scholarly journals First Principle Investigation of Electronic, Transport, and Bulk Properties of Zinc-Blende Magnesium Sulfide

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1791
Author(s):  
Uttam Bhandari ◽  
Blaise Awola Ayirizia ◽  
Yuriy Malozovsky ◽  
Lashounda Franklin ◽  
Diola Bagayoko
Keyword(s):  
Band Gap ◽  
Lattice Constant ◽  
Density Functional ◽  
Local Density ◽  
Computational Method ◽  
Physical Content ◽  
Conduction Bands ◽  
Zinc Blende ◽  
Densities Of States ◽  
Magnesium Sulfide

We have studied electronic, structural, and transport properties of zinc-blende magnesium sulfide (zb-MgS). We employed a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) method. Our computational method is able to reach the ground state of a material, as dictated by the second theorem of density functional theory (DFT). Consequently, our findings have the physical content of DFT and agree with available, corresponding experimental ones. The calculated band gap of zb-MgS, a direct gap equal to 4.43 eV, obtained at the experimental lattice constant of 5.620 Å, completely agrees with the experimental band gap of 4.45 ± 0.2 eV. We also report total (DOS) and partial (pDOS) densities of states, electron and hole effective masses, the equilibrium lattice constant, and the bulk modulus. The calculated pDOS also agree with the experiment for the description of the states at the top and the bottom of the valence and conduction bands, respectively.

scholarly journals Ground State Properties of the Wide Band Gap Semiconductor Beryllium Sulfide (BeS)

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 6128
Author(s):  
Blaise A. Ayirizia ◽  
Janee’ S. Brumfield ◽  
Yuriy Malozovsky ◽  
Diola Bagayoko
Keyword(s):  
Band Gap ◽  
Lattice Constant ◽  
Ground State ◽  
Density Functional ◽  
Local Density ◽  
Wide Band ◽  
Electronic Energy ◽  
Computational Method ◽  
Energy Bands ◽  
Ground State Properties

We report the results from self-consistent calculations of electronic, transport, and bulk properties of beryllium sulfide (BeS) in the zinc-blende phase, and employed an ab-initio local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). We obtained the ground state properties of zb-BeS with the Bagayoko, Zhao, and Williams (BZW) computational method, as enhanced by Ekuma and Franklin (BZW-EF). Our findings include the electronic energy bands, the total (DOS) and partial (pDOS) densities of states, electron and hole effective masses, the equilibrium lattice constant, and the bulk modulus. The calculated band structure clearly shows that zb-BeS has an indirect energy band gap of 5.436 eV, from Γ to a point between Γ and X, for an experimental lattice constant of 4.863 Å. This is in excellent agreement with the experiment, unlike the findings of more than 15 previous density functional theory (DFT) calculations that did not perform the generalized minimization of the energy functional, required by the second DFT theorem, which is inherent to the implementation of our BZW-EF method.

scholarly journals First principles calculations on theoretical band gap improvement of IIIA-VA zinc-blende semiconductor InAs

2020 ◽  
Vol 31 (12) ◽  
pp. 2050178
Author(s):  
Waqas Mahmood ◽  
Arfan Bukhtiar ◽  
Muhammad Haroon ◽  
Bing Dong
Keyword(s):  
Band Gap ◽  
Density Functional ◽  
Local Density ◽  
Lattice Parameter ◽  
First Principles Calculations ◽  
Functional Theory ◽  
Zinc Blende ◽  
Valence States ◽  
Direct Band ◽  
Experimental Findings

The structural, electronic, dielectric and vibrational properties of zinc-blende (ZB) InAs were studied within the framework of density functional theory (DFT) by employing local density approximation and norm-conserving pseudopotentials. The optimal lattice parameter, direct band gap, static dielectric constant, phonon frequencies and Born effective charges calculated by treating In-4d electrons as valence states are in satisfactory agreement with other reported theoretical and experimental findings. The calculated band gap is reasonably accurate and improved in comparison to other findings. This work will be useful for more computational studies related to semiconductor devices.

