Organometallic Vapor Phase Epitaxial Growth of ZnGeAs2 and (ZnGeAs2)xGe1−x on GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
G. S. Solomon ◽  
J. B. Posthill ◽  
M. L. Timmons
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Lattice Constant ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Lattice Mismatch ◽  
Chalcopyrite Structure ◽  
Zinc Blende ◽  
Indirect Band Gap ◽  
Zinc Blende Structure

ABSTRACTEpitaxial single crystal (001) chalcopyrite-structure ZnGeAs2 and single crystal (100) zinc blende-structure (ZnGeAs2)xGe1−x alloys have been grown by organometallic vapor phase epitaxy on (100) GaAs. Selected area electron diffraction was used to determine the crystal structure for several Zn:Ge molar flow ratios. Bulk chemical composition was determined by electron microprobe and correlated to crystal lattice constants obtained from x-ray diffraction. Due to the lattice mismatch between chalcopyrite-structure ZnGeAs2 and the GaAs substrate, the epitaxy is elastically strained, compressing the a-lattice constant and elongating the c-lattice constant. Optical absorption and transmission spectroscopy indicate the zinc-blende-structure material has an indirect band gap of approximately 0.6 eV, whereas the chalcopyrite ZnGeAs2 has a direct band gap of 1.15 eV. Secondary ion mass spectroscopy reveals significant Zn diffusion into the GaAs substrate if the Zn:Ge molar flow ratio exceeds the ratio required for stoichiometric chalcopyrite-structure crystal growth.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

Evidence of Forbidden Reflections in the Diffuse Scattering of Hg0.80Cd0.20Te Single Crystals

1990 ◽  
Vol 209 ◽  
Author(s):  
J. P. Quintana
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Diffuse Scattering ◽  
Anomalous Dispersion ◽  
Scattering Pattern ◽  
X Ray ◽  
Zinc Blende ◽  
Zinc Blende Structure

ABSTRACTThe x-ray diffuse scattering pattern from a commercial bulk n-type Hg0.80Cd0.20Te single crystal was measured in absolute units. Anomalous dispersion techniques near the Hg LIII edge were used to determine theintensity due to Hg interactions. Diffuse x-ray superlattice reflections are reported that are forbidden by the zinc-blende structure. The systematic absences in these peaks eliminate the possibility that they are the result of a Cu3Au ordering scheme.

Temperature-dependent optical band gap of the metastable zinc-blende structure β-GaN

1994 ◽  
Vol 50 (12) ◽  
pp. 8433-8438 ◽  
Author(s):  
G. Ramírez-Flores ◽  
H. Navarro-Contreras ◽  
A. Lastras-Martínez ◽  
R. C. Powell ◽  
J. E. Greene
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Temperature Dependent ◽  
Zinc Blende ◽  
Zinc Blende Structure

X-Ray Diffraction Analysis of Heteroepitaxial Cd1-yZnyTe on GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
S. M. Johnson ◽  
W. L. Ahlgren ◽  
M. T. Smith ◽  
B. C. Johnston ◽  
S. Sen
Keyword(s):  
Plastic Deformation ◽  
High Resolution ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Lattice Mismatch ◽  
Tilt Boundary ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray

ABSTRACTX-ray diffraction techniques were used to evaluate Cd1-yZnyTe grown on GaAs substrate orientations of {100}2°, {111}, {012}, and {123}. High-quality layers having compositions at or close to the CdTe and ZnTe binary end points can be grown on GaAs, but most of the ternary compositions have extremely broad rocking curves. Layers grown on {123} and {012} were found to have large tilts toward {111} about <121> that varied systematically with the lattice mismatch; this is consistent with the mismatch being accommodated by the formation of a low-angle tilt boundary at the interface. {111} layers were found to be twinned, and thus {100}2° and {123} appear to better suited for vapor-phase epitaxial growth (VPE). High-resolution x-ray diffractometer measurements showed that the lattice mismatch is almost entirely taken up by plastic deformation, and only a small tetragonal distortion was measured. CdTe was distorted more than ZnTe, and a greater distortion was measured for layers grown on {100}2° than on {111}, in agreement with estimates made using bulk elastic constants.

scholarly journals First Principle Investigation of Electronic, Transport, and Bulk Properties of Zinc-Blende Magnesium Sulfide

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1791
Author(s):  
Uttam Bhandari ◽  
Blaise Awola Ayirizia ◽  
Yuriy Malozovsky ◽  
Lashounda Franklin ◽  
Diola Bagayoko
Keyword(s):  
Band Gap ◽  
Lattice Constant ◽  
Density Functional ◽  
Local Density ◽  
Computational Method ◽  
Physical Content ◽  
Conduction Bands ◽  
Zinc Blende ◽  
Densities Of States ◽  
Magnesium Sulfide

We have studied electronic, structural, and transport properties of zinc-blende magnesium sulfide (zb-MgS). We employed a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) method. Our computational method is able to reach the ground state of a material, as dictated by the second theorem of density functional theory (DFT). Consequently, our findings have the physical content of DFT and agree with available, corresponding experimental ones. The calculated band gap of zb-MgS, a direct gap equal to 4.43 eV, obtained at the experimental lattice constant of 5.620 Å, completely agrees with the experimental band gap of 4.45 ± 0.2 eV. We also report total (DOS) and partial (pDOS) densities of states, electron and hole effective masses, the equilibrium lattice constant, and the bulk modulus. The calculated pDOS also agree with the experiment for the description of the states at the top and the bottom of the valence and conduction bands, respectively.

Raman Scattering and Photoluminescence of Spontaneously Ordered Ga0.5In0.5P Alloy

1996 ◽  
Vol 452 ◽  
Author(s):  
G. H. Li ◽  
Z. X. Liu ◽  
H. X. Han ◽  
Z. P. Wang ◽  
J. R. Dong ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Band Gap ◽  
Room Temperature ◽  
Band Gaps ◽  
Photoluminescence Spectra ◽  
Zinc Blende ◽  
Gaas Substrates ◽  
Ordered Alloys ◽  
Direct Band ◽  
Zinc Blende Structure

AbstractSamples of the spontaneously ordered Ga0.5In0.5P alloys were grown by the MOCVD method on [001]-oriented GaAs substrates. The thickness of the epitaxal layer is about 2 μm. Raman scattering and photoluminescence spectra have been measured at room temperature. The result from photoluminescence measurement indicates that the direct-band gaps of the spontaneously ordered samples are lower than that of the disordered sample. Three scattering peaks have been observed in the Raman spectra, corresponding to the GaP-like LO, InP-like LO and InP-like TO modes in the alloys, respectively. The frequencies of the GaP- and InP-like LO modes increase with the decrease of the band-gap of the ordered alloys. It is related to the formation of the (GaP)1/(InP)1 monolayer superlattice along [111] direction in the ordered alloys. The polarization properties of the ordered alloys are similar to those of the bulk III-V semiconductors with the zinc-blende structure.

Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN

2013 ◽  
Vol 87 (19) ◽  
Author(s):  
M. Landmann ◽  
E. Rauls ◽  
W. G. Schmidt ◽  
Marcus Röppischer ◽  
Christoph Cobet ◽  
...  
Keyword(s):  
Band Gap ◽  
Transition Energies ◽  
Zinc Blende ◽  
Gap Crossing ◽  
Indirect Band Gap
Sign in / Sign up

Export Citation Format

Share Document