Experimental and Theoretical Analysis of Strain Relaxation in GexSi1-x/Si(100) Heteroepitaxy

1989 ◽  
Vol 148 ◽  
Author(s):  
R. Hull ◽  
J.C. Bean
Keyword(s):  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Fundamental Parameters ◽  
Interaction Processes ◽  
Transmission Electron ◽  
Wide Range ◽  
Relaxation Measurements ◽  
Good Agreement

ABSTRACTBy analyzing in-situ strain relaxation measurements of GexSi1-x/Si(100) epitaxy in a Transmission Electron Microscope, we are able to quantify the fundamental parameters which describe strain energy relaxation via misfit dislocation introduction. Quantitative descriptions of misfit dislocation nucleation, propagation and interaction processes are derived. The numerical parameters obtained from these experiments are then incorporated into a predictive theoretical model of strain relaxation whichrelies only upon experimentally measured quantities. Good agreement between experiment and theory is obtained over a wide range of data.

Kinetic Barriers to Strain Relaxation in GexSi1-x/Si Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
R. Hull ◽  
J.C. Bean
Keyword(s):  
Relaxation Process ◽  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Transmission Electron ◽  
Structure Geometry ◽  
Si Epitaxy ◽  
Annealing Experiments ◽  
Kinetic Barriers

AbstractWe discuss the kinetic barriers to misfit dislocation nucleation, propagation and interaction in lattice-mismatched GexSi1-x/Si epitaxy. Experimental real-time observations of the strain relaxation process via in-situ annealing experiments in a transmission electron microscope enable each of these processes to be separately studied. Quantitative parameters defining misfit dislocation processes may be derived; these are found to be highly dependent upon the structure geometry. The approximations involved in extending these measurements to a description of the relaxation process during growth are described in detail.

Comparison of Growth and Strain Relaxation of Si/Ge Superlattices Under Compressive and Tensile Strain Field

1991 ◽  
Vol 220 ◽  
Author(s):  
Werner Wegscheider ◽  
Karl Eberl ◽  
Gerhard Abstreiter ◽  
Hans Cerva ◽  
Helmut Oppolzer
Keyword(s):  
Growth Parameters ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Misfit Dislocations ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Short Period ◽  
Low Energy Electron ◽  
Superlattice Period

ABSTRACTOptimization of growth parameters of short period Si/Ge superlattices (SLs) has been achieved via in situ low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) measurements during homo- and heteroepitaxy on Si (001) and Ge (001) substrates. Transmission electron microscopy (TEM) reveals that pseudomorphic SimGe12-m (m = 9 and 3 for growth on Si and Ge, respectively) SLs with extended planar layering can be prepared almost defect-free by a modified molecular beam epitaxy (MBE) technique. Whereas the SLs on Ge can be deposited at a constant substrate temperature, high-quality growth on Si demands for temperature variations of more than 100°C within one superlattice period. Strain relaxation of these SLs with increasing number of periods has been directly compared by means of TEM. For the compressively strained structures grown on Si we found misfit dislocations of the type 60° (a/2)<110>. Under opposite strain conditions i.e. for growth on Ge, strain relief occurs only by microtwin formation through successive glide of 90° (a/6)<211> Shockley partial dislocations. This is consistent with a calculation of the activation energy for both cases based on a homogeneous dislocation nucleation model.

