Chemical and Electrochemical Heteroepitaxial Growth of Chalcogenide Semiconductors from Solutions

1996 ◽  
Vol 451 ◽  
Author(s):  
D. Lincot ◽  
M. J. Furlong ◽  
M. Froment ◽  
R. Cortes ◽  
M. C. Bernard
Keyword(s):  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Basic Principles ◽  
Lattice Match ◽  
X Ray ◽  
Chalcogenide Semiconductors ◽  
Influence Of Temperature On ◽  
Deposition Processes ◽  
A Site ◽  
Site Selective

ABSTRACTChalcogenide semiconductors have been deposited epitaxially from aqueous solutions either chemically or electrochemically at growth rates of up to 0.7 μmhr−1. After recalling the basic principles of these deposition processes, results are presented concerning chemically deposited CdS on InP, GaP and CuInSe2 substrates, electrodeposited CdTe on InP, and CdSAnP heterostructures. Characterisation of these structures by RHEED, TEM, HRTEM, and glazing angle X ray diffraction allows to analyse the effects of substrate orientation, polarity, lattice match plus the influence of temperature on epitaxial growth. These results are discussed in terms of self organisation and a site selective growth mechanisms due to the free enegy of formation of each compound.

scholarly journals Crystal Structure Refinements of Four Monazite Samples from Different Localities

Minerals ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1028 ◽  
Author(s):  
M. Mashrur Zaman ◽  
Sytle M. Antao
Keyword(s):  
Crystal Structure ◽  
Electron Probe ◽  
Unit Cell Volume ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Unit Cell Parameters ◽  
X Ray ◽  
Cell Parameters ◽  
Large Unit Cell ◽  
A Site

This study investigates the crystal chemistry of monazite (APO4, where A = Lanthanides = Ln, as well as Y, Th, U, Ca, and Pb) based on four samples from different localities using single-crystal X-ray diffraction and electron-probe microanalysis. The crystal structure of all four samples are well refined, as indicated by their refinement statistics. Relatively large unit-cell parameters (a = 6.7640(5), b = 6.9850(4), c = 6.4500(3) Å, β = 103.584(2)°, and V = 296.22(3) Å3) are obtained for a detrital monazite-Ce from Cox’s Bazar, Bangladesh. Sm-rich monazite from Gunnison County, Colorado, USA, has smaller unit-cell parameters (a = 6.7010(4), b = 6.9080(4), c = 6.4300(4) Å, β = 103.817(3)°, and V = 289.04(3) Å3). The a, b, and c unit-cell parameters vary linearly with the unit-cell volume, V. The change in the a parameter is large (0.2 Å) and is related to the type of cations occupying the A site. The average <A-O> distances vary linearly with V, whereas the average <P-O> distances are nearly constant because the PO4 group is a rigid tetrahedron.

Phase Diagram of the W-doped Pb(Zn1/3Nb2/3)O3–BaTiO3– PbTiO3 System Around a Morphotropic Phase Boundary Composition

2002 ◽  
Vol 17 (5) ◽  
pp. 1085-1091 ◽  
Author(s):  
W. Z. Zhu ◽  
M. Yan ◽  
A. L. Kholkin ◽  
P. Q. Mantas ◽  
J. L. Baptista
Keyword(s):  
High Temperature ◽  
Phase Boundary ◽  
Morphotropic Phase Boundary ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical Neutrality ◽  
Phase Boundary Composition ◽  
A Site ◽  
Successive Phase

The morphotropic phase boundary (MPB) composition that is characterized by the coexistence of rhombohedral and tetragonal phases in the Pb(Zn1/3Nb2/3)O3–BaTiO3– PbTiO3 system was modified by W-doping at the B site of a perovskite structural block. To maintain the electrical neutrality, creation of A-site vacancies was intentionally introduced in the formulation of the examined compositions. Incorporation of W ions was revealed to stabilize the tetragonal phase against the rhombohedral one, shifting the MPB toward the PZN-rich end at room temperature. High-temperature x-ray diffraction examination in combination with dielectric measurements discloses two successive phase transitions as a sample is cooled from high temperature, namely, paraelectric cubic to ferroelectric rhombohedral followed by ferroelectric rhombohedral to ferroelectric tetragonal. W addition appears to suppress the first transition while promoting the second one.

Quaternary intermetallics RE2Pt3Ga4In (RE=Y, Gd-Tm) – intergrowth structures of NdRh2Sn4 and TiNiSi related slabs

2020 ◽  
Vol 235 (4-5) ◽  
pp. 117-125
Author(s):  
Myroslava Horiacha ◽  
Maximilian K. Reimann ◽  
Jutta Kösters ◽  
Vasyl‘ I. Zaremba ◽  
Rainer Pöttgen
Keyword(s):  
Single Crystals ◽  
High Frequency ◽  
Magnetic Moments ◽  
Intermetallic Phases ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Arc Melting ◽  
Intergrowth Structures ◽  
A Site

AbstractThe quaternary gallium-rich intermetallic phases RE2Pt3Ga4In with RE = Y and Gd-Tm were synthesized by arc-melting of the elements and subsequent annealing. Small single crystals were obtained by high-frequency annealing of the samples in sealed tantalum ampoules. The polycrystalline samples were characterized through their X-ray powder patterns. The RE2Pt3Ga4In phases crystallize with a site ordering variant of the orthorhombic Y2Rh3Sn5 type, space group Cmc 21. The structures of Gd2Pt3Ga4In, Dy2Pt3Ga4.14In0.86, Er2Pt3Ga4.17In0.83 and Tm2Pt3Ga4.21In0.79 were refined from single-crystal X-ray diffraction data. The single crystals reveal small homogeneity ranges RE2Pt3Ga4±xIn1±x. The striking geometrical structural building units are slightly distorted trigonal prisms around the three crystallographically independent platinum atoms: Pt1@RE4Ga2, Pt2@RE2Ga4 and Pt3@RE2Ga2In2. Based on these prismatic building units, the RE2Pt3Ga4In structures can be described as intergrowth variants of TiNiSi and NdRh2Sn4 related structural slabs. Temperature dependent magnetic susceptibility studies of Gd2Pt3Ga4In and Tb2Pt3Ga4In show Curie-Weiss behavior and the experimental magnetic moments confirm stable trivalent gadolinium respectively terbium. Gd2Pt3Ga4In and Tb2Pt3Ga4In order antiferromagnetically at TN = 15.8(1) and 26.0(1) K. Magnetization curves at 3 K show field-induced spin reorientations.

Heteroepitaxial Growth of Ba0.5Sr0.5TiO3/SrRuO3 on YSZ/Si by Off-Axis Sputtering

1994 ◽  
Vol 361 ◽  
Author(s):  
S.Y. Hou ◽  
J. Kwo ◽  
R.K. Watts ◽  
J.-Y. Cheng ◽  
R.J. Cava ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Degree Of Crystallinity ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Dielectric Constant And Loss ◽  
Bst Films ◽  
High Degree ◽  
Room Temperature Dielectric Constant

ABSTRACTWe demonstrate an epitaxial heterostructure of Ba0.5Sr0.5 TiO3/SrRuO3/YSZ on Si for potential charge storage applications. The dielectric Ba0.5Sr0.5TiO3 (BST) and conductive oxide SrRuO3 are both grown (110) oriented on YSZ (100) buffered Si by 90° off-axis sputtering. These films showed a high degree of crystallinity with minimal interdiffusion at the interfaces as examined by X-ray diffraction, Rutherford backscattering spectroscopy, and cross-section transmission electron microscopy. The in-plane epitaxial alignment of the films is BST/SRO 〈111〉 // YSZ 〈110〉 with a four-fold degeneracy. The dielectric constant and loss tangent of the epi-BST films are 360 and 0.01 at 10 kHz. The leakage current density is < 4×10∼−7 A/cm2 at 1 V. The room temperature dielectric constant (ε) of the BST films shows a roll-off in the 1–10 MHz range. This is attributed to the existence of a series resistance in the measurement circuit, which likely arises from the SrRuO3 electrode.

The crystal and molecular stucture of μ-Bis(diphenylarsino)methanehexacarbonyldi-μ-chloro-dirhenium(I)-n-hexane (4/1)

1975 ◽  
Vol 28 (6) ◽  
pp. 1201 ◽  
Author(s):  
CJ Commons ◽  
BF Hoskins
Keyword(s):  
Least Squares Method ◽  
Crystal And Molecular Structure ◽  
Three Dimensional ◽  
X Ray Diffraction ◽  
Rhenium Atom ◽  
X Ray ◽  
Carbonyl Ligands ◽  
Rhenium Complex ◽  
Metal Atoms ◽  
A Site

The crystal and molecular structure of the n-hexane solvate of μ- bis(diphenylarsino)methane-hexacarbonyldi-μ-chloro-dirhenium(I), Re2(CO)6(Ph2AsCH2AsPh2)Cl2, has been determined by three-dimensional X-ray diffraction methods. The complex crystallizes in the space group Pī with a 15.763(1), b 19.077(1), c 12.233(1) Ǻ and α 88.745(10), β 110.506(5), γ 92.900(6)�. The structure was solved by conventional Patterson and Fourier methods and refined by a block-diagonal least- squares method to R and Rw of 0.045 and 0.054, respectively, for 7061 independent statistically significant reflections collected by counter methods. The crystal consists of discrete molecules of the complex and n-hexane held together by van der Waals forces. There are two molecules of the dirhenium complex in the crystallographic asymmetric unit with the n-hexane molecule situated about a site of symmetry ī. The binuclear rhenium complex contains bridging halogen atoms and a bridging diarsine ligand. Three carbonyl ligands are also bonded to each rhenium atom, giving the metal atoms approximately octahedral environments. The average Re-As, Re-Cl, and Re-C bond lengths are 2.58, 2.52, and 1.89 Ǻ respectively.

Low Temperature Formation of β-SiC by C60Deposition on Silicon

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
High Vacuum ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Growth Defects ◽  
Atomic Force ◽  
Deposition Parameters ◽  
Mean Size ◽  
Sic Films

ABSTRACTBy deposition of C60 on silicon at moderate temperatures (800°C … 900°C) the formation of thin epitaxial β-SiC-films on Si could be proved. C60 -molecules were deposited onto Si(001) and Si(111) in high-vacuum at constant deposition rates for some hours. The thickness and the composition of the formed layers are determined by Rutherford-Backscattering (RBS). The thickness of the layers varied between about 50nm and 200nm in dependence of the deposition parameters. From the shape of the RBS-spectra only β-SiC can be identified. SiC-grains with a mean size of about 500 nm have been observed by atomic force microscopy (AFM). X-ray diffraction (XRD) pole figure measurements demonstrate the heteroepitaxial growth of β-SiC on Si It can be shown by XRD that only the cubic structure (β-SiC) of the different polytypes of SiC was formed during the carbonization process. The formation of growth defects (twins) can be observed.

Phase Structure of (La,Mg,Nd)5Ni19 Hydrogen Storage Alloy

2013 ◽  
Vol 455 ◽  
pp. 66-70
Author(s):  
Qiang He ◽  
Yong Quan Guo ◽  
Zhen Zhen Zheng
Keyword(s):  
Hydrogen Storage ◽  
Structural Unit ◽  
Type Structure ◽  
Hydrogen Storage Alloy ◽  
X Ray Diffraction ◽  
Hydrogen Storage Alloys ◽  
Lattice Match ◽  
X Ray ◽  
Good Lattice ◽  
Three Phases

The crystal structure of (La,Mg,Nd)5Ni19alloy has been investigated using powder x-ray diffraction. A Rietveld refinement is used to determine the phase structures for tying to find out the correlations of lattices among the phases in this hydrogen storage alloy. The results show that the alloy consists of three phases, which correspond to (La,Mg)3Nd2Ni19with a Pr5Co19-type structure, La (Mg,Nd)Ni7phase with a Ce2Ni7-type structure and (La,Mg)3Nd2Ni19with a Ce5Co19-type structure. Mg and Nd substitute for La atom at the 4f position for Pr5Co19-type and Ce2Ni7-type structures and the 6c position for Ce5Co19-type structure, respectively. It induces a good lattice match along the a-axisand b-axis among the three phases. The three kinds of structures might form a rod-like shape structural unit by stacking along the c-axis. This phase constitution seems to be beneficial for the cyclic stability of the hydrogen storage alloys.

scholarly journals Structural Characterization of Heteroepitaxial Growth of AlxGa1-xSb/GaSb by LPE

2014 ◽  
Vol 70 (a1) ◽  
pp. C1795-C1795
Author(s):  
Primavera Lopez ◽  
Javier Martinez ◽  
Gabriel Juarez ◽  
Joel Diaz
Keyword(s):  
Liquid Phase ◽  
Aluminum Content ◽  
Reciprocal Space ◽  
Diffraction Maximum ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Crystallographic Tilt

The heteroepitaxial AlxGa1-xSb/GaSb (001) growth with different x aluminum content, from 0.05 to 0.2 prepared by Liquid Phase Epitaxy (LPE) is presented. The interest in this study is due to the layers of AlxGa1-xSb systems should be well matched for fabrication of sources and detectors operating in the 1.3-1.6 micron range. The layered structure obtained was characterized mainly by high-resolution X-ray diffraction and reciprocal space mapping. In the case of x = 0.05 aluminum content, the relaxation is minimal, and almost without deviation respect to GaSb. As the aluminum content increases above 0.05, the relaxation is larger and deviation from GaSb substrate too. Crystallographic tilt is detected by a shift of layer diffraction maximum on reciprocal space maps. Deviation changes the intensity of layer respect to substrate peak in rocking curves and hence the estimation of thickness of layer obtained from them. A correction for estimated thickness of layers is obtained from mapping.

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