Analysis of Nitrogen, Boron, and Hydrogen of i-BN Films Fabricated by the Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
J-P. Hirvonen ◽  
J. K. Hirvonen

ABSTRACTThe concentrations of the main constituents of hard i-BN films produced by the ion beam assisted deposition were measured using the nuclear resonance reactions 11B(p,γ) 12C at Ep = 163 keV, and 15N(p,αγ) 12C at Ep = 429 key, respectively. The hydrogen contamination of the samples was investigated using the forward recoil spectroscopy (FRES) technique with a 2 MeV He+ beam. Some complementary analyses of carbon and oxygen were performed using (d,p) and (d,α) -reactions.Hyperstoichiometric boron concentration were found in almost all films. The relative concentrations of nitrogen and boron were also slightly dependent on the deposition conditions as well as the deposition temperature. Contrary to this, hydrogen contamination, that was generally at a low level with few exceptions, was more independent of these parameters.

2012 ◽  
Vol 472-475 ◽  
pp. 44-49 ◽  
Author(s):  
Yun Song Lian ◽  
Jian Xin Deng ◽  
Shi Peng Li

WS2 soft coated tools were deposited by medium-frequency magnetron sputtering, multi-arc ion plating and ion beam assisted deposition technique on the YT15 cemented carbide substrates. The influence of the deposition temperature on the coating properties has been studied. The coatings exhibited a dense and fine grained structure. WS2 coatings revealed a (002) preferred crystal orientation. WS2 soft coatings with deposition temperature of 200°C revealed a better crystallization of (002) preferred crystal orientation of Ⅱ texture than other three deposition temperatures. And the adhesive strength could get to 43.25N which was the largest. The thickness of WS2 coatings decreased firstly, then increased, and finally reduced with the increasement of deposition temperature. And the microhardness of the coatings increased firstly, then decreased, and finally increased with the increasement of deposition temperature.


2005 ◽  
Vol 868 ◽  
Author(s):  
Liliana Stan ◽  
Paul N. Arendt ◽  
Raymond F. DePaula ◽  
Igor Usov ◽  
James R. Groves

AbstractThe variation in the substrate temperature during ion beam assisted deposition (IBAD), which employs the use of energetic ions to bombard a growing film, has been shown to influence the quality of crystalline texture in MgO films. Determining the acceptable deviation from the optimum ion to molecule ratio for different substrate temperatures establishes the optimum MgO deposition conditions. For each fixed deposition temperature, a set of samples was produced by varying the ion assist beam current from sample to sample while keeping the deposition rate constant. In this way, the ion to molecule ratio was modified and the range of achieving well textured films was determined. The investigation of the MgO texture dependence on the substrate temperature reveals that the best in-plane alignment is obtained at ˜ 25°C. At this temperature, MgO films with in-plane orientation distribution as low as 3.7° full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100°C have broad in-plane alignment. Although, the deposition at the lowest temperature (-150°C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.


1990 ◽  
Vol 187 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant

AbstractEpitaxial growth of Ni (111) on Si (111) has previously been obtained at room temperature by 25-keV-Ni ion beam assisted deposition, where both ion and vapor fluxes were incident at 45° to the specimen normal. This work explores the effect of a wider range of deposition conditions on epitaxial film quality. Nominally 300-nm-thick films were deposited at room temperature on Si (111) and other substrates. The substrates were sputter cleaned by the Ni ion beam immediately prior to deposition. Ion energies of 25 to 175 keV, relative ion to vapor fluxes R from 0 to 0.1, and vapor deposition rates of 0.05 to 0.5 nm/s were examined. Bragg-Brentano symmetric x-ray diffraction evaluated film quality while Ni (220) grazing-incidence x-ray diffraction rocking curves verified film epitaxy. Film quality changed gradually over these deposition parameters, with an optimum at 25 keV and an R of about 0.01. At higher energies and R values sputtering and radiation damage destroyed the film epitaxy


10.14311/396 ◽  
2003 ◽  
Vol 43 (1) ◽  
Author(s):  
M. Zoriy ◽  
F. Černý ◽  
D. Palamarchuk ◽  
S. Konvičková ◽  
I. Hüttel

Chromium nitride films are known as good protective layers for against both corrosion and wear. These coatings have been studied in detail during recent years. Their protective capability strongly depends on the deposition conditions. A modern method for preparing chromium nitride is the IBAD (Ion Beam Assisted Deposition) method. The main parameter determining the composition and properties of the films prepared by the IBAD method is the arrival ratio of impinging nitrogen ions to chromium atoms. In order to calibrate the ion beam XY-mechanical scanner with a Faraday cup, a detector was designed and constructed. By mathematical processing of the data, the flux of the nitrogen atoms was found. To obtain the flux of the chromium atoms the RBS and Talystep methods were used. Now, on the basis of this data, we can perform CrNx, coatings with controlled composition and properties.


2010 ◽  
Vol 24 (01n02) ◽  
pp. 43-50 ◽  
Author(s):  
L. DONG ◽  
G. Q. LIU ◽  
Y. D. SUN ◽  
M. Y. LIU ◽  
D. J. LI

TiB 2/ Si 3 N 4 nano multilayers have been synthesized under different deposition parameters related to substrate by ion beam assisted deposition (IBAD). XRD, Nano indenter, profiler, and multi-functional tester for material surface properties were used to characterize the microstructure and mechanical properties of the multilayers. The results indicated a well-defined composition modulation and layer structure of the multilayers. To the multilayers with constant modulation ratio of 15.4:1 and modulation period of 11.8 nm, the multilayer deposited on Al 2 O 3(111) substrate with 38 nm-thick Ti buffer layer at deposition temperature of 225°C revealed the highest hardness (37.4 GPa) and elastic modulus. This hardest multilayer also showed the improved residual stress, friction coefficient, and fracture resistance.


1998 ◽  
Vol 13 (11) ◽  
pp. 3149-3152 ◽  
Author(s):  
J. Wiesmann ◽  
J. Dzick ◽  
J. Hoffmann ◽  
K. Heinemann ◽  
H. C. Freyhardt

Biaxially textured YSZ films have a large technical relevance for power or electronic applications of HTS films. The YSZ serves as a diffusion barrier and as a template for an epitaxial growth of the HTS. On polycrystalline substrates the biaxial alignment is achieved by using an ion-beam-assisted deposition method. The best obtained textures were characterized by a full width at half maximum of 7° in an 〈111〉 x-ray diffraction Φ scan. The FWHM decreases with increasing film thickness. The growth mechanism is investigated with respect to three important effects: nucleation, growth selection, and homoepitaxial growth. It could be shown that during nucleation at the beginning of deposition the angle between the assisting beam and the substrate normal has to be fixed at 55°, whereas during the growth selection this angle can be varied. Especially the homoepitaxial effects allow changes in the deposition conditions without destroying the already achieved texture quality.


2016 ◽  
Vol 185 ◽  
pp. 295-298 ◽  
Author(s):  
Lin-Ao Zhang ◽  
Hao-Nan Liu ◽  
Xiao-Xia Suo ◽  
Shuo Tong ◽  
Ying-Lan Li ◽  
...  

2009 ◽  
Vol 19 (3) ◽  
pp. 3311-3314 ◽  
Author(s):  
J.R. Groves ◽  
R.F. DePaula ◽  
L. Stan ◽  
R.H. Hammond ◽  
B.M. Clemens

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  

2010 ◽  
Vol 85 (7-9) ◽  
pp. 1689-1692 ◽  
Author(s):  
Yang-Il Jung ◽  
Jung-Suk Lee ◽  
Jeong-Yong Park ◽  
Byoung-Kwon Choi ◽  
Yong-Hwan Jeong ◽  
...  

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