Misfit Dislocation Nucleation and Interactions at GexSi1-x/Si Interfaces

1989 ◽  
Vol 160 ◽  
Author(s):  
D.D. Perovic ◽  
G.C. Weatherly ◽  
D.C. Houghton
Keyword(s):  
Misfit Dislocation ◽  
Dominant Role ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Interfacial Dislocation ◽  
Dislocation Generation ◽  
Transmission Electron ◽  
Metastable Structures ◽  
Nucleation Mechanisms ◽  
Generation Mechanisms

AbstractIn the study of elastic strain relaxation in semiconductor heterostructures, a number of misfit dislocation generation mechanisms have been suggested to account for the high interfacial dislocation density observed in these almost defect-free crystals. Several MBE-grown GexSi1-x/Si heterostructures, both in the as-grown and annealed condition have been studied using transmission electron microscopy. The results indicate that some of the popular theories of dislocation generation are less important or not applicable based on both theoretical and experimental considerations. Specifically, it will be shown that: (i) heterogeneous sources play a dominant role in the nucleation mechanisms, (ii) the strain relaxation behaviour during MBE growth may be different from that observed in metastable structures annealed after growth and (iii) the Hagen-S trunk multiplication mechanism is inoperative under most conditions in this system.

“Barrierless” Misfit Dislocation Nucleation in SiGe/Si Strained Layer Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
D.D. Perovic ◽  
D.C. Houghton
Keyword(s):  
Activation Energy ◽  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Theoretical Treatment ◽  
Misfit Dislocations ◽  
Plan View ◽  
Strained Layer ◽  
Wide Range ◽  
Peierls Barrier

ABSTRACTThe study of the critical thickness/strain phenomenon inherent in metastable, layered heterostructures has led to the development of several models which describe elastic strain relaxation. Hitherto, the nucleation of misfit dislocations required for coherency breakdown is the least well understood aspect of strain relaxation, due to the paucity of experimental data. Moreover, existing theoretical calculations predict relatively large activation energy barriers (>10 eV) for misfit dislocation nucleation in relatively low misfit (<2%) systems. In this work it will be shown that the nucleation of misfit dislocations can occur spontaneously demonstrating a vanishingly small activation energy barrier. Specifically, experimental studies of a wide range of GexSi1−x/Si (x< 0.5) hetero-structures, grown by MBE and CVD techniques, have provided quantitative data from bulk specimens on the observed misfit dislocation nucleation rate and activation energy using large-area diagnostic techniques (eg. chemical etching/Nomarski microscopy). In parallel, the strained layer microstructure was studied in detail using crosssectional and plan-view electron microscopy in order to identify a new dislocation nucleation mechanism, the ‘double half-loop’ source. From the combined macroscopic and microscopic analyses, a theoretical treatment has been developed based on nucleation stress and energy criteria which predicts a “barrierless” nucleation process exists even at low misfits (< 1%). Accordingly, the observed misfit dislocation nucleation event has been found both experimentally and theoretically to be rate-controlled solely by Peierls barrier dependent, glide-activated processes with activation energies of ∼2 eV.

Structural and Electronic Properties of GaAs/InGaAs/GaAs Heterostructures

1989 ◽  
Vol 160 ◽  
Author(s):  
J. M. Bonar ◽  
R. Hull ◽  
R. J. Malik ◽  
R. W. Ryan ◽  
J. F. Walker
Keyword(s):  
Misfit Dislocation ◽  
Heterojunction Bipolar Transistors ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Transmission Electron ◽  
Structural And Electronic Properties ◽  
Interfacial Dislocations ◽  
Made In

AbstractWe have made a study of GaAs/InGaAs/GaAs (001) strained layer heterostructures using Transmission Electron Microscopy (TEM) as a structural tool to determine the misfit dislocation structure and density as a function of Indium concentration. The average misfit dislocation spacing varies from > 10 µm for x < 0.3, to a few microns at x = 0.3, and drops to a few hundred Angstroms at x = 0.5. We did in-situ annealing experiments in order to study the strain relaxation process, measuring the temperature at which the structure begins to relax, and the dislocation velocities. Dislocation velocities are a few microns per second at the growth temperature of 450 ° C, and tens of microns per second at 690 ° C. In addition to interfacial dislocations in the usual <110> directions, in samples where x ≥ 0.4, we observed dislocations running in <100> directions. A study of the electrical characteristics of the material was made in parallel with the structural measurements: the mobility of the InGaAs layer was measured, the material was processed into Heterojunction Bipolar Transistors (HBT’s) and the gain was measured. The electrical characteristics initially improved with the addition of In, peaking at x = 0.1 and dropping sharply for higher x.

