Determination of the local Al concentration in AlxGa1−xAs‐GaAs quantum well structures using the (200) diffraction intensity obtained with a 10 Å electron beam

1989 ◽  
Vol 54 (15) ◽  
pp. 1454-1456 ◽  
Author(s):  
H.‐J. Ou ◽  
S.‐C. Y. Tsen ◽  
K. T. Tsen ◽  
J. M. Cowley ◽  
J. I. Chyi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Quantum Well ◽  
Diffraction Intensity ◽  
Quantum Well Structures

Characterization of III-V Semiconductor Structures Using Electron Beam Electroreflectance (EBER) spectroscopy.

1988 ◽  
Vol 144 ◽  
Author(s):  
M. H. Herman ◽  
I. D. Ward ◽  
S. E. Buttrill ◽  
G. L. Francke
Keyword(s):  
Electron Beam ◽  
Quantum Well ◽  
Quantum Wells ◽  
Sample Surface ◽  
Band Gap Energy ◽  
Quantum Well Structures ◽  
Resonant States

ABSTRACTEBER is a form of modulated reflectance spectroscopy in which a low energy electron beam alters the sample surface potential. For III-V semiconductors, the spectra are characteristic of electroreflectance, including excitonic, interband, and impurity transitions. The study of these transitions provides accurate estimations of band gaps in bulk and thick film samples. Measurements of the band gap energy in compounds such as AlxGa1-xAs provide highly precise evaluations of their composition.Additionally, EBER spectra of quantum well structures and heterojunctions provide useful information about the composition and quality of materials and interfaces. For quantum wells, detected features suggest the presence of allowed, disallowed, and resonant states. In EBER spectra of HEMT structures, peaks are apparent resulting from transitions between the valence band and the states in which the electrons are confined. We present examples of EBER determination of AlGaAs composition, single GaAs/AlGaAs quantum well evaluation, and HEMT characterization.

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Determination of spontaneous emission quantum efficiency in InGaAs/GaAs quantum well structures

2007 ◽  
Author(s):  
Ding Ding ◽  
Shane R. Johnson ◽  
Jiang-Bo Wang ◽  
Shui-Qing Yu ◽  
Yong-Hang Zhang
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Spontaneous Emission ◽  
Quantum Well Structures

Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple-quantum-well structures

1988 ◽  
Vol 37 (11) ◽  
pp. 6278-6284 ◽  
Author(s):  
U. Cebulla ◽  
G. Tränkle ◽  
U. Ziem ◽  
A. Forchel ◽  
G. Griffiths ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Spectroscopic Determination ◽  
Multiple Quantum ◽  
Quantum Well Structures

Determination of composition distributions in InP/InGaAs/InP quantum-well structures by X-ray crystal truncation rod scattering and quantum levels

1998 ◽  
Vol 186 (1-2) ◽  
pp. 48-54 ◽  
Author(s):  
M Tabuchi ◽  
K Fujibayashi ◽  
N Yamada ◽  
K Hagiwara ◽  
A Kobashi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
X Ray ◽  
Crystal Truncation Rod
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