Nucleation Studies of Lattice Matched and Mis-Matched Heteroepitaxial Layers Using the GaAs/AlxGa1−xP/Si System.

1989 ◽  
Vol 148 ◽  
Author(s):  
Thomas George ◽  
E. R. Weber ◽  
A.T. Wu ◽  
S. Nozaki ◽  
N. Noto ◽  
...  
Keyword(s):  
Surface Morphology ◽  
High Speed ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Lattice Match ◽  
Bulk Properties ◽  
Surface And Interface ◽  
Intermediate Layers ◽  
Fundamental Causes ◽  
Gaas Films

ABSTRACTHeteroepitaxial growth of GaAs on Silicon substrates is being actively pursued, since this technology offers numerous potential benefits in terms of optoelectronic and high speed devices. However a complete understanding of the fundamental causes for film properties such as surface morphology and crystal quality is still lacking at the present time. We present here the results of a study of GaAs grown on Silicon substrates using AlxGa1−xP intermediate layers. This system offers the advantage of studying the effects of surface properties and bulk properties of heteroepitaxial films separately. Surface and interface properties are shown to be the dominant factors in the growth of AlxGa1−xP on Si, where the lattice match between the two materials is very good. For low Al mole fractions the layers tend to form islands indicative of 3D growth, whereas for x>0.4, the layers are planar indicative of 2D growth. Bulk properties such as the lattice constant mismatch are presumed to play a key role in the growth of GaAs on AlxGa1−xP intermediate layers, where it is shown that the GaAs still has an island type nucleation phase, even though surface and interface factors such as contamination and polar-on-nonpolar growth are avoided. In addition the nucleation of the GaAs on the AlxGa1−xP intermediate layers appears to be modified by the nature of the AlxGa1−xP layer i.e. whether the intermediate layer is in the form of islands or a planar layer. The final surface morphology and the crystalline quality of 3gtm GaAs films grown on AlxGa1−xP intermediate layers can be correlated to the initial nucleation.

Chemical and Electrochemical Heteroepitaxial Growth of Chalcogenide Semiconductors from Solutions

1996 ◽  
Vol 451 ◽  
Author(s):  
D. Lincot ◽  
M. J. Furlong ◽  
M. Froment ◽  
R. Cortes ◽  
M. C. Bernard
Keyword(s):  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Basic Principles ◽  
Lattice Match ◽  
X Ray ◽  
Chalcogenide Semiconductors ◽  
Influence Of Temperature On ◽  
Deposition Processes ◽  
A Site ◽  
Site Selective

ABSTRACTChalcogenide semiconductors have been deposited epitaxially from aqueous solutions either chemically or electrochemically at growth rates of up to 0.7 μmhr−1. After recalling the basic principles of these deposition processes, results are presented concerning chemically deposited CdS on InP, GaP and CuInSe2 substrates, electrodeposited CdTe on InP, and CdSAnP heterostructures. Characterisation of these structures by RHEED, TEM, HRTEM, and glazing angle X ray diffraction allows to analyse the effects of substrate orientation, polarity, lattice match plus the influence of temperature on epitaxial growth. These results are discussed in terms of self organisation and a site selective growth mechanisms due to the free enegy of formation of each compound.

scholarly journals Surface Forming Criteria of Ti-6AL-4V Titanium Alloy under Laser Loading

2021 ◽  
Vol 11 (12) ◽  
pp. 5406
Author(s):  
Fei Yin ◽  
Xia Ye ◽  
Hongbing Yao ◽  
Pengyu Wei ◽  
Xumei Wang ◽  
...  
Keyword(s):  
Titanium Alloy ◽  
Surface Morphology ◽  
High Speed ◽  
Yttrium Aluminum Garnet ◽  
Laser Energy ◽  
Target Material ◽  
Nanosecond Laser ◽  
Laser Shock ◽  
Shock Condition ◽  
Key Factor

In order to study the spallation phenomenon of titanium alloy under the shock of nanosecond laser, the Neodymium-Yttrium-Aluminum Garnet laser was used to carry out laser shock experiments on the surface of titanium alloy. By observing and measuring the surface morphology of the target material, the forming factors and the changes of the surface morphology under different parameter settings, the forming criteria of the titanium alloy were obtained. The results show that under the single variable method, the change of laser energy can affect the target shape variable, and there is a positive correlation between them. When the thickness was greater than or equal to 0.08 mm, no obvious cracks were found in the targets. Moreover, the number of impact times was the key factor for the target deformation; with the growth of impact times, the target deformation gradually became larger until the crack appeared. The larger the diameter of the spot, the more likely the target was to undergo plastic deformation. The surface of titanium alloy with a thickness of 0.08 mm appeared to rebound under specific laser shock condition. The changes in the back of the target material were observed in real time through a high-speed camera, and the plasma induced by the laser was observed in the process. This study is based on the results of previous studies to obtain the titanium alloy forming criteria, which provides a basis for the setting of laser parameters and the thickness of the target when the nanosecond laser impacts the Ti-6AL-4V target.

