Characterization of the interface between Ge+‐implanted crystalline silicon and its thermally grown oxide by spectroscopic ellipsometry

1990 ◽  
Vol 67 (2) ◽  
pp. 599-603 ◽  
Author(s):  
N. V. Nguyen ◽  
K. Vedam ◽  
J. Narayan
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Crystalline Silicon ◽  
Thermally Grown Oxide ◽  
Thermally Grown

Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

2004 ◽  
Vol 809 ◽  
Author(s):  
N. V. Nguyen ◽  
J. E. Maslar ◽  
Jin-Yong Kim ◽  
Jin-Ping Han ◽  
Jin-Won Park ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Crystalline Silicon ◽  
Silicon On Insulator ◽  
Structural Defects ◽  
Structural Quality ◽  
Ellipsometry Data

ABSTRACTThe crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect slight structural defects in the SOI layer. If a pure crystalline silicon dielectric function is assumed for the SOI layer, the spectroscopic ellipsometry data fitting yields an unacceptably large discrepancy between the experimental and modeled data. The best fits for all the samples result in a dielectric function of the SOI layer that consists of a physical mixture of crystalline silicon and about 4 % to 7 % of amorphous silicon. Using such a mixture indicates that there are still some defects in the SOI layer when compared with the high-quality bulk crystalline silicon. This observation is further supported by Raman spectroscopy measurements. The Raman spectra of all SOI samples exhibit a feature at about 495 cm−1 that is not observed in the crystalline silicon spectrum. Features similar to the 495 cm−1 feature have been reported in the literature and attributed to dislocations or faults in the silicon lattice.

Spectroscopic Ellipsometry as a Non-Destructive Technique for Characterization of Atomic-Scale Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
J.L. Stehle ◽  
J.P. Piel ◽  
J.H. Lecat ◽  
C. Pickering ◽  
L.C. Hammond
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Crystalline Silicon ◽  
Linear Regression Analysis ◽  
Atomic Scale ◽  
Physical Parameters ◽  
Oxide Interfaces ◽  
Non Destructive ◽  
Calculated Model ◽  
Better Than

ABSTRACTAnalysis of oxide interfaces with semi-conductor substrates, such as crystalline silicon, gallium arsenide, or indium phosphide is critical in processing and electrical performances. Interfaces can be characterized by spectroscopic ellipsometry (SE), which has a wide spectral range (1.3 to 5.3 eV ) allowing an optical penetration depth of 10 nm to a few microns.A multilayer stack can be characterized in terms of its layer thicknesses and composition. These physical parameters must be calculated through a mathematical model. Linear regression analysis is used to minimize the differences between the measured spectrum and the calculated model. If necessary, an interlayer can be introduced into the model to enhance the fit. This can be complemented by a new method involving calculation of apparent index values which amplifies interface sensivity allowing the thickness to be measured to better than 2 Angstroms. Examples will be given.

An Electron Microscope Study of Interdiffusion and Compound Formation in Ta-Au Thin Films

1973 ◽  
Vol 31 ◽  
pp. 32-33 ◽  
Author(s):  
T. C. Tisone ◽  
S. Lau
Keyword(s):  
Electron Microscope ◽  
Electron Microscope Study ◽  
Thermally Grown Oxide ◽  
Ion Milling ◽  
Compound Formation ◽  
Technology Application ◽  
Transmission Electron ◽  
Before And After ◽  
Au Thin Films

In a study of the properties of a Ta-Au metallization system for thin film technology application, the interdiffusion between Ta(bcc)-Au, βTa-Au and Ta2M-Au films was studied. Considered here is a discussion of the use of the transmission electron microscope(TEM) in the identification of phases formed and characterization of the film microstructures before and after annealing.The films were deposited by sputtering onto silicon wafers with 5000 Å of thermally grown oxide. The film thicknesses were 2000 Å of Ta and 2000 Å of Au. Samples for TEM observation were prepared by ultrasonically cutting 3mm disks from the wafers. The disks were first chemically etched from the silicon side using a HNO3 :HF(19:5) solution followed by ion milling to perforation of the Au side.

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