold Thin Films

2005 ◽  
Vol 907 ◽  
Author(s):  
J. A. Gregg ◽  
K Hattar ◽  
C H Lei ◽  
I M Robertson
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Structural Changes ◽  
Dislocation Slip ◽  
Free Standing ◽  
Transmission Electron ◽  
Enhanced Properties ◽  
Gold Thin Films ◽  
Annealing Experiments

AbstractRetention of the enhanced properties reported for nanograined metallic systems requires that the nanostructure be insensitive to temperature and deformation. In situ transmission electron microscopy annealing experiments were employed to investigate the structural changes associated with the formation of micron-sized grains in nanograined evaporated gold thin films. This abnormal grain growth occurs randomly throughout the film. Twinning but not dislocation slip occurs in the growing grains until the grain size is in the hundreds of nanometer range. The twins appear to hinder growth and for grain growth to continue the twins must either be annihilated or be able to grow with the grain concurrently.

In Situ Electron Microscopy Studies of Surface Dynamical Processes

1998 ◽  
Vol 4 (S2) ◽  
pp. 608-609
Author(s):  
Ruud M. Tromp
Keyword(s):  
Electron Microscopy ◽  
Strain Relaxation ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Relaxation Phase ◽  
Transmission Electron ◽  
In Situ Electron Microscopy ◽  
Low Energy Electron ◽  
New Machine

To obtain a full and detailed understanding of the spatiotemporal dynamics of surface processes such as epitaxial growth, strain relaxation, phase transformations and phase transitions, chemisorption and etching, in situ real-time observations have proven to be invaluable. The development of two experimental techniques, i.e. Low Energy Electron Microscopy (LEEM) typically operating at electron energies below 10 eV, and Ultra-High-Vacuum Transmission Electron Microscopy (UHV-TEM) at several 100 keV, has made such in situ studies routinely possible. In many cases, the videodata obtained from such experiments are amenable to detailed, quantitative analysis, yielding statistical, kinetic and thermodynamic information that cannot be obtained in any other way.I will discuss recent experimental developments, including the design and construction of a new and improved LEEM instrument. Figure 1 shows a schematic diagram of this new machine. There are several features that distinguishes this design from most other LEEMs. One is the use of a 90 degree deflection magnetic prism array,

Deformation mechanisms at epitaxial semiconductor interfaces studied by in situ TEM

1992 ◽  
Vol 50 (1) ◽  
pp. 248-249
Author(s):  
R. Hull ◽  
J.C. Bean ◽  
F. Ross
Keyword(s):  
Strain Relaxation ◽  
High Stress ◽  
Dislocation Motion ◽  
Dislocation Nucleation ◽  
Deformation Mechanisms ◽  
Dynamic Strain ◽  
In Situ Tem ◽  
Stress Regime ◽  
Semiconductor Interfaces

We have studied deformation mechanisms at epitaxial semiconductor interfaces, primarily in the GexSi1-x/Si and InxGa1-xAs/GaAs systems, by in-situ annealing of metastably strained films in the transmission electron microscope (TEM). This allows direct, real-time, observation and recording of dynamic strain relaxation phenomena such as misfit dislocation nucleation, propagation and interaction mechanisms. This geometry also allows considerable insight into fundamental dislocation physics, as we are able, for example, to accurately quantify dislocation propagation velocities as functions of well-defined effective stresses (in the 108 - 109 pa regime)in the epitaxial layers, and to vary dislocation structure and character by varying the orientation of the epitaxial interface. Comparison with measurements of dislocation velocities in bulk semiconductors and with models of dislocation motion via kink propagation, allows extension of existing measurements and models to the thin film, high stress regime.

Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1−xGex Layers on Si(001) Substrates

2001 ◽  
Vol 686 ◽  
Author(s):  
S.H. Christiansen ◽  
P.M. Mooney ◽  
J.O. Chu ◽  
A. Grill
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Three Dimensional ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Transmission Electron ◽  
Microscopy Techniques

AbstractStrain relaxation in He+-implanted and annealed Si(001)/Si1−xGex heterostructures was investigated using transmission electron microscopy techniques and x-ray diffraction. Depending on the implant conditions, bubbles and/or platelets form below the Si/Si1−xGex interface upon annealing and act as nucleation sources for dislocation loops. The dislocation loops extend to the interface and form a misfit dislocation network there, resulting in relaxation of 30-80% of the strain in layers as thin as 100-300 nm. When bubbles form close to the interface, dislocations nucleate by a climb loop mechanism. When smaller bubbles form deeper in the Si substrate an irregular three-dimensional dislocation network forms below the interface resulting in an irregular misfit dislocation network at the interface. When platelets form deeper in the Si substrate, prismatic punching of dislocation loops is observed and dislocation reactions of misfit dislocations at the interface result in Lomer dislocation formation.

Convenient Preparation of High-Quality Specimens for Annealing Experiments in the Transmission Electron Microscope

2014 ◽  
Vol 20 (6) ◽  
pp. 1638-1645 ◽  
Author(s):  
Martial Duchamp ◽  
Qiang Xu ◽  
Rafal E Dunin-Borkowski
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Back Side ◽  
High Quality ◽  
Side Milling ◽  
Transmission Electron ◽  
Annealing Experiments

AbstractA procedure based on focused ion beam milling and in situ lift-out is introduced for the preparation of high-quality specimens for in situ annealing experiments in the transmission electron microscope. The procedure allows an electron-transparent lamella to be cleaned directly on a heating chip using a low ion energy and back-side milling in order to minimize redeposition and damage. The approach is illustrated through the preparation of an Al–Mn–Fe complex metallic alloy specimen.

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