High Barrier Height MIS Diodes on n-InP Using Pd, Ni and Au on a Chemical Oxide

1988 ◽  
Vol 144 ◽  
Author(s):  
Y. S. Lee ◽  
W. A. Anderson
Keyword(s):  
Refractive Index ◽  
Barrier Height ◽  
Mixed Oxide ◽  
Interface State ◽  
Saturation Current ◽  
Saturation Current Density ◽  
Reverse Saturation Current ◽  
Recombination Current ◽  
Straight Lines ◽  
Current Mechanism

ABSTRACTMIS diodes were fabricated using Pd, Ni and Au- contacts on n-InP covered by a 40 Å chemically-grown oxide. The oxide had a refractive index of 1.4–1.6 with a composition of mainly In2O3 + some InPO3 near the surface and mixed oxide + InP near the interface. Pd-devices gave the highest barrigr height of 0.80 eV and lowest reverse saturation current density of 3×10−8A/cm2. I-V-T and C-V-T data gave temperature dependence of barrier height and revealed an interface state recombination current mechanism. Richardson plots gave good straight lines when empirically corrected using øB/n instead of just øB.

Effects of Surface and Bulk Defects in InP

1987 ◽  
Vol 104 ◽  
Author(s):  
C. Warren ◽  
K. Reinhardt ◽  
A. Singh ◽  
Y. S. Lee ◽  
W. A. Anderson
Keyword(s):  
Refractive Index ◽  
Chemical Structure ◽  
Oxide Growth ◽  
Saturation Current ◽  
Oxide Formation ◽  
Metal Insulator ◽  
Native Oxides ◽  
Saturation Current Density ◽  
Reverse Saturation Current ◽  
Mis Structures

ABSTRACTUndoped, n-type InP has been studied utilizing Au-oxide- InP metal-insulator-semiconductor (MIS) structures. Processing variations have included oxide growth techniques, and annealing of grown oxides. Annealing of the devices in N2 or N2 :H2 after oxide formation has reduced reverse saturation current density by up to a factor of 10 and increased barrier height from 0.45 to 0.65 eV. Annealing of the oxide increases refractive index due possibly to a densification or changed chemical structure. ESCA data reveals thin native oxides to be InP04 whereas thermally grown ones also contain P2 05 and In2 03. DLTS data reveals a dominant defect 597 meV below the conduction band.

Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12νm Range

1999 ◽  
Vol 607 ◽  
Author(s):  
L. Bürkle ◽  
F. Fuchs ◽  
R. Kiefer ◽  
W. Pletschen ◽  
R. E. Sah ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Cutoff Wavelength ◽  
Saturation Current ◽  
Diffusion Limited ◽  
Saturation Current Density ◽  
Out Of Plane ◽  
Reverse Saturation Current ◽  
The Magnetic Field ◽  
Diode Current

AbstractInAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 8.711μm show adynamic impedance of R0A= 1.5 kωcm2at 77 K and a responsivity of 2 A/W, corresponding to a detectivity of D*= 1 x 1012 cmv√Hz/W. Diffusion limited performance is observed above 100 K. At lower temperatures the diodesare limited by generation-recombination currents. An analysis of the influence of different diode sidewall passivations on the surface contribution to the diode leakage current is presented. The out-of-plane electron mobility as well as the relative contributions of the electron and hole diffusion currents to the diode current were determined by a measurement of the magnetic field dependence of the reverse saturation current density of the diodes

Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach

2012 ◽  
Vol 106 ◽  
pp. 76-79 ◽  
Author(s):  
Jens Müller ◽  
Karsten Bothe ◽  
Sandra Herlufsen ◽  
Helge Hannebauer ◽  
Rafel Ferré ◽  
...  
Keyword(s):  
Current Density ◽  
Saturation Current ◽  
Saturation Current Density ◽  
Current Density Imaging ◽  
Reverse Saturation Current

scholarly journals Temperature-dependent device properties of γ-CuI and β-Ga2O3 heterojunctions

2021 ◽  
Vol 3 (10) ◽  
Author(s):  
Rama Venkata Krishna Rao ◽  
Ajinkya K. Ranade ◽  
Pradeep Desai ◽  
Golap Kalita ◽  
Hiroo Suzuki ◽  
...  
Keyword(s):  
Barrier Height ◽  
Saturation Current ◽  
Copper Iodide ◽  
Temperature Dependent ◽  
Electrical Hysteresis ◽  
Current Voltage ◽  
Heterojunction Device ◽  
Reverse Saturation Current ◽  
Barrier Inhomogeneity ◽  
P Type

