Lateral seeding epitaxy by cw Ar laser irradiation and by high temperature chemical vapor deposition technique

1982 ◽  
Vol 53 (9) ◽  
pp. 6387-6390 ◽  
Author(s):  
S. Nagao ◽  
S. Kayano ◽  
N. Tsubouchi ◽  
T. Nishimura ◽  
Y. Akasaka
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique

Characterization of boron nitride thin films synthesized by plasma-assisted chemical vapor deposition technique

1996 ◽  
Vol 54 ◽  
pp. 638-639
Author(s):  
J. Liu ◽  
S. H. Lin ◽  
B. J. Feldman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique

Boron nitride (BN) is a well-known non-oxide ceramic that has interesting and useful properties for potential industrial applications. The attractive properties of BN include its high-temperature shock stability, high electrical resistivity, anisotropic thermal conductivity and desirable mechanical properties. The potential uses of BN films include oxidation-resistant and anti-corrosive coatings, sensors, optical devices, and high temperature electronics. Thin films of BN have been obtained by a variety of growth techniques including sputtering, ion plating, evaporation, and chemical vapor deposition and associated techniques. To optimize the growth parameters and the performance of BN films, advanced electron microscopy techniques have been employed to study the structural evolution of BN films synthesized by plasma assisted chemical vapor deposition technique (PACVD).The BN films were grown in a capacitively coupled rf plasma reactor with a feedstock of diborane (B2H6), ammonia (NH3), and hydrogen (H2). The growth parameters were the same as previously reported. Chemical analyses of the grown BN films showed that they had significantly more boron (44 at.%) than nitrogen (33 at.%) and contained a large amount of hydrogen (23 at.%).

Laser Induced Chemical Vapor Deposition of GaN

1989 ◽  
Vol 158 ◽  
Author(s):  
A. Kobayashi ◽  
T. Asai ◽  
S. Kawai ◽  
P.J. Chong
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Adsorbed Species ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique

ABSTRACTThin films of GaN were grown on the Al2O3 (0001) substrate by the laserinduced chemical vapor deposition technique. Morphology were different for the films grown with and without laser irradiation. Moreover, the density of nucleus and the growth rate in the case of the growth with the parallel irradiation were greater than those without irradiation. Differences were attributed to presence of photo-dissociated species in the case of the laser irradiation. Additional irradiation normal to the substrate decreased the rate, probably because of the accelerated desorption of the reactive adsorbed species.

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