scholarly journals Comparison of Above-Water Seabird and TriOS Radiometers along an Atlantic Meridional Transect

2020 ◽  
Vol 12 (10) ◽  
pp. 1669
Author(s):  
Krista Alikas ◽  
Viktor Vabson ◽  
Ilmar Ansko ◽  
Gavin H. Tilstone ◽  
Giorgio Dall’Olmo ◽  
...  
Keyword(s):  
State Of The Art ◽  
Ocean Color ◽  
Percentage Difference ◽  
Wide Range ◽  
Before And After ◽  
Reference Measurements ◽  
Satellite Ocean Color ◽  
Good Agreement

The Fiducial Reference Measurements for Satellite Ocean Color (FRM4SOC) project has carried out a range of activities to evaluate and improve the state-of-the-art in ocean color radiometry. This paper described the results from a ship-based intercomparison conducted on the Atlantic Meridional Transect 27 from 23rd September to 5th November 2017. Two different radiometric systems, TriOS-Radiation Measurement Sensor with Enhanced Spectral resolution (RAMSES) and Seabird-Hyperspectral Surface Acquisition System (HyperSAS), were compared and operated side-by-side over a wide range of Atlantic provinces and environmental conditions. Both systems were calibrated for traceability to SI (Système international) units at the same optical laboratory under uniform conditions before and after the field campaign. The in situ results and their accompanying uncertainties were evaluated using the same data handling protocols. The field data revealed variability in the responsivity between TRiOS and Seabird sensors, which is dependent on the ambient environmental and illumination conditions. The straylight effects for individual sensors were mostly within ±3%. A near infra-red (NIR) similarity correction changed the water-leaving reflectance (ρw) and water-leaving radiance (Lw) spectra significantly, bringing also a convergence in outliers. For improving the estimates of in situ uncertainty, it is recommended that additional characterization of radiometers and environmental ancillary measurements are undertaken. In general, the comparison of radiometric systems showed agreement within the evaluated uncertainty limits. Consistency of in situ results with the available Sentinel-3A Ocean and Land Color Instrument (OLCI) data in the range from (400…560) nm was also satisfactory (−8% < Mean Percentage Difference (MPD) < 15%) and showed good agreement in terms of the shape of the spectra and absolute values.

scholarly journals Sample Preparation Methodologies for In Situ Liquid and Gaseous Cell Analytical Transmission Electron Microscopy of Electropolished Specimens

2016 ◽  
Vol 22 (6) ◽  
pp. 1350-1359 ◽  
Author(s):  
Xiang Li Zhong ◽  
Sibylle Schilling ◽  
Nestor J. Zaluzec ◽  
M. Grace Burke
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
General Procedure ◽  
Ion Beam ◽  
Metals And Alloys ◽  
Stainless Steel Sample ◽  
Transmission Electron ◽  
Wide Range

AbstractIn recent years, an increasing number of studies utilizing in situ liquid and/or gaseous cell scanning/transmission electron microscopy (S/TEM) have been reported. Because of the difficulty in the preparation of suitable specimens, these environmental S/TEM studies have been generally limited to studies of nanoscale structured materials such as nanoparticles, nanowires, or sputtered thin films. In this paper, we present two methodologies which have been developed to facilitate the preparation of electron-transparent samples from conventional bulk metals and alloys for in situ liquid/gaseous cell S/TEM experiments. These methods take advantage of combining sequential electrochemical jet polishing followed by focused ion beam extraction techniques to create large electron-transparent areas for site-specific observation. As an example, we illustrate the application of this methodology for the preparation of in situ specimens from a cold-rolled Type 304 austenitic stainless steel sample, which was subsequently examined in both 1 atm of air as well as fully immersed in a H2O environment in the S/TEM followed by hyperspectral imaging. These preparation techniques can be successfully applied as a general procedure for a wide range of metals and alloys, and are suitable for a variety of in situ analytical S/TEM studies in both aqueous and gaseous environments.

