Investigation of Oxide/Metal Multilayers for Soft X-Ray Optics Fabricated by Ion Beam Sputterinc

MRS Proceedings ◽

10.1557/proc-157-335 ◽

1989 ◽

Vol 157 ◽

Cited By ~ 1

Author(s):

I. Kataoka ◽

T. Yoneiitsu ◽

K. Sekine ◽

I. Yaiada ◽

K. Etoh ◽

...

Keyword(s):

Surface Roughness ◽

Correlation Function ◽

Energy Region ◽

Ion Beam ◽

Strongly Correlated ◽

Rheed Pattern ◽

Ray Optics ◽

Ion Energy ◽

X Ray

ABSTRACTThe dependence of the ordering factor and surface roughness of aiorphous SiO2 and Ni filis fabricated by Dual Ion Beai Sputtering(DIBS) assisted by Ar+ ion boibardient were evaluated. The ordering factor tas defined as a quantity which shows the degree of aiorphousness froi ris value of correlation function of the RHEED pattern. The surface roughness was leasured with a Talystep systei and STM, and the data was evaluated with respect to the spatial wavelength.For aiorphous SiO2 filis, the surface roughness is strongly correlated with the ordering factor as a parameter of the assisting Ar+ ion energy, and it depends on the fill structure. Siiilar relationship was not observed for Ni filis, because of the traced surface roughness of substrate in the energy region investigated.

Download Full-text

Effect of surface roughness of substrate on grazing incidence x-ray optics

10.1117/12.332518 ◽

1998 ◽

Author(s):

Keisuke Tamura ◽

Koujun Yamashita ◽

Hideyo Kunieda ◽

Yuzuru Tawara ◽

Kazutoshi Haga ◽

...

Keyword(s):

Surface Roughness ◽

Grazing Incidence ◽

Ray Optics ◽

X Ray ◽

Effect Of Surface

Download Full-text

EFFECT OF ION-ENERGY ON THE PROPERTIES OF AMORPHOUS GaN FILMS PRODUCED BY ION-ASSISTED DEPOSITION

Modern Physics Letters B ◽

10.1142/s0217984901003275 ◽

2001 ◽

Vol 15 (28n29) ◽

pp. 1355-1360 ◽

Cited By ~ 5

Author(s):

UDAY LANKE ◽

ANNETTE KOO ◽

SIMON GRANVILLE ◽

JOE TRODAHL ◽

ANDREAS MARKWITZ ◽

...

Keyword(s):

Room Temperature ◽

Single Phase ◽

Thermal Evaporation ◽

Ion Beam ◽

Atomic Ratio ◽

Nuclear Reaction Analysis ◽

Ion Energy ◽

X Ray ◽

Nitrogen Ions ◽

Nitrogen Ion

Amorphous GaN films were deposited on various substrates viz. Si (100), quartz, glass, Al, stainless steel and glassy carbon by thermal evaporation of gallium in the presence of energetic nitrogen ions from a Kaufman source. The films were deposited at room temperature and 5 × 10-4 mbar nitrogen partial pressure. The effect of a low energy nitrogen ion beam during the synthesis of films was investigated for energies 40 eV and 90 eV. The N:Ga atomic ratio, bonding state, microstructure, surface morphology, and electrical properties of the deposited a-GaN films were studied by different characterisation techniques. The films are found to be X-ray amorphous in nature, which is confirmed by Raman spectroscopy. Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) indicate the N:Ga atomic ratio in the films. The 400-750 eV energy range is thought to be optimal for the production of single-phase amorphous GaN . The effect of ion-energy on optical, Raman, and electrical conductivity measurements of the films is also presented.

Download Full-text

Ion Beam Deposition of Epitaxial Silicon Films

MRS Proceedings ◽

10.1557/proc-485-13 ◽

1997 ◽

Vol 485 ◽

Author(s):

H. R. Khan ◽

H. Frey

Keyword(s):

Ion Beam ◽

Silicon Films ◽

Epitaxial Silicon ◽

X Ray Diffraction ◽

Ion Energy ◽

X Ray ◽

Ion Beam Deposition ◽

Si Films ◽

Silane Plasma ◽

Beam Deposition

AbstractSilicon films of thicknesses (100 – 800 nm) are deposited on Si[111] substrate at 490°C using Si+ ions of energies (20 – 70 eV) from Silane plasma. The structure of the films depends on the energy of Si+ ions and the film grows epitaxially for ion energy <20 eV. Si films are analyzed by X-ray diffraction technique.