Instabilities, Elasticity, and Wetting Effect in Multilayer Heteroepitaxial Growth

2003 ◽  
Vol 794 ◽  
Author(s):  
Zhi-Feng Huang ◽  
Rashmi C. Desai
Keyword(s):  
Periodic Structures ◽  
Morphological Evolution ◽  
Surface Profile ◽  
Theoretical Work ◽  
Semiconductor Films ◽  
Morphological Instability ◽  
Heteroepitaxial Growth ◽  
Surface And Interface ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTFor multilayer semiconductor films comprising various material layers, the coupling of elastic states in different layers as well as the nonequilibrium nature of the growing process are essential in understanding the surface and interface morphological instability and hence the growth mechanisms of nanostructures in the overall film. We present the theoretical work on the stress-driven instabilities during the heteroepitaxial growth of multilayers, based on the elastic analysis and the continuous nonequilibrium model. We develop a general theory which determines the morphological evolution of surface profile of the multilayer system, and then apply the results to two types of periodic structures that are being actively investigated: alternating tensile/compressive and strained/spacer multilayers. The wetting effect, which arises from the material properties changing across layer-layer interfaces, is incorporated. It exhibits a significant influence of stabilization on film morphology, particularly for the short-period superlattices. Our results are consistent with the experimental observations in AlAs/InAs/InP(001) and Ge/Si(001) multilayer structures.

Nucleation and Heterointerface Structure of InAs Epilayers Grown on InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
K. S. Chandra Sekhar ◽  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Surface Morphology ◽  
Electronic Properties ◽  
Growth Temperature ◽  
High Speed ◽  
Interface Roughness ◽  
Structural Defects ◽  
Lower Growth ◽  
Substrate Interface ◽  
Film Substrate ◽  
Inp Substrates

ABSTRACTHeteroepitaxial growth of indium arsenide films on indium phosphide substrates is being actively pursued since the electronic properties of these films make them promising materials for optoelectronic and other high speed devices. The various structural aspects of the film that affect their electronic properties are structural defects like dislocations, film-substrate interface roughness and chemical inhomogeneities. In InAs films, electrons accumulate at the film-air interface, making surface morphology an important factor that decides the electronic properties. The InAs films used in this study were grown on InP substrates by metal organic vapor deposition, at different temperatures. A higher growth temperature not only resulted in poor surface morphology of the film, but also created a rough film-substrate interface. However, at all deposition temperatures, the film-substrate interfaces are sharp. At lower growth temperature, the interfaces were flat. Films grown at lower temperatures had good surface morphology and a flat and shaip heterointerface.

High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates

1998 ◽  
Vol 45 (9) ◽  
pp. 2085-2088 ◽  
Author(s):  
Jyh-Jier Ho ◽  
Y.K. Fang ◽  
Kun-Hsien Wu ◽  
W.T. Hsieh ◽  
S.C. Huang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Speed ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Infrared Sensors ◽  
Amorphous Silicon Germanium

Integrated Photonic Circuits in Gallium Nitride and Aluminum Nitride

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450001 ◽  
Author(s):  
Chi Xiong ◽  
Wolfram Pernice ◽  
Carsten Schuck ◽  
Hong X. Tang
Keyword(s):  
High Speed ◽  
Optical Signal ◽  
Silicon Substrates ◽  
Material System ◽  
Group Iii ◽  
Electro Optic ◽  
New Material ◽  
Nanophotonic Circuits ◽  
Group Iii Nitride ◽  
On Chip

Integrated optics is a promising optical platform both for its enabling role in optical interconnects and applications in on-chip optical signal processing. In this paper, we discuss the use of group III-nitride (GaN, AlN) as a new material system for integrated photonics compatible with silicon substrates. Exploiting their inherent second-order nonlinearity we demonstrate and second, third harmonic generation in GaN nanophotonic circuits and high-speed electro-optic modulation in AlN nanophotonic circuits.

scholarly journals Integration of highly anisotropic multiferroic BaTiO3–Fe nanocomposite thin films on Si towards device applications

2020 ◽  
Vol 2 (9) ◽  
pp. 4172-4178
Author(s):  
Matias Kalaswad ◽  
Bruce Zhang ◽  
Xuejing Wang ◽  
Han Wang ◽  
Xingyao Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
Low Cost ◽  
Low Power Consumption ◽  
Silicon Substrates ◽  
Critical Step ◽  
Nanocomposite Thin Films ◽  
Device Applications

Integration of highly anisotropic multiferroic thin films on silicon substrates is a critical step towards low-cost devices, especially high-speed and low-power consumption memories.

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