Growth of Thin Epitaxial Silicon Layers on Heavily Doped Substrates by RTP-CVD

1989 ◽  
Vol 146 ◽  
Author(s):  
S. K. Lee ◽  
Y. H. Ku ◽  
D. L. Kwong
Keyword(s):  
Structural Integrity ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Epitaxial Silicon ◽  
Feature Size ◽  
Silicon Epitaxy ◽  
Continuous Scale ◽  
Scale Down ◽  
Heavily Doped ◽  
Low Thermal Budget

ABSTRACTSilicon epitaxy plays an important role in improving the performance and reliability of semiconductor devices. The continuous scale-down in device feature size demands a low thermal budget epitaxial technique to maintain the structural integrity of processed devices. In this paper, rapid thermal processing chemical vapor deposition (RTP-CVD) has been used to deposit high quality, thin silicon epitaxial films with superior thickness control. Parameters affecting the quality and rate of epitaxial growth are discussed.

Remote Plasma-Enhanced Chemical Vapor Deposition of Epitaxial Silicon on Silicon (100) at 150°C

1989 ◽  
Vol 165 ◽  
Author(s):  
T. Hsu ◽  
B. Anthony ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Silicon Epitaxy

AbstractLow temperature processing will be an essential requirement for the device sizes, structures, and materials being considered for future integrated circuit applications. In particular, low temperature silicon epitaxy will be required for new devices and technologies utilizing three-dimensional epitaxial structures and silicon-based heterostructures. A novel technique, Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD), has achieved epitaxial silicon films at a temperature as low as 150°C which is believed to be the lowest temperature to date for silicon epitaxy. The process relies on a stringent ex-situ preparation procedure, a controlled wafer loading sequence, and an in-situ remote hydrogen plasma clean of the sample surface, all of which provide a surface free of carbon, oxygen, and other contaminants. The system is constructed using ultra-high vacuum technology (10-10 Torr) to achieve and maintain contaminantion-free surfaces and films. Plasma excitation of argon is used in lieu of thermal energy to provide energetic species that dissociate silane and affect surface chemical processes. Excellent crystallinity is observed from the thin films grown at 150°C using the analytical techniques of Transmission Electron Microscopy (TEM) and Nomarski interference contrast microscopy after defect etching.

Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

2006 ◽  
Vol 910 ◽  
Author(s):  
Charles W. Teplin ◽  
Matthew Page ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert M. Ready ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Film Interface

AbstractWe grow epitaxial silicon films onto (100) silicon wafers from pure silane by hot-wire chemical vapor deposition (HWCVD). The films grow epitaxially for a thickness hepi before a Si:H cones nucleate and expand. We study the dependence of hepi on growth rate and the differences between Ta and W filaments. The surface morphology of thin but completely epitaxial films are studied in order to correlate the surface roughness during growth with the eventual epitaxial breakdown thickness. Surface roughness, strain and H at the wafer/film interface are not likely to cause the observed breakdown.

Cross-Sectional TEM Investigation of Low-Temperature Epitaxial Silicon Films Grown by Ultra-Low Pressure CVD

1986 ◽  
Vol 75 ◽  
Author(s):  
T. R. Yew ◽  
J. H. Comfort ◽  
L. M. Garverick ◽  
W. R. Burger ◽  
R. Reif
Keyword(s):  
Dislocation Density ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Epitaxial Silicon ◽  
Cross Sectional ◽  
Dislocation Densities ◽  
Pressure Chemical

AbstractIn this paper, cross-sectional TEM is used to investigate the quality of silicon epitaxial films grown by ultra-low pressure chemical vapor deposition at 750°C. The dislocation density and epi.- substrate interface width were investigated for different predeposition Argon sputter cleaning condltions. Epitaxial films with dislocation densities of less than 10 cm−2 and interfacial width of about 13 Å were obtained.

In-situ Observation of Silicon Epitaxy Breakdown with Real-Time Spectroscopic Ellipsometry

2004 ◽  
Vol 808 ◽  
Author(s):  
Charles W. Teplin ◽  
Dean H. Levi ◽  
Qi Wang ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
...  
Keyword(s):  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Chemical Vapor ◽  
In Situ Observation ◽  
Epitaxial Silicon ◽  
Silicon Epitaxy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Hydrogenated Amorphous

ABSTRACTWe use in-situ real-time spectroscopic ellipsometry to observe the breakdown of silicon epitaxy during growth by hot-wire chemical vapor deposition (HWCVD) on Si (100) substrates. Representative data is presented for the two types of epitaxy breakdown that we have observed: 1) an immediate transition to hydrogenated amorphous silicon (a-Si:H), and 2) a slower transition where a-Si:H cones nucleate and grow until they eclipse further epitaxial growth. Simple models, consistent with transmission-electron and atomic-force micrographs, describe the evolution of both types of breakdown showing that real-time spectroscopic ellipsometry is a useful tool for monitoring the growth of epitaxial silicon.

Demonstration of Multiprocessing by Silicon Epitaxy Following In-Situ Cleaning

1991 ◽  
Vol 224 ◽  
Author(s):  
Pushkar P. Apte ◽  
Ramnath Venkatraman ◽  
Krishna C. Saraswat ◽  
Mehrdad M. Moslehi ◽  
Richard Yeakley
Keyword(s):  
Semiconductor Manufacturing ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Crystal Silicon ◽  
Silicon Epitaxy ◽  
Anhydrous Hydrogen Fluoride ◽  
Manufacturing Techniques ◽  
Specific Manifestation ◽  
Low Thermal Budget

AbstractConventional semiconductor manufacturing techniques may be unable to meet technological demands in certain cases, and alternatives need to be investigated. We propose in situ sequential processing, which we define as ‘multiprocessing’, as a possible innovation. We demonstrate a specific manifestation of multiprocessing, namely the integration of a novel in situ pre-clean using anhydrous hydrogen fluoride with chemical vapor deposition of silicon, leading to the growth of high-quality single-crystal silicon epitaxy. Further, we show that the multiprocessing technology is viable for manufacturing, since it is simple, rapid, has a low thermal budget and does not suffer from cross-contamination. Finally, we discuss the possible role of multiprocessing in semiconductor manufacturing.

Incorporation of oxygen and chlorine atoms into low‐temperature (850 °C) silicon epitaxial films by chemical vapor deposition

1995 ◽  
Vol 66 (21) ◽  
pp. 2867-2869 ◽  
Author(s):  
Akihiro Miyauchi ◽  
Kazuhiro Ueda ◽  
Yousuke Inoue ◽  
Takaya Suzuki ◽  
Yoshinori Imai
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Chlorine Atoms

Properties of Si1 − x − y Ge x  C  y Epitaxial Films Grown by Ultrahigh Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 146 (12) ◽  
pp. 4611-4618 ◽  
Author(s):  
S. John ◽  
E. J. Quinones ◽  
B. Ferguson ◽  
S. K. Ray ◽  
B. Anantharam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Films
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