Download Full-text

Surface and Bulk Microstructural Modifications in Amorphous Carbon Films after Post-Growth Low Energy Ion Beam Irradiation

MRS Proceedings ◽

10.1557/proc-650-r3.42 ◽

2000 ◽

Vol 650 ◽

Author(s):

P. Patsalas ◽

S. Logothetidis

Keyword(s):

Amorphous Carbon ◽

Amorphous Matrix ◽

Ion Beam ◽

Carbon Films ◽

Low Energy ◽

Beam Irradiation ◽

X Ray Diffraction ◽

Ion Beam Irradiation ◽

Ion Energy ◽

X Ray

ABSTRACTWe present the crystallization effects occurring in sputtered amorphous Carbon (a-C) thin films deposited on Si induced by post-growth low energy (0.5-1.5 keV) Ar+ ion beam irradiation (IBI). The a-C films after IBI have the form of an amorphous matrix with embedded crystalline regions. X-ray diffraction and Electron Microscopy measurements identified the crystalline phases of carbon and SiC. We study in detail the effects of ion energy and fluence on the crystallization process. It was found that low fluence (∼2×1016 ions/cm2) of ions with an optimum ion energy (∼1.5 keV) promoted the diamond formation. X-Ray Reflectivity (XRR) and Spectroscopic Ellipsometry were used to study the amorphous matrix. XRR discriminated the IBI induced surface and bulk effects through the density and the a-C surface roughness, showing surface smoothing to be more prominent for low energy IBI.

Download Full-text

The Effects of Ion Energy on Carbon and Tungsten Films Fabricated by Direct Ion Beam Deposition and Ion Beam Sputtering Deposition

MRS Proceedings ◽

10.1557/proc-223-359 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 3

Author(s):

I. Kataoka ◽

K. Ito ◽

N. Hoshi ◽

T. Yonemitsu ◽

K. Etoh ◽

...

Keyword(s):

Surface Roughness ◽

Ion Beam ◽

Amorphous Structure ◽

Film Structure ◽

Ion Beam Sputtering ◽

Ion Energy ◽

Sputtering Deposition ◽

Ion Beam Deposition ◽

Beam Sputtering ◽

Beam Deposition

ABSTRACTThe x-ray reflectivity and surface morphology of C/W multilayers fabricated by ion beam sputtering (IBS) method was evaluated. Also the surface roughness and amorphous structure of C and W films fabricated by direct ion beam deposition (DIBD) method were evaluated as a function of ion energy. The reflectivity was measured by the C-K line (4.47nm) and STM was used for surface roughness measurement and root-mean-square value of correlation function of the RHEED pattern was used for evaluation of amorphous structure. The reflectivity of C/W multilayer was about 69% of the theoretical one, and micro-columnar structures were observed from STM images. The film structure and surface roughness of DIBD film were changed with the depositing ion energy. The surface roughness of films becomes smaller as the depositing energy becomes higher in the energy range from 20 to 140eV.

Download Full-text

Surface roughness analysis of multilayer x-ray optics

10.1117/12.791525 ◽

2008 ◽

Cited By ~ 2

Author(s):

Vladimir V. Martynov ◽

Yuriy Y. Platonov

Keyword(s):

Surface Roughness ◽

Ray Optics ◽

X Ray ◽

Roughness Analysis

Download Full-text

Measurements of Thickness, Surface Roughness and Corrosion Performance of 1-10 nm Thick CNx Films

Magnetic Storage Symposium: Frontiers of Magnetic Hard Disk Drive Tribology and Technology ◽

10.1115/2003-trib-344 ◽

2003 ◽

Author(s):

Dejun Li ◽

Yanfeng Chen ◽

Yip-Wah Chung

Keyword(s):

Surface Roughness ◽

Rotation Speed ◽

Unit Area ◽

Mass Density ◽

Ion Beam ◽

X Ray ◽

Pulsed Dc ◽

Beam Analysis ◽

Pulsed Dc Magnetron Sputtering ◽

Cnx Films

Nitrogenated carbon (CNx) films were synthesized by using pulsed dc magnetron sputtering. When grown with substrate tilt of 45° and rotation speed of 20–25 rpm, the root-mean-square surface roughness is ∼0.3 nm when sampled over 20×20 μm2 areas, increasing to ∼0.4 nm when sampled over ∼0.05×3 cm2 using x-ray reflectivity measurements. X-ray reflectivity measurements showed that the mass density of these CNx films is ∼2.0 gm/cc, independent of film thickness from ∼1 to 10 nm, consistent with ion beam analysis. CNx films deposited with substrate tilt of 45° and rotation speed of 20–25 rpm have about 1/3 fewer corrosion spots per unit area than those without. Reducing CNx thickness from 3 to 1 nm results in marked increase in corrosion currents.

Download Full-text