In Situ Electron Microscopy Studies of Surface Dynamical Processes

1998 ◽  
Vol 4 (S2) ◽  
pp. 608-609
Author(s):  
Ruud M. Tromp
Keyword(s):  
Electron Microscopy ◽  
Strain Relaxation ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Relaxation Phase ◽  
Transmission Electron ◽  
In Situ Electron Microscopy ◽  
Low Energy Electron ◽  
New Machine

To obtain a full and detailed understanding of the spatiotemporal dynamics of surface processes such as epitaxial growth, strain relaxation, phase transformations and phase transitions, chemisorption and etching, in situ real-time observations have proven to be invaluable. The development of two experimental techniques, i.e. Low Energy Electron Microscopy (LEEM) typically operating at electron energies below 10 eV, and Ultra-High-Vacuum Transmission Electron Microscopy (UHV-TEM) at several 100 keV, has made such in situ studies routinely possible. In many cases, the videodata obtained from such experiments are amenable to detailed, quantitative analysis, yielding statistical, kinetic and thermodynamic information that cannot be obtained in any other way.I will discuss recent experimental developments, including the design and construction of a new and improved LEEM instrument. Figure 1 shows a schematic diagram of this new machine. There are several features that distinguishes this design from most other LEEMs. One is the use of a 90 degree deflection magnetic prism array,

Rapid Thermal Processing of Buried Sil−xGex Strained Layers; Photoluminescence Decay and Misfit Dislocation Generation.

1990 ◽  
Vol 198 ◽  
Author(s):  
D.C. Houghton ◽  
N.L. Rowell
Keyword(s):  
Quantum Wells ◽  
Misfit Dislocation ◽  
Thermal Processing ◽  
Internal Quantum Efficiency ◽  
Dislocation Nucleation ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Dislocation Generation ◽  
Strained Layers ◽  
Wide Range

ABSTRACTThe thermal constraints for device processing imposed by strain relaxation have been determined for a wide range of Si-Ge strained heterostructures. Misfit dislocation densities and glide velocities in uncapped Sil-xGex alloy layers, Sil-xGex single and multiple quantum wells have been measured using defect etching and TEM for a range of anneal temperatures (450°C-1000°C) and anneal times (5s-2000s). The decay of an intense photoluminescence peak (∼ 10% internal quantum efficiency ) from buried Si1-xGex strained layers has been correlated with the generation of misfit dislocations in adjacent Sil-xGex /Si interfaces. The misfit dislocation nucleation rate and glide velocity for all geometries and alloy compositions (0<x<0.25) were found to be thermally activated processes with activation energies of (2.5±0.2)eV and (2.3-0.65x)eV, respectively. The time-temperature regime available for thermal processing is mapped out as a function of dislocation density using a new kinetic model.

Development of Wet Environmental TEM (Wet-ETEM) for In Situ Studies of Liquid-Catalyst Reactions on the Nanoscale

2002 ◽  
Vol 8 (1) ◽  
pp. 21-28 ◽  
Author(s):  
Pratibha L. Gai
Keyword(s):  
Biological Sciences ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Transmission Electron ◽  
Wide Range ◽  
Environmental Tem ◽  
Nanoscale Imaging ◽  
Solution Gas

We present the development of in situ wet environmental transmission electron microscopy (Wet-ETEM) for direct probing of controlled liquid–catalyst reactions at operating temperatures on the nanoscale. The first nanoscale imaging and electron diffraction of dynamic liquid hydrogenation and polymerization reactions in the manufacture of polyamides reported here opens up new opportunities for high resolution studies of a wide range of solution–solid and solution–gas–solid reactions in the chemical and biological sciences.

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