Characterization of III-V Semiconductor Structures Using Electron Beam Electroreflectance (EBER) spectroscopy.

1988 ◽  
Vol 144 ◽  
Author(s):  
M. H. Herman ◽  
I. D. Ward ◽  
S. E. Buttrill ◽  
G. L. Francke
Keyword(s):  
Electron Beam ◽  
Quantum Well ◽  
Quantum Wells ◽  
Sample Surface ◽  
Band Gap Energy ◽  
Quantum Well Structures ◽  
Resonant States

ABSTRACTEBER is a form of modulated reflectance spectroscopy in which a low energy electron beam alters the sample surface potential. For III-V semiconductors, the spectra are characteristic of electroreflectance, including excitonic, interband, and impurity transitions. The study of these transitions provides accurate estimations of band gaps in bulk and thick film samples. Measurements of the band gap energy in compounds such as AlxGa1-xAs provide highly precise evaluations of their composition.Additionally, EBER spectra of quantum well structures and heterojunctions provide useful information about the composition and quality of materials and interfaces. For quantum wells, detected features suggest the presence of allowed, disallowed, and resonant states. In EBER spectra of HEMT structures, peaks are apparent resulting from transitions between the valence band and the states in which the electrons are confined. We present examples of EBER determination of AlGaAs composition, single GaAs/AlGaAs quantum well evaluation, and HEMT characterization.

Quantum Confinement Stark Effect of Different Gainnas Quantum Well Structures

2013 ◽  
Vol 773 ◽  
pp. 622-627
Author(s):  
Ying Ning Qiu ◽  
Wei Sheng Lu ◽  
Stephane Calvez
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
External Electric Field ◽  
Quantum Confinement ◽  
Stark Effect ◽  
Band Gap Energy ◽  
Electron Effective Mass ◽  
Coupled Quantum Wells ◽  
Quantum Well Structures

The quantum confinement Stark effect of three types of GaInNAs quantum wells, namely single square quantum well, stepped quantum wells and coupled quantum wells, is investigated using the band anti-crossing model. The comparison between experimental observation and modeling result validate the modeling process. The effects of the external electric field and localized N states on the quantized energy shifts of these three structures are compared and analyzed. The external electric field applied to the QW not only changes the potential profile but also modulates the localized N states, which causes band gap energy shifts and increase of electron effective mass.

Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

2011 ◽  
Vol 19 (2) ◽  
Author(s):  
M. Motyka ◽  
F. Janiak ◽  
K. Ryczko ◽  
G. Sęk ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Gas Sensing ◽  
Infrared Emission ◽  
Infrared Range ◽  
Type Ii ◽  
Mid Infrared ◽  
Quantum Well Structures ◽  
Gasb Layer ◽  
Resonant States

AbstractModulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap ‘W’-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3–4 μm for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.

Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy

1985 ◽  
Vol 46 (1) ◽  
pp. 51-53 ◽  
Author(s):  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
C. W. Litton ◽  
P. W. Yu ◽  
Jasprit Singh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

1992 ◽  
Vol 263 ◽  
Author(s):  
D.W. Greve ◽  
R. Misra ◽  
M.A. Capano ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Small Variation ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
High Quality ◽  
Quantum Well Structures ◽  
X Ray

ABSTRACTWe report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

Determination of the local Al concentration in AlxGa1−xAs‐GaAs quantum well structures using the (200) diffraction intensity obtained with a 10 Å electron beam

1989 ◽  
Vol 54 (15) ◽  
pp. 1454-1456 ◽  
Author(s):  
H.‐J. Ou ◽  
S.‐C. Y. Tsen ◽  
K. T. Tsen ◽  
J. M. Cowley ◽  
J. I. Chyi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Quantum Well ◽  
Diffraction Intensity ◽  
Quantum Well Structures

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structures

1993 ◽  
Vol 73 (12) ◽  
pp. 8489-8494 ◽  
Author(s):  
J. M. Zavada ◽  
F. Voillot ◽  
N. Lauret ◽  
R. G. Wilson ◽  
B. Theys
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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