Epitaxy of Ni on Si(111) by Ion Beam Assisted Deposition

1990 ◽  
Vol 187 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant
Keyword(s):  
Room Temperature ◽  
Epitaxial Film ◽  
Ion Beam ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Ion Energies ◽  
Deposition Conditions

AbstractEpitaxial growth of Ni (111) on Si (111) has previously been obtained at room temperature by 25-keV-Ni ion beam assisted deposition, where both ion and vapor fluxes were incident at 45° to the specimen normal. This work explores the effect of a wider range of deposition conditions on epitaxial film quality. Nominally 300-nm-thick films were deposited at room temperature on Si (111) and other substrates. The substrates were sputter cleaned by the Ni ion beam immediately prior to deposition. Ion energies of 25 to 175 keV, relative ion to vapor fluxes R from 0 to 0.1, and vapor deposition rates of 0.05 to 0.5 nm/s were examined. Bragg-Brentano symmetric x-ray diffraction evaluated film quality while Ni (