Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy

1985 ◽  
Vol 46 (1) ◽  
pp. 51-53 ◽  
Author(s):  
D. C. Reynolds ◽  
K. K. Bajaj ◽  
C. W. Litton ◽  
P. W. Yu ◽  
Jasprit Singh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Characterization of III-V Semiconductor Structures Using Electron Beam Electroreflectance (EBER) spectroscopy.

1988 ◽  
Vol 144 ◽  
Author(s):  
M. H. Herman ◽  
I. D. Ward ◽  
S. E. Buttrill ◽  
G. L. Francke
Keyword(s):  
Electron Beam ◽  
Quantum Well ◽  
Quantum Wells ◽  
Sample Surface ◽  
Band Gap Energy ◽  
Quantum Well Structures ◽  
Resonant States

ABSTRACTEBER is a form of modulated reflectance spectroscopy in which a low energy electron beam alters the sample surface potential. For III-V semiconductors, the spectra are characteristic of electroreflectance, including excitonic, interband, and impurity transitions. The study of these transitions provides accurate estimations of band gaps in bulk and thick film samples. Measurements of the band gap energy in compounds such as AlxGa1-xAs provide highly precise evaluations of their composition.Additionally, EBER spectra of quantum well structures and heterojunctions provide useful information about the composition and quality of materials and interfaces. For quantum wells, detected features suggest the presence of allowed, disallowed, and resonant states. In EBER spectra of HEMT structures, peaks are apparent resulting from transitions between the valence band and the states in which the electrons are confined. We present examples of EBER determination of AlGaAs composition, single GaAs/AlGaAs quantum well evaluation, and HEMT characterization.

Optical Properties of MBE Grown Cubic AlGaN Epilayers and AlGaN/GaN Quantum Well Structures

2000 ◽  
Vol 639 ◽  
Author(s):  
D.J. As ◽  
T. Frey ◽  
M. Bartels ◽  
A. Khartchenko ◽  
D. Schikora ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Linear Increase ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
Al Content ◽  
Frequency Plasma ◽  
Multi Quantum Well

ABSTRACTCubic AlyGa1−yN/GaN heterostructures on GaAs(001) substrates were grown by radio-frequency plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction, spectroscopic ellipsometry and cathodoluminescence were used to characterize the structural and optical properties of the alloy epilayers. X-ray diffraction reciprocal space maps demonstrate the good crystal quality of the cubic AlyGa1−yN films. Both SE as well as room temperature CL of the AlyGa1−yN epilayer show a linear increase of the band gap with increasing Al-content. A pseudomorphically strained cubic 10 × (2.4 nm GaN/ 4.8 nm Al0.12Ga0.88N) multi-quantum well (MQW) structure has been realized. Cathodoluminescence clearly demonstrates strong radiative recombination due to quantized states in the GaN well layer at a photon energy of 3.323 eV.

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Sign in / Sign up

Export Citation Format

Share Document