Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12νm Range

1999 ◽  
Vol 607 ◽  
Author(s):  
L. Bürkle ◽  
F. Fuchs ◽  
R. Kiefer ◽  
W. Pletschen ◽  
R. E. Sah ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Cutoff Wavelength ◽  
Saturation Current ◽  
Diffusion Limited ◽  
Saturation Current Density ◽  
Out Of Plane ◽  
Reverse Saturation Current ◽  
The Magnetic Field ◽  
Diode Current

AbstractInAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 8.711μm show adynamic impedance of R0A= 1.5 kωcm2at 77 K and a responsivity of 2 A/W, corresponding to a detectivity of D*= 1 x 1012 cmv√Hz/W. Diffusion limited performance is observed above 100 K. At lower temperatures the diodesare limited by generation-recombination currents. An analysis of the influence of different diode sidewall passivations on the surface contribution to the diode leakage current is presented. The out-of-plane electron mobility as well as the relative contributions of the electron and hole diffusion currents to the diode current were determined by a measurement of the magnetic field dependence of the reverse saturation current density of the diodes

Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach

2012 ◽  
Vol 106 ◽  
pp. 76-79 ◽  
Author(s):  
Jens Müller ◽  
Karsten Bothe ◽  
Sandra Herlufsen ◽  
Helge Hannebauer ◽  
Rafel Ferré ◽  
...  
Keyword(s):  
Current Density ◽  
Saturation Current ◽  
Saturation Current Density ◽  
Current Density Imaging ◽  
Reverse Saturation Current

Effects of Surface and Bulk Defects in InP

1987 ◽  
Vol 104 ◽  
Author(s):  
C. Warren ◽  
K. Reinhardt ◽  
A. Singh ◽  
Y. S. Lee ◽  
W. A. Anderson
Keyword(s):  
Refractive Index ◽  
Chemical Structure ◽  
Oxide Growth ◽  
Saturation Current ◽  
Oxide Formation ◽  
Metal Insulator ◽  
Native Oxides ◽  
Saturation Current Density ◽  
Reverse Saturation Current ◽  
Mis Structures

ABSTRACTUndoped, n-type InP has been studied utilizing Au-oxide- InP metal-insulator-semiconductor (MIS) structures. Processing variations have included oxide growth techniques, and annealing of grown oxides. Annealing of the devices in N2 or N2 :H2 after oxide formation has reduced reverse saturation current density by up to a factor of 10 and increased barrier height from 0.45 to 0.65 eV. Annealing of the oxide increases refractive index due possibly to a densification or changed chemical structure. ESCA data reveals thin native oxides to be InP04 whereas thermally grown ones also contain P2 05 and In2 03. DLTS data reveals a dominant defect 597 meV below the conduction band.

scholarly journals Magneto-Optical Characterization of Trions in Symmetric InP-Based Quantum Dots for Quantum Communication Applications

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 942
Author(s):  
Wojciech Rudno-Rudziński ◽  
Marek Burakowski ◽  
Johann P. Reithmaier ◽  
Anna Musiał ◽  
Mohamed Benyoucef
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Molecular Beam ◽  
Optical Parameters ◽  
Single Spin ◽  
Single Carrier ◽  
Out Of Plane ◽  
The Magnetic Field ◽  
G Factors

Magneto-optical parameters of trions in novel large and symmetric InP-based quantum dots, uncommon for molecular beam epitaxy-grown nanostructures, with emission in the third telecom window, are measured in Voigt and Faraday configurations of an external magnetic field. The diamagnetic coefficients are found to be in the range of 1.5–4 μeV/T2, and 8–15 μeV/T2, respectively out-of-plane and in-plane of the dots. The determined values of diamagnetic shifts are related to the anisotropy of dot sizes. Trion g-factors are measured to be relatively small, in the range of 0.3–0.7 and 0.5–1.3, in both configurations, respectively. Analysis of single carrier g-factors, based on the formalism of spin-correlated orbital currents, leads to similar values for hole and electron of ~0.25 for Voigt and ge ≈ −5; gh ≈ +6 for Faraday configuration of the magnetic field. Values of g-factors close to zero measured in Voigt configuration make the investigated dots promising for electrical tuning of the g-factor sign, required for schemes of single spin control in qubit applications.

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

2009 ◽  
Vol 615-617 ◽  
pp. 715-718 ◽  
Author(s):  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Robin L. Kelley ◽  
David C. Sheridan
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Large Area ◽  
Enhancement Mode ◽  
High Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

High Barrier Height MIS Diodes on n-InP Using Pd, Ni and Au on a Chemical Oxide

1988 ◽  
Vol 144 ◽  
Author(s):  
Y. S. Lee ◽  
W. A. Anderson
Keyword(s):  
Refractive Index ◽  
Barrier Height ◽  
Mixed Oxide ◽  
Interface State ◽  
Saturation Current ◽  
Saturation Current Density ◽  
Reverse Saturation Current ◽  
Recombination Current ◽  
Straight Lines ◽  
Current Mechanism

ABSTRACTMIS diodes were fabricated using Pd, Ni and Au- contacts on n-InP covered by a 40 Å chemically-grown oxide. The oxide had a refractive index of 1.4–1.6 with a composition of mainly In2O3 + some InPO3 near the surface and mixed oxide + InP near the interface. Pd-devices gave the highest barrigr height of 0.80 eV and lowest reverse saturation current density of 3×10−8A/cm2. I-V-T and C-V-T data gave temperature dependence of barrier height and revealed an interface state recombination current mechanism. Richardson plots gave good straight lines when empirically corrected using øB/n instead of just øB.

scholarly journals Electrical Characterization of Hybrid Halide Perovskites Based Heteroj unction Device -=SUP=-*-=/SUP=-

2019 ◽  
Vol 53 (4) ◽  
pp. 501
Author(s):  
Jyoti Chaudhary ◽  
Shaily Choudhary ◽  
Chandra Mohan Singh Negi ◽  
Saral K. Gupta ◽  
Ajay Singh Verma
Keyword(s):  
Carrier Lifetime ◽  
Electrical Characterization ◽  
Aluminum Electrode ◽  
Saturation Current ◽  
Spectroscopy Analysis ◽  
Junction Resistance ◽  
Current Voltage ◽  
Halide Perovskites ◽  
Lower Voltage

AbstractHerein, we have measured the mobility of Hole’s for the configuration FTO/TiO_2/CH_3NH_3PbBr_3/PEDOT:PSS/Al by the SCLC regime. The current–voltage ( I – V ) characteristics of the CH_3NH_3PbBr_3 perovskite based device shows the rectifying behavior as Schottky diode. Different parameters of the proposed device such as saturation current, ideality factor, barrier height have been taken out from I – V characteristics. The highest Hole’s mobility from TiO_2 thin film through the perovskite and PEDOT:PSS film to the top aluminum electrode has of order 1.59 × 10^–4 cm^2 V^–1 s^–1. Moreover, the proposed device shows the TFSCLC regime at lower voltage while, at higher voltages it shows the TCLC regime. In addition to this, some important parameters like junction resistance, capacitance and carrier lifetime of device can be measured by the spectroscopy analysis of impedance.

Optimization of Multilayered Bi-2223/Ag-Au Conductors for Current Lead Applications

1999 ◽  
Vol 13 (09n10) ◽  
pp. 1357-1362 ◽  
Author(s):  
L. Martini ◽  
F. Barberis ◽  
R. Berti ◽  
L. Bigoni ◽  
F. Curcio ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Gold Alloy ◽  
Electrical Characterization ◽  
Field Profile ◽  
The Third ◽  
Magnetic Field Profile ◽  
Composite Conductors ◽  
Current Leads ◽  
The Magnetic Field

Multilayered Bi-2223 composite conductors fabricated by means of the "Accordion folding" method appear to be suitable for applications as current leads (CL). In this work, we report on the results of electrical characterization of silver-gold alloy sheathed Bi-2223 conductors up to 400 mm long, having a DC overall critical current density J c eng exceeding 3000 A/cm2 at 77 K. The I c evolution from the first to the third thermal treatment as well as the uniformity along the specimen lenght has been monitored. Lastly, calculations of the magnetic field profile across stacked multilayered Bi-2223 conductors are reported and discussed.

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