Effects of Surface and Bulk Defects in InP

1987 ◽  
Vol 104 ◽  
Author(s):  
C. Warren ◽  
K. Reinhardt ◽  
A. Singh ◽  
Y. S. Lee ◽  
W. A. Anderson
Keyword(s):  
Refractive Index ◽  
Chemical Structure ◽  
Oxide Growth ◽  
Saturation Current ◽  
Oxide Formation ◽  
Metal Insulator ◽  
Native Oxides ◽  
Saturation Current Density ◽  
Reverse Saturation Current ◽  
Mis Structures

ABSTRACTUndoped, n-type InP has been studied utilizing Au-oxide- InP metal-insulator-semiconductor (MIS) structures. Processing variations have included oxide growth techniques, and annealing of grown oxides. Annealing of the devices in N2 or N2 :H2 after oxide formation has reduced reverse saturation current density by up to a factor of 10 and increased barrier height from 0.45 to 0.65 eV. Annealing of the oxide increases refractive index due possibly to a densification or changed chemical structure. ESCA data reveals thin native oxides to be InP04 whereas thermally grown ones also contain P2 05 and In2 03. DLTS data reveals a dominant defect 597 meV below the conduction band.

High Barrier Height MIS Diodes on n-InP Using Pd, Ni and Au on a Chemical Oxide

1988 ◽  
Vol 144 ◽  
Author(s):  
Y. S. Lee ◽  
W. A. Anderson
Keyword(s):  
Refractive Index ◽  
Barrier Height ◽  
Mixed Oxide ◽  
Interface State ◽  
Saturation Current ◽  
Saturation Current Density ◽  
Reverse Saturation Current ◽  
Recombination Current ◽  
Straight Lines ◽  
Current Mechanism

ABSTRACTMIS diodes were fabricated using Pd, Ni and Au- contacts on n-InP covered by a 40 Å chemically-grown oxide. The oxide had a refractive index of 1.4–1.6 with a composition of mainly In2O3 + some InPO3 near the surface and mixed oxide + InP near the interface. Pd-devices gave the highest barrigr height of 0.80 eV and lowest reverse saturation current density of 3×10−8A/cm2. I-V-T and C-V-T data gave temperature dependence of barrier height and revealed an interface state recombination current mechanism. Richardson plots gave good straight lines when empirically corrected using øB/n instead of just øB.

Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12νm Range

1999 ◽  
Vol 607 ◽  
Author(s):  
L. Bürkle ◽  
F. Fuchs ◽  
R. Kiefer ◽  
W. Pletschen ◽  
R. E. Sah ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Cutoff Wavelength ◽  
Saturation Current ◽  
Diffusion Limited ◽  
Saturation Current Density ◽  
Out Of Plane ◽  
Reverse Saturation Current ◽  
The Magnetic Field ◽  
Diode Current

AbstractInAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 8.711μm show adynamic impedance of R0A= 1.5 kωcm2at 77 K and a responsivity of 2 A/W, corresponding to a detectivity of D*= 1 x 1012 cmv√Hz/W. Diffusion limited performance is observed above 100 K. At lower temperatures the diodesare limited by generation-recombination currents. An analysis of the influence of different diode sidewall passivations on the surface contribution to the diode leakage current is presented. The out-of-plane electron mobility as well as the relative contributions of the electron and hole diffusion currents to the diode current were determined by a measurement of the magnetic field dependence of the reverse saturation current density of the diodes

Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach

2012 ◽  
Vol 106 ◽  
pp. 76-79 ◽  
Author(s):  
Jens Müller ◽  
Karsten Bothe ◽  
Sandra Herlufsen ◽  
Helge Hannebauer ◽  
Rafel Ferré ◽  
...  
Keyword(s):  
Current Density ◽  
Saturation Current ◽  
Saturation Current Density ◽  
Current Density Imaging ◽  
Reverse Saturation Current

scholarly journals Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Soonil Lee ◽  
Li Ji ◽  
Alex C. De Palma ◽  
Edward T. Yu
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Water Oxidation ◽  
Metal Catalyst ◽  
Saturation Current ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Onset Potential ◽  
Solar Water Splitting ◽  
Saturation Current Density

AbstractMetal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p+n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm2 under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm2 is maintained at 1.3 V versus RHE for 7 days.

scholarly journals Low-cost, scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

2021 ◽  
Author(s):  
Soonil Lee ◽  
Li Ji ◽  
Edward Yu
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Low Cost ◽  
Metal Catalyst ◽  
Saturation Current ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Onset Potential ◽  
Solar Water Splitting ◽  
Saturation Current Density

Abstract Metal-insulator-semiconductor (MIS) structures have been widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yielded MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p+n-Si buried junction, further improved oxygen evolution reaction (OER) performance was achieved with an onset potential of 0.7 V versus RHE and saturation current density of 32 mA/cm2. Moreover, in stability testing in 1M KOH aqueous solution, a constant photocurrent density of ~ 22 mA/cm2 was maintained at 1.3 V versus RHE for 7 days.

Atmospheric TIG Arc Diagnostics with a Low Disturbance Electrostatic Probe

2013 ◽  
Vol 652-654 ◽  
pp. 2239-2243
Author(s):  
Yuan Bo Li ◽  
Liang Zhu
Keyword(s):  
Current Density ◽  
Longitudinal Direction ◽  
Axial Direction ◽  
Half Width ◽  
Arc Plasma ◽  
Plasma Diagnostic ◽  
Saturation Current ◽  
Sweeping Motion ◽  
Saturation Current Density ◽  
Electrostatic Probe

The use of electrostatic probe is available and simple in atmospheric TIG arc plasma diagnostic. Usually electrostatic probe takes disturbance in arc plasma due to sweeping motion. A low disturbance electrostatic probe was developed. This probe consisted of aluminum wire and moved through arc plasma along probe’s longitudinal direction to avoid sweeping motion. And the signal collected by this probe required Abel inversion to convert into the value per 1 mm probe length. With the application of the low disturbance probe in biased condition, ion saturation current density in various sections along the axial direction of TIG arc was obtained. The result shows that half width and peak value of ion saturation current density increase with the enhance of arc current; the radius of current-carrying area can be estimated by the half width of ion saturation current density; along the axial direction of TIG arc, the radius of current-carrying area change to the minimum near cathode.

Influence of Hydrogen Plasma Treatment Upon Native Oxides Plasma Grown on INP

1992 ◽  
Vol 284 ◽  
Author(s):  
E. D. Belyakova ◽  
S. V. Belyakov ◽  
L. S. Berman ◽  
A. T. Gorelenok ◽  
I. N. Karimov ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Negative Charge ◽  
Hydrogen Plasma ◽  
Flat Band ◽  
Band Shift ◽  
Native Oxides ◽  
Effective Oxide Charge ◽  
Reduced Density ◽  
Density Of Interface States ◽  
Mis Structures

Investigations of plasma grown native oxides on indium phosphide carried out recently [1,2] have shown that these oxides exhibit properties which are promising to be used in MIS structures on InP, due to their stable composition which includes [InxPyOz]n polyphosphate phase mainly and due to reduced density of interface states (Nss<1011 eV−1 cm−2). It has been shown also that MIS structures with plasma native oxides exhibit C-V characteristics shifted towards positive values of voltage bias. The flat band shift is assigned to a negative charge injected into oxide film during plasma oxidation. The presence of this negative charge in plasma grown native oxides on InP may cause instability of electric properties of MIS structures [2].The aim of this work was to make an attempt to influence upon negative effective oxide charge density by means of hydrogen plasma treatment.

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