Laser Induced Chemical Vapor Deposition of GaN

1989 ◽  
Vol 158 ◽  
Author(s):  
A. Kobayashi ◽  
T. Asai ◽  
S. Kawai ◽  
P.J. Chong
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Adsorbed Species ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique

ABSTRACTThin films of GaN were grown on the Al2O3 (0001) substrate by the laserinduced chemical vapor deposition technique. Morphology were different for the films grown with and without laser irradiation. Moreover, the density of nucleus and the growth rate in the case of the growth with the parallel irradiation were greater than those without irradiation. Differences were attributed to presence of photo-dissociated species in the case of the laser irradiation. Additional irradiation normal to the substrate decreased the rate, probably because of the accelerated desorption of the reactive adsorbed species.

Functionalizable and electrically conductive thin films formed by oxidative chemical vapor deposition (oCVD) from mixtures of 3-thiopheneethanol (3TE) and ethylene dioxythiophene (EDOT)

2016 ◽  
Vol 4 (16) ◽  
pp. 3403-3414 ◽  
Author(s):  
Hilal Goktas ◽  
Xiaoxue Wang ◽  
Nicolas D. Boscher ◽  
Stephen Torosian ◽  
Karen K. Gleason
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optoelectronic Properties ◽  
Deposition Technique ◽  
Electrically Conductive ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Conductive Thin Films

Tuning the optoelectronic properties and the density of hydroxyl pendant groups of 3-thiopheneethanol-co-ethylenedioxythiohene produced via an oxidative chemical vapor deposition technique.

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