Analytical descriptions of the band structure of direct-band-gap zinc-blende-structure semiconductors in thek⋅pKane model

1991 ◽  
Vol 44 (15) ◽  
pp. 7993-7998 ◽  
Author(s):  
H.-J. Drouhin ◽  
J. Peretti
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Direct Band Gap ◽  
Zinc Blende ◽  
Direct Band ◽  
Zinc Blende Structure

Band structure of indium oxide: Indirect versus direct band gap

2007 ◽  
Vol 75 (15) ◽  
Author(s):  
Paul Erhart ◽  
Andreas Klein ◽  
Russell G. Egdell ◽  
Karsten Albe
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Indium Oxide ◽  
Direct Band Gap ◽  
Direct Band

S-Vacancy induced indirect-to-direct band gap transition in multilayer MoS2

2020 ◽  
Vol 22 (44) ◽  
pp. 26005-26014
Author(s):  
Bingyu Zhu ◽  
Junyu Lang ◽  
Yun Hang Hu
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band

Two-dimensional (2D) MoS2 has a tunable band structure.

Raman Scattering and Photoluminescence of Spontaneously Ordered Ga0.5In0.5P Alloy

1996 ◽  
Vol 452 ◽  
Author(s):  
G. H. Li ◽  
Z. X. Liu ◽  
H. X. Han ◽  
Z. P. Wang ◽  
J. R. Dong ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Band Gap ◽  
Room Temperature ◽  
Band Gaps ◽  
Photoluminescence Spectra ◽  
Zinc Blende ◽  
Gaas Substrates ◽  
Ordered Alloys ◽  
Direct Band ◽  
Zinc Blende Structure

AbstractSamples of the spontaneously ordered Ga0.5In0.5P alloys were grown by the MOCVD method on [001]-oriented GaAs substrates. The thickness of the epitaxal layer is about 2 μm. Raman scattering and photoluminescence spectra have been measured at room temperature. The result from photoluminescence measurement indicates that the direct-band gaps of the spontaneously ordered samples are lower than that of the disordered sample. Three scattering peaks have been observed in the Raman spectra, corresponding to the GaP-like LO, InP-like LO and InP-like TO modes in the alloys, respectively. The frequencies of the GaP- and InP-like LO modes increase with the decrease of the band-gap of the ordered alloys. It is related to the formation of the (GaP)1/(InP)1 monolayer superlattice along [111] direction in the ordered alloys. The polarization properties of the ordered alloys are similar to those of the bulk III-V semiconductors with the zinc-blende structure.

Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors

2010 ◽  
Vol 82 (20) ◽  
Author(s):  
Yoon-Suk Kim ◽  
Martijn Marsman ◽  
Georg Kresse ◽  
Fabien Tran ◽  
Peter Blaha
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Effective Mass ◽  
Direct Band Gap ◽  
Direct Band

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

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