Comparison between Thermal and Laser Annealing in Ion-Implanted Silicon.

1982 ◽  
Vol 14 ◽  
Author(s):  
A. Blosse ◽  
J.C. Bourgoin
Keyword(s):  
Thermal Treatment ◽  
Laser Pulse ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Process ◽  
Laser Annealing ◽  
Laser Energy ◽  
Deep Level ◽  
Annealing Process ◽  
Quenching Process ◽  
Transient Spectroscopy

ABSTRACTN-type, 1015 −1016 cm−3 doped, Fz, Silicon has been implanted with 1 to 4 × 1012 cm−2, 100 or 300 keV, As ions. The nature and concentration of the defects has been monitored using Deep Level transient Spectroscopy as a function of the thermal treatment (in the range 500–900°C) and of the energy of the pulse (15 ns) of a ruby (0.69,μm) laser (in the range 0.3 to 0.6 J cm−2). The defects resulting from annealing by the two treatments are found to be the same. Only, for energies higher than 0.5 J cm−2, the laser treatment introduced new defects (at Ec−0. 32 eV), presumably resulting from a quenching process. Thus a laser energy below the theshold for melting and epitaxial recrystallization is able to anneal the defects produced by implantation, demonstrating that the annealing process induced by the laser pulse is not a purely thermal process but probably involves an ionization enhanced mechanism.

Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si+-/N+-Co-Implanted 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 641-644 ◽  
Author(s):  
Frank Schmid ◽  
Thomas Frank ◽  
Gerhard Pensl
Keyword(s):  
Hall Effect ◽  
Experimental Evidence ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Annealing Process ◽  
Present Knowledge ◽  
Defect Complex ◽  
Neutral Defect ◽  
Transient Spectroscopy ◽  
Defect Species

Hall effect investigations taken on Si+-/N+-, C+-/N+- or Ne+-/N+-co-implanted 4H-SiC layers and deep level transient spectroscopy investigations taken on Si+-implanted 4H-SiC layers provide experimental evidence for an electrically neutral defect complex formed during the annealing process at temperatures between 1400°C and 1700°C. This defect complex consumes nitrogen donors and an intrinsic Si containing defect species (interstitial Si or Si-antisite) or Cvacancies. At our present knowledge, we favor an (NX-SiY)-complex.

Electrical Properties of Iron-Related Defects in Cz- And Fz-Grown N-Type Silicon

1998 ◽  
Vol 510 ◽  
Author(s):  
Hajime Kitagawa ◽  
Shuji Tanaka
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Isothermal Annealing ◽  
Emission Rate ◽  
Deep Level ◽  
Silicon Crystal ◽  
Annealing Process ◽  
Enthalpy And Entropy ◽  
Transient Spectroscopy ◽  
First Time

AbstractElectrical properties of iron-related defects (IRD) introduced in n-type floating zoned (FZ) and Czochralski (CZ)-grown silicon are studied by deep level transient spectroscopy and Hall effect. Electrically active IRD have been observed for the first time in n-type CZ silicon. Enthalpy and entropy factors of electron emission rate of IRD are equivalent between those observed in CZ and FZ silicon. In-diffusion process at 1160° and isothermal annealing process at 150° also indicate the identical nature of IRD between CZ and FZ silicon, which can be understood in terms of the consecutive progress of iron-related complex-formation reactions including interstitial iron atoms (Fei) in the silicon crystal. The IRD is independent of oxygen and phosphorus atoms. Only a small fraction of Fei forms electrically ionizable complexes

Hole trap generation by thermal treatment of nitrogen doped p-type ZnSe on GaAs characterized by deep level transient spectroscopy

1997 ◽  
Vol 71 (15) ◽  
pp. 2187-2189 ◽  
Author(s):  
K. Hellig ◽  
G. Prösch ◽  
M. Behringer ◽  
M. Fehrer ◽  
R. Beyer ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Hole Trap ◽  
Nitrogen Doped ◽  
Transient Spectroscopy ◽  
P Type

Rapid Thermal Process-Induced Defects : Gettering of Internal Contaminants

1989 ◽  
Vol 163 ◽  
Author(s):  
Bouchaib Hartiti ◽  
Wolfgang Eichhammer ◽  
Jean-Claude Muller ◽  
Paul Siffert
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Thermal Process ◽  
Deep Level ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Rapid Thermal Process ◽  
Slow Cooling ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Hydrogen Ion Implantation

AbstractWe show in this study that RTP-induced defects analysed by Deep Level Transient Spectroscopy (DLTS) are related to residual impurities present in as-grown silicon wafers. For one particular material an activation of a specific residual metallic impurity was observed in the temperature range 800 - 1000°C. This impurity can be returned to an electrically inactive precipitated form by classical thermal annealing (CTA) with a slow cooling rate or neutralized by means of low-energy hydrogen ion implantation.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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