Abstract Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperature-dependent device characteristics of the p-type γ-copper iodide (γ-CuI)/n-type β-gallium oxide (β‐Ga2O3) heterojunctions, thereby revealing their interface properties. The fabricated γ-CuI/β-Ga2O3 heterojunction showed excellent diode characteristics with a high rectification ratio and low reverse saturation current at 298 K in the presence of a large barrier height (0.632 eV). The temperature-dependent device characteristics were studied in the temperature range 273–473 K to investigate the heterojunction interface. With an increase in temperature, a gradual decrease in the ideality factor and an increase in the barrier height were observed, indicating barrier inhomogeneity at the heterojunction interface. Furthermore, the current–voltage measurement showed electrical hysteresis for the reverse saturation current, although it was not observed for the forward bias current. The presence of electrical hysteresis for the reverse saturation current and of the barrier inhomogeneity in the temperature-dependent characteristics indicates the presence of some level of interface states for the γ-CuI/β‐Ga2O3 heterojunction device. Thus, our study showed that the electrical hysteresis can be correlated with temperature-dependent electrical characteristics of the β‐Ga2O3-based heterojunction device, which signifies the presence of surface defects and interface states. Article Highlights We revealed the interface properties of p-type γ-copper iodide (γ-CuI) and n-type β-gallium oxide (β-Ga2O3) heterojunction. The developed heterostructure showed a large barrier height (0.632 eV) at the interface, which is stable at a temperature as high as 473 K. We confirmed the current transport mechanism at the interface of the heterojunction by analyzing the temperature dependent current–voltage characterization. Graphic abstract

scholarly journals Synthesis, Crystallography, Microstructure, Crystal Defects, Optical and Optoelectronic Properties of ZnO:CeO2 Mixed Oxide Thin Films

Photonics ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 112
Author(s):  
Qais M. Al-Bataineh ◽  
Mahmoud Telfah ◽  
Ahmad A. Ahmad ◽  
Ahmad M. Alsaad ◽  
Issam A. Qattan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Mixed Oxide ◽  
Visible Region ◽  
Functional Materials ◽  
Crystal Defects ◽  
Optoelectronic Properties ◽  
Oxide Thin Films ◽  
Pure Ceo2

We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.

Atmospheric TIG Arc Diagnostics with a Low Disturbance Electrostatic Probe

2013 ◽  
Vol 652-654 ◽  
pp. 2239-2243
Author(s):  
Yuan Bo Li ◽  
Liang Zhu
Keyword(s):  
Current Density ◽  
Longitudinal Direction ◽  
Axial Direction ◽  
Half Width ◽  
Arc Plasma ◽  
Plasma Diagnostic ◽  
Saturation Current ◽  
Sweeping Motion ◽  
Saturation Current Density ◽  
Electrostatic Probe

The use of electrostatic probe is available and simple in atmospheric TIG arc plasma diagnostic. Usually electrostatic probe takes disturbance in arc plasma due to sweeping motion. A low disturbance electrostatic probe was developed. This probe consisted of aluminum wire and moved through arc plasma along probe’s longitudinal direction to avoid sweeping motion. And the signal collected by this probe required Abel inversion to convert into the value per 1 mm probe length. With the application of the low disturbance probe in biased condition, ion saturation current density in various sections along the axial direction of TIG arc was obtained. The result shows that half width and peak value of ion saturation current density increase with the enhance of arc current; the radius of current-carrying area can be estimated by the half width of ion saturation current density; along the axial direction of TIG arc, the radius of current-carrying area change to the minimum near cathode.

scholarly journals Effect of the gas puff location on the divertor plasma properties in COMPASS tokamak

2020 ◽  
Vol 1492 (1) ◽  
pp. 012003
Author(s):  
M Dimitrova ◽  
M Tomes ◽  
Tsv Popov ◽  
R Dejarnac ◽  
J Stockel ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Vacuum Chamber ◽  
Plasma Potential ◽  
Saturation Current ◽  
Langmuir Probes ◽  
Plasma Parameters ◽  
Plasma Properties ◽  
Low Field ◽  
Saturation Current Density ◽  
Deuterium Gas

Abstract Langmuir probes are used to study the plasma parameters in the divertor during deuterium gas puff injection on the high- (HFS) or low-field sides (LFS). The probe data were processed to evaluate the plasma potential and the electron temperatures and densities. A difference was found in the plasma parameters depending on the gas puff location. In the case of a gas puff on the LFS, the plasma parameters changed vastly, mainly in the inner divertor – the plasma potential, the ion saturation-current density and the electron temperature dropped. After the gas puff, the electron temperature changed from 10-15 eV down to within the 5-9 eV range. As a result, the parallel heat-flux density decreased. At the same time, in the outer divertor the plasma parameters remained the same. We thus concluded that using a gas puff on the LFS will facilitate reaching a detachment regime by increasing the density of puffed neutrals. When the deuterium gas puff was on the HFS, the plasma parameters in the divertor region remained almost the same before and during the puff. The electron temperature decreased with just few eV as a result of the increased amount of gas in the vacuum chamber.

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