Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures

2005 ◽  
Vol 23 (1) ◽  
pp. 61 ◽  
Author(s):  
O. Douhéret ◽  
S. Bonsels ◽  
S. Anand
Keyword(s):  
Atomic Force Microscopy ◽  
Quantum Well ◽  
Spatial Resolution ◽  
Electrical Characterization ◽  
Quantum Well Structures ◽  
Force Microscopy ◽  
Characterization Techniques ◽  
Atomic Force

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

High-Spatial-Resolution Topographic Imaging and Dimer Distance Analysis of Si(100)-(2×1) Using Noncontact Atomic Force Microscopy

2008 ◽  
Vol 47 (7) ◽  
pp. 6085-6087 ◽  
Author(s):  
Daisuke Sawada ◽  
Takashi Namikawa ◽  
Masuhiro Hiragaki ◽  
Yoshiaki Sugimoto ◽  
Masayuki Abe ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Force Microscopy ◽  
Distance Analysis ◽  
Atomic Force ◽  
Topographic Imaging

Force dependences for the definition of the atomic force microscopy spatial resolution

1988 ◽  
Vol 132 (6-7) ◽  
pp. 354-358 ◽  
Author(s):  
Yu.N. Moiseev ◽  
V.M. Mostepanenko ◽  
V.I. Panov ◽  
I.Yu. Sokolov
Keyword(s):  
Atomic Force Microscopy ◽  
Spatial Resolution ◽  
Force Microscopy ◽  
Atomic Force ◽  
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