First-principles investigation of the structural, elastic, electronic, and optical properties of semiconducting AgBr1–xIx (0 ≤ x ≤ 1) ternary alloys in rock-salt and zinc blende structures

2020 ◽  
Vol 98 (9) ◽  
pp. 834-848
Author(s):  
H. Rekab-Djabri ◽  
Mohamed Drief ◽  
Manal M. Abdus Salam ◽  
Salah Daoud ◽  
F. El Haj Hassan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Rock Salt ◽  
Density Functional ◽  
Local Density ◽  
Ternary Alloys ◽  
Full Potential ◽  
Zinc Blende ◽  
Lmto Method ◽  
Direct Band

In this work, first principle calculations of the structural, electronic, elastic, and optical properties of novel AgBr1–xIx ternary alloys in rock-salt (B1) and zinc-blende (B3) structures are presented. The calculations were performed using the full-potential linear muffin-tin orbital (FP-LMTO) method within the framework of the density functional theory (DFT). The exchange and correlation potentials were treated according to the local density approximation (LDA). The lattice constants for the B1 and B3 phases versus iodide concentration (x) were found to deviate slightly from the linear relationship of Vegard’s law. The calculated electronic properties showed that AgBr1–xIx alloys in the B3 structure have a direct band gap (Γ – Γ) for all concentrations of x, which means that they can be used in long-wavelength optoelectronic applications, while in the B1 structure they have an indirect (Γ – R) band gap. The elastic constants Cij, shear modulus G, Young’s modulus E, Poisson’s ratio ν, index of ductility B/G, sound velocities vt, vl, and vm, and Debye temperature θD were also reported and analyzed. By incorporating the basic optical properties, we discussed the dielectric function, refractive index, optical reflectivity, absorption coefficient, and optical conductivity in terms of incident photon energy up to 13.5 eV. The present results were found to be in good agreement with the available experimental and other theoretical results.

scholarly journals Effect of Hartree–Fock pseudopotentials on local density functional theory calculations

2018 ◽  
Vol 20 (27) ◽  
pp. 18844-18849 ◽  
Author(s):  
Hengxin Tan ◽  
Yuanchang Li ◽  
S. B. Zhang ◽  
Wenhui Duan
Keyword(s):  
Density Functional Theory ◽  
Band Gap ◽  
Density Functional ◽  
Local Density ◽  
Density Functional Theory Calculations ◽  
Optimal Choice ◽  
Functional Theory ◽  
Hartree Fock ◽  
Local Density Functional Theory ◽  
Local Density Functional

Optimal choice of the element-specific pseudopotential improves the band gap.

Laplacian free and asymptotic corrected semilocal exchange potential applied to the band gap of solids

2019 ◽  
Vol 21 (35) ◽  
pp. 19639-19650 ◽  
Author(s):  
Abhilash Patra ◽  
Subrata Jana ◽  
Hemanadhan Myneni ◽  
Prasanjit Samal
Keyword(s):  
Density Functional Theory ◽  
Band Gap ◽  
Density Functional ◽  
Local Density ◽  
Exchange Potential ◽  
Functional Theory ◽  
Type Semiconductor ◽  
Local Density Functional Theory ◽  
Local Density Functional

Improved band gap of n-type semiconductor ZrS2 within semi-local density functional theory is shown. The band gap of mBR-TBMBJ agrees well with the hybrid HSE06 functional.

Structural Electronic and Optical Properties of MgO, CaO and SrO Binary Compounds: Comparison Study

2016 ◽  
Vol 257 ◽  
pp. 123-126 ◽  
Author(s):  
Salima Labidi ◽  
Jazia Zeroual ◽  
Malika Labidi ◽  
Kalthoum Klaa ◽  
Rachid Bensalem
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Density Functional ◽  
Local Density ◽  
Alternative Form ◽  
Full Potential ◽  
Generalized Gradient ◽  
Electronic And Optical Properties ◽  
Optical Dielectric Constant ◽  
Reported Data

First-principles calculations for electronic and optical properties under pressure effect of MgO, SrO and CaO compounds in the cubic structure, using a full relativistic version of the full-potential augmented plane-wave (FP-LAPW) method based on density functional theory, within the local density approximation (LDA) and the generalized gradient approximation (GGA), have been reported. Furthermore, band structure calculations have been investigated by the alternative form of GGA proposed by Engel and Vosko (GGA-EV) and modified by Becke-Johnson exchange correlation potential (MBJ-GGA). All calculated equilibrium lattices, bulk modulus and band gap at zero pressure are find in good agreement with the available reported data. The pressure dependence of band gap and the static optical dielectric constant are also investigated in this work.

ELECTRONIC STRUCTURE OF THE CRYSTALLINE SILICON/n-FOLD SiO2 RING INTERFACE

1996 ◽  
Vol 03 (03) ◽  
pp. 1403-1407
Author(s):  
V.G. ZAVODINSKY ◽  
I.A. KUYANOV
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Crystalline Silicon ◽  
Local Density ◽  
Free Particle ◽  
Silicon Cluster ◽  
Surface Band ◽  
Densities Of States ◽  
Interfacial States ◽  
Surface Changes

Using the ab initio local density approach we have studied the electronic structure of the systems consisting of the six-, four- and three-fold planar SiO 2 rings placed upon the surface of the silicon cluster. The interaction of the six- and four-fold rings with the silicon surface changes the electronic structure of the silica particle very weakly and the surface insulator band gap of 7–8 eV remains in their densities of states. The electronic structure of the three-fold planar ring undergoes a significant reconstruction. Its surface band gap is 3.7 eV instead of 7.6 eV for the free particle case. Two groups of the interfacial states were found inside the silicon semiconductor band gap.

ELASTIC, ELECTRONIC AND THERMODYNAMIC PROPERTIES OF Rh3X(X = Zr, Nb and Ta) INTERMETALLIC COMPOUNDS

2014 ◽  
Vol 28 (03) ◽  
pp. 1450006 ◽  
Author(s):  
M. OULD KADA ◽  
T. SEDDIK ◽  
A. SAYEDE ◽  
R. KHENATA ◽  
A. BOUHEMADOU ◽  
...  
Keyword(s):  
Thermodynamic Properties ◽  
Intermetallic Compounds ◽  
Density Functional ◽  
High Pressures ◽  
Local Density ◽  
Generalized Gradient ◽  
Charge Densities ◽  
Densities Of States ◽  
Bonding Properties ◽  
Experimental Values

Structural, electronic, elastic and thermodynamic properties of Rh 3 X ( X = Zr , Nb , Ta ) intermetallic compounds are investigated in the framework of density functional theory (DFT). The exchange-correlation (XC) potential is treated with the generalized gradient approximation (GGA) and local density approximation (LDA). The computed ground state properties agree well with the available theoretical and experimental values. The elastic constants are obtained by calculating the total energy versus volume conserving strains using Mehl model. The electronic and bonding properties are discussed from the calculations of band structures (BSs), densities of states and electron charge densities. The volume and bulk modulus at high pressure and temperature are investigated. Additionally, thermodynamic properties such as the heat capacity, thermal expansion and Debye temperature at high pressures and temperatures are also analyzed.

Electronic Band Structure of Cubic Silicon Carbide Nanowires

2008 ◽  
Vol 600-603 ◽  
pp. 575-578 ◽  
Author(s):  
A. Miranda ◽  
A. Estrella Ramos ◽  
M. Cruz Irisson
Keyword(s):  
Silicon Carbide ◽  
Band Structure ◽  
Band Gap ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Local Density ◽  
Thickness Variation ◽  
Hydrogen Atoms ◽  
Electronic Band ◽  
Cubic Silicon Carbide

In this work, the effects of the diameter and morphology on the electronic band structure of hydrogenated cubic silicon carbide (b-SiC) nanowires is studied by using a semiempirical sp3s* tight-binding (TB) approach applied to the supercell model, where the Si- and C-dangling bonds on the surface are passivated by hydrogen atoms. Moreover, TB results (for the bulk) are compared with density functional calculations in the local density approximation. The results show that though surface morphology modifies the band gap, the change is more systematic with the thickness variation. As expected, hydrogen saturation induces a broadening of the band gap energy because of the quantum confinement effect.

THE PROBLEM OF THE BAND GAP IN LDA CALCULATIONS

2007 ◽  
Vol 14 (03) ◽  
pp. 481-487 ◽  
Author(s):  
I. N. YAKOVKIN ◽  
P. A. DOWBEN
Keyword(s):  
Density Functional Theory ◽  
Band Structure ◽  
Band Gap ◽  
Local Density Approximation ◽  
Density Functional ◽  
Local Density ◽  
Fine Tuning ◽  
Density Approximation ◽  
Functional Theory ◽  
Basic Physics

In calculating band structure, the local density approximation and density functional theory are widely popular and do reproduce a lot of the basic physics. Regrettably, without some fine tuning, the local density approximation and density functional theory do not generally get the details of the experimental band structure correct, in particular the band gap in semiconductors and insulators is generally found to be too small when compared with experiment. For experimentalists using commercial packages to calculate the electronic structure of materials, some caution is indicated, as some long-standing problems exist with the local density approximation and density functional theory.

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