Cross-Sectional TEM Investigation of Low-Temperature Epitaxial Silicon Films Grown by Ultra-Low Pressure CVD

1986 ◽  
Vol 75 ◽  
Author(s):  
T. R. Yew ◽  
J. H. Comfort ◽  
L. M. Garverick ◽  
W. R. Burger ◽  
R. Reif
Keyword(s):  
Dislocation Density ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Epitaxial Silicon ◽  
Cross Sectional ◽  
Dislocation Densities ◽  
Pressure Chemical

AbstractIn this paper, cross-sectional TEM is used to investigate the quality of silicon epitaxial films grown by ultra-low pressure chemical vapor deposition at 750°C. The dislocation density and epi.- substrate interface width were investigated for different predeposition Argon sputter cleaning condltions. Epitaxial films with dislocation densities of less than 10 cm−2 and interfacial width of about 13 Å were obtained.

Low-pressure chemical vapor deposition of GaN epitaxial films

1998 ◽  
Vol 189-190 ◽  
pp. 330-334 ◽  
Author(s):  
M Topf ◽  
G Steude ◽  
S Fischer ◽  
W Kriegseis ◽  
I Dirnstorfer ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Pressure Chemical

Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition

2006 ◽  
Vol 508 (1-2) ◽  
pp. 14-19 ◽  
Author(s):  
Oluwamuyiwa O. Olubuyide ◽  
David T. Danielson ◽  
Lionel C. Kimerling ◽  
Judy L. Hoyt
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Seed Layer ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Material Quality ◽  
Pressure Chemical
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