Gas Phase Interactions between Triethylindium and Trimethylgallium

1988 ◽  
Vol 131 ◽  
Author(s):  
P. D. Agnello ◽  
S. K. Ghandhi

ABSTRACTA study of the room temperature gas-phase interactions between gallium and indium alkyls was undertaken using a mass spectrometer sampling system, mounted on a low pressure organometallic vapor phase epitaxial reactor. Mixtures of triethylindium with triethylgallium or trimethylgallium were investigated. Both combinations formed addition compounds; moreover, the triethylindium-trimethylgallium mixture underwent alkyl exchange. Both admixtures showed reduced reactivity towards arsine. A structure for the addition compound is proposed.

1987 ◽  
Vol 67 (4) ◽  
pp. 606-606 ◽  
Author(s):  
Robert F. Koebert ◽  
Richard Munster

2002 ◽  
Author(s):  
Atsushi Koizumi ◽  
Kentaro Inoue ◽  
Yasufumi Fujiwara ◽  
Taketoshi Yoshikane ◽  
Akira Urakami ◽  
...  

1995 ◽  
Vol 49 (9) ◽  
pp. 1232-1238 ◽  
Author(s):  
Zhan Shi ◽  
Stephen Brewer ◽  
Richard Sacks

The behavior of a planar magnetron glow discharge used as a sampling device and ion source for mass spectrometry of conducting solids is examined. Low-pressure operation of the magnetron allows efficient sputtering and ion production from conducting samples. Interfacing the magnetron with the mass spectrometer is simplified by low-pressure magnetron operation. A special sample holder allows up to five sample plugs to be analyzed without the source chamber vacuum being broken. Sample ion current is not found to be a simple function of discharge current, but is a strong function of sample axial position relative to the mass spectrometer sampling cone. The mass spectrometer sampling cone orifice diameter may be varied from 0.5 to 5.0 mm. A cone orifice diameter of 2.0 mm yields optimum analytical conditions. Determination of Al at the 3–5% level in a series of NIST Zn-base alloy standards yields a straight-line analytical curve, suggesting the potential application of the device to high-precision analyses of alloys.


2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2223-2225 ◽  
Author(s):  
Atsushi Koizumi ◽  
Yasufumi Fujiwara ◽  
Kentaro Inoue ◽  
Akira Urakami ◽  
Taketoshi Yoshikane ◽  
...  

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