Arf Laser-Induced Chemical-Vapor Deposition of Tungsten for Gate Electrodes

1988 ◽  
Vol 129 ◽  
Author(s):  
H. Matsuhashi ◽  
S. Nishikawa ◽  
S. Ohno
Keyword(s):  
Chemical Vapor Deposition ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mos Capacitors ◽  
Incident Laser Power ◽  
Partial Pressures ◽  
Reaction Orders ◽  
Arf Laser ◽  
The Difference

ABSTRACTThe deposition of W films by ArF laser-induced chemical-vapor deposition (LCVD) was investigated as a function of incident laser power, WF6 and H2 partial pressures, and substrate temperature. The deposition of W films by LCVD is discussed dividing that into two parts, thermal CVD (TCVD) and photon assisted CVD (PhCVD). The rate of PhCVD has been defined as the difference between the rates with and without laser irradiation. The reaction orders for PhCVD are 1, 0 with respect to WF6 and H2 partial pressures, respectively, and the rate linearly increases with increase in laser repetition rate. The activation energy in PhCVD is 0.17 eV. These facts indicate that, in LCVD, PhCVD takes place independently of TCVD and that the deposition rate in PhCVD is determined by the formation of F radicals in the dissociation of WF6 molecules by laser irradiation.MOS capacitors with LCVD-W gates were fabricated and their characteristics were compared with those with sputtered-W gates. It was shown that the level of contamination due to mobile ions in the capacitor with the LCVD-W gate was extremely low.

scholarly journals Growth Mechanism of SmB6 Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1062
Author(s):  
Yi Chu ◽  
Yugui Cui ◽  
Shaoyun Huang ◽  
Yingjie Xing ◽  
Hongqi Xu
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Element Analysis ◽  
Kondo Insulator ◽  
Catalyst Free ◽  
Transmission Electron ◽  
The Difference ◽  
Physical Phenomena

SmB6 nanowires, as a prototype of nanostructured topological Kondo insulator, have shown rich novel physical phenomena relating to their surface. Catalyst-assisted chemical vapor deposition (CVD) is a common approach to prepare SmB6 nanowires and Ni is the most popular catalyst used to initiate the growth of SmB6 nanowires. Here, we study the effect of growth mechanism on the surface of SmB6 nanowires synthesized by CVD. Two types of SmB6 nanowires are obtained when using Ni as the catalyst. In addition to pure SmB6 nanowires without Ni impurity, a small amount of Ni is detected on the surface of some SmB6 nanowires by element analysis with transmission electron microscopy. In order to eliminate the possible distribution of Ni on nanowire surface, we synthesize single crystalline SmB6 nanowires by CVD without using catalyst. The difference between catalyst-assisted and catalyst-free growth mechanism is discussed.

Metal-Organic Chemical Vapor Deposition of InSb on Gaas and InSb in an Inverted Stagnation Point Flow Geometry

1988 ◽  
Vol 144 ◽  
Author(s):  
G. A. Hebner ◽  
R. M. Biefeld ◽  
K. P. Killeen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Partial Pressures ◽  
Narrow Bandgap ◽  
Flow Geometry ◽  
Metal Organic

ABSTRACTSeveral properties of InSb such as high mobility and narrow bandgap make it an attractive candidate for many unique devices. We have examined the metalorganic chemical vapor deposition (MOCVD) of InSb on GaAs and InSb substrates under a variety of conditions using trimethylindium and trimethylantimony sources. The absolute metal-organic partial pressures above the susceptor were monitored using in-situ Ultraviolet (UV) absorption spectroscopy. X-ray studies of the homoepitaxial growth of InSb on InSb substrates (100) indicate good crystalline epitaxial growth while the x-ray peak for the InSb grown on GaAs (100) is broadened due to defects. Room-temperature Hall mobility measurements performed on the heteroepitaxial InSb layer on GaAs substrates indicates that the mobility of the InSb increases with increasing layer thickness. Mobilities range from 12,000 cm2/V sec for 0.8 micron layers to 38,000 cm2/V sec for 7.4 micron layers. The carrier concentrations are relatively constant (2 to 4 × 1016 cm−3 ) for the n type InSb deposited layers.

Nanostructured carbon generated by chemical vapor deposition from acetylene on surfaces pretreated by a combination of physical and chemical methods

2000 ◽  
Vol 15 (10) ◽  
pp. 2087-2090 ◽  
Author(s):  
Andrea Siska ◽  
Zoltán Kónya ◽  
Klára Hernádi ◽  
Imre Kiricsi ◽  
Krisztián Kordás ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalyst System ◽  
Cobalt Acetate ◽  
Acetate Solution ◽  
Physical And Chemical

Chemical vapor deposition of carbon nanotubes by catalytic decomposition of acetylene on V2O5 microtube crystals is presented. The catalyst was prepared by laser irradiation of vanadium sheets and treated with cobalt acetate solution. The carbon deposits generated on this novel type of catalyst were characterized by transmission electron microscopy measurements. Both carbon nanofibers and carbon nanotubes were found to be formed. This catalyst system, generated by the combined laser irradiation and chemical impregnation methods, is a new and promising way to study the differences in the mechanism of the generation of nanostructures.

Hydrogen incorporation in silicon oxide films deposited by ArF laser-induced chemical vapor deposition

1995 ◽  
Vol 187 ◽  
pp. 75-80 ◽  
Author(s):  
E.G. Parada ◽  
P. González ◽  
J. Serra ◽  
B. León ◽  
M. Pérez-Amor ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Hydrogen Incorporation ◽  
Arf Laser

EFFECTIVE GaN SURFACE PASSIVATION BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE

2012 ◽  
Vol 11 (04) ◽  
pp. 1240023
Author(s):  
A. CHAKROUN ◽  
A. JAOUAD ◽  
A. GIGUÈRE ◽  
V. AIMEZ ◽  
R. ARÈS
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Passivation ◽  
Silicon Oxide ◽  
Stable Process ◽  
Chemical Vapor ◽  
Frequency Dispersion ◽  
State Density ◽  
Oxide Semiconductor ◽  
Mos Capacitors

We report on an effective and stable process for GaN surface passivation by plasma enhanced chemical vapor deposition (PECVD) of silicon oxide (SiOx). Metal–oxide–semiconductor (MOS) capacitors were fabricated on unintentionally doped n- GaN layers grown by OMVPE on sapphire substrates and characterized using capacitance–voltage (C–V) and current–voltage (I–V) measurements. A high level of surface potential modulation, a small voltage shift, a small hysteresis, and no evident frequency dispersion are observed on C–V characteristics, indicating a high SiOx/GaN interface quality with a low electronic surface state density.

Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes

2020 ◽  
Vol 546 ◽  
pp. 125809
Author(s):  
Shiyang Ji ◽  
Ryoji Kosugi ◽  
Kazutoshi Kojima ◽  
Kohei Adachi ◽  
Yasuyuki Kawada ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Partial Pressures ◽  
Deposition Processes
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