scholarly journals Leakage current analysis of silicon diode with anode activated by furnace annealing or laser annealing using deep level transient spectroscopy

AIP Advances ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 125301
Author(s):  
Hiroki Wakimoto ◽  
Takashi Matsumoto ◽  
Koji Yano ◽  
Tsutomu Muranaka
Keyword(s):  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Laser Annealing ◽  
Deep Level ◽  
Current Analysis ◽  
Furnace Annealing ◽  
Silicon Diode ◽  
Transient Spectroscopy

Effects of leakage current on deep level transient spectroscopy

1984 ◽  
Vol 44 (8) ◽  
pp. 790-792 ◽  
Author(s):  
M. C. Chen ◽  
D. V. Lang ◽  
W. C. Dautremont‐Smith ◽  
A. M. Sergent ◽  
J. P. Harbison
Keyword(s):  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation

1986 ◽  
Vol 71 ◽  
Author(s):  
K. Nauka ◽  
Jun Amano ◽  
M.P. Scott ◽  
E.R. Weber ◽  
J.E. Turner ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Analytical Techniques ◽  
Deep Trap ◽  
Junction Region ◽  
Leakage Currents ◽  
Junction Diode ◽  
Transient Spectroscopy

AbstractDeep level transient spectroscopy (DLTS) in conjunction with other analytical techniques was used to establish a correlation between the leakage current in the TiSi2/p+/n-Si shallow diodes (0.25 micron) and the Ti-related Ec - 0.23 eV deep trap. It was found that Ti diffused into the junction region durin the TiSi2 formation and caused leakage currents with values up to 2 × 10−8 A/cm2. Further increases of the leakage current were related to the formation of a TiSi2/n-Si Schottky barrier.

Comparison between Thermal and Laser Annealing in Ion-Implanted Silicon.

1982 ◽  
Vol 14 ◽  
Author(s):  
A. Blosse ◽  
J.C. Bourgoin
Keyword(s):  
Thermal Treatment ◽  
Laser Pulse ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Process ◽  
Laser Annealing ◽  
Laser Energy ◽  
Deep Level ◽  
Annealing Process ◽  
Quenching Process ◽  
Transient Spectroscopy

ABSTRACTN-type, 1015 −1016 cm−3 doped, Fz, Silicon has been implanted with 1 to 4 × 1012 cm−2, 100 or 300 keV, As ions. The nature and concentration of the defects has been monitored using Deep Level transient Spectroscopy as a function of the thermal treatment (in the range 500–900°C) and of the energy of the pulse (15 ns) of a ruby (0.69,μm) laser (in the range 0.3 to 0.6 J cm−2). The defects resulting from annealing by the two treatments are found to be the same. Only, for energies higher than 0.5 J cm−2, the laser treatment introduced new defects (at Ec−0. 32 eV), presumably resulting from a quenching process. Thus a laser energy below the theshold for melting and epitaxial recrystallization is able to anneal the defects produced by implantation, demonstrating that the annealing process induced by the laser pulse is not a purely thermal process but probably involves an ionization enhanced mechanism.

Defects in High Energy Ion Irradiated 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 397-400 ◽  
Author(s):  
Gaetano Izzo ◽  
Grazia Litrico ◽  
Andrea Severino ◽  
Gaetano Foti ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Ion Irradiation ◽  
Deep Level ◽  
High Energy ◽  
Conduction Band Edge ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Fluence Range

The defects produced by 7.0 MeV C+ irradiation in 4H-SiC epitaxial layer were followed by Deep Level Transient Spectroscopy, current-voltage measurements and Transmission Electron Microscopy in a large fluence range (109-51013 ions/cm2). At low fluence (109 -1010 ions/cm2), the formation of three main level defects located at 0.68 eV, 0.98 eV and 1.4 eV below the conduction band edge is detected. The trap concentration increases with ion fluence suggesting that these levels are associated to the point defects generated by ion irradiation. In this fluence range the leakage current of the diodes does not change. At higher fluence an evolution of defects occurs, as the concentration of traps at 0.68 eV and 1.4 eV decreases, while the intensity of the level at 0.98 eV remains constant. In this fluence range complex defects are formed and an increase of a factor five in the leakage current is measured.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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