Spectroscopic Ellipsometry as a Non-Destructive Technique for Characterization of Atomic-Scale Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
J.L. Stehle ◽  
J.P. Piel ◽  
J.H. Lecat ◽  
C. Pickering ◽  
L.C. Hammond
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Crystalline Silicon ◽  
Linear Regression Analysis ◽  
Atomic Scale ◽  
Physical Parameters ◽  
Oxide Interfaces ◽  
Non Destructive ◽  
Calculated Model ◽  
Better Than

ABSTRACTAnalysis of oxide interfaces with semi-conductor substrates, such as crystalline silicon, gallium arsenide, or indium phosphide is critical in processing and electrical performances. Interfaces can be characterized by spectroscopic ellipsometry (SE), which has a wide spectral range (1.3 to 5.3 eV ) allowing an optical penetration depth of 10 nm to a few microns.A multilayer stack can be characterized in terms of its layer thicknesses and composition. These physical parameters must be calculated through a mathematical model. Linear regression analysis is used to minimize the differences between the measured spectrum and the calculated model. If necessary, an interlayer can be introduced into the model to enhance the fit. This can be complemented by a new method involving calculation of apparent index values which amplifies interface sensivity allowing the thickness to be measured to better than 2 Angstroms. Examples will be given.

Non-destructive characterization of III–V alloy multilayer structures using spectroscopic ellipsometry

1993 ◽  
Vol 233 (1-2) ◽  
pp. 171-175 ◽  
Author(s):  
C. Pickering ◽  
R.T. Carline ◽  
N.S. Garawal ◽  
J.L. Stehlé ◽  
J.P. Piel ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Multilayer Structures ◽  
Non Destructive ◽  
Non Destructive Characterization

Characterization of Ion-Implanted Aluminum and Iron by Spectroscopic Ellipsometry

1990 ◽  
Vol 201 ◽  
Author(s):  
J. S. Brodkin ◽  
W. Franzen ◽  
R. J. Culbertson ◽  
J. M. Williams
Keyword(s):  
Aluminum Alloy ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Chromium Ions ◽  
Non Destructive ◽  
Non Destructive Characterization ◽  
Ion Implanted

AbstractThe change in the optical constants of aluminum alloy and iron samples caused by implantation with nitrogen and chromium ions has been investigated by spectroscopic ellipsometry. The objective is to develop a method for simple, non-destructive characterization of ion-implanted metals.

scholarly journals Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry

1989 ◽  
Vol 2 (1-3) ◽  
pp. 131-137 ◽  
Author(s):  
M. Fried ◽  
T. Lohner ◽  
J.M.M. De Nijs ◽  
A. Van Silfhout ◽  
L.J. Hanekamp ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicon On Insulator ◽  
Non Destructive ◽  
Non Destructive Characterization

Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

2004 ◽  
Vol 809 ◽  
Author(s):  
N. V. Nguyen ◽  
J. E. Maslar ◽  
Jin-Yong Kim ◽  
Jin-Ping Han ◽  
Jin-Won Park ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Crystalline Silicon ◽  
Silicon On Insulator ◽  
Structural Defects ◽  
Structural Quality ◽  
Ellipsometry Data

ABSTRACTThe crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect slight structural defects in the SOI layer. If a pure crystalline silicon dielectric function is assumed for the SOI layer, the spectroscopic ellipsometry data fitting yields an unacceptably large discrepancy between the experimental and modeled data. The best fits for all the samples result in a dielectric function of the SOI layer that consists of a physical mixture of crystalline silicon and about 4 % to 7 % of amorphous silicon. Using such a mixture indicates that there are still some defects in the SOI layer when compared with the high-quality bulk crystalline silicon. This observation is further supported by Raman spectroscopy measurements. The Raman spectra of all SOI samples exhibit a feature at about 495 cm−1 that is not observed in the crystalline silicon spectrum. Features similar to the 495 cm−1 feature have been reported in the literature and attributed to dislocations or faults in the silicon lattice.

scholarly journals Non-destructive characterization of corroded glass surfaces by spectroscopic ellipsometry

2018 ◽  
Vol 481 ◽  
pp. 260-266 ◽  
Author(s):  
Tiffany C. Kaspar ◽  
Joelle T. Reiser ◽  
Joseph V. Ryan ◽  
Nathalie A. Wall
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Glass Surfaces ◽  
Non Destructive ◽  
Non Destructive Characterization

scholarly journals In-Gel Isolation and Characterization of Large (and Other) Phages

Viruses ◽  
2020 ◽  
Vol 12 (4) ◽  
pp. 410
Author(s):  
Philip Serwer ◽  
Elena T. Wright
Keyword(s):  
Phage Type ◽  
Genomic Diversity ◽  
Agarose Gels ◽  
Isolation And Characterization ◽  
Purification Technique ◽  
Agar Gels ◽  
Type Size ◽  
Non Destructive ◽  
Better Than

We review some aspects of the rapid isolation of, screening for and characterization of jumbo phages, i.e., phages that have dsDNA genomes longer than 200 Kb. The first aspect is that, as plaque-supporting gels become more concentrated, jumbo phage plaques become smaller. Dilute agarose gels are better than conventional agar gels for supporting plaques of both jumbo phages and, prospectively, the even larger (>520 Kb genome), not-yet-isolated mega-phages. Second, dilute agarose gels stimulate propagation of at least some jumbo phages. Third, in-plaque techniques exist for screening for both phage aggregation and high-in-magnitude, negative average electrical surface charge density. The latter is possibly correlated with high phage persistence in blood. Fourth, electron microscopy of a thin section of a phage plaque reveals phage type, size and some phage life cycle information. Fifth, in-gel propagation is an effective preparative technique for at least some jumbo phages. Sixth, centrifugation through sucrose density gradients is a relatively non-destructive jumbo phage purification technique. These basics have ramifications in the development of procedures for (1) use of jumbo phages for phage therapy of infectious disease, (2) exploration of genomic diversity and evolution and (3) obtaining accurate metagenomic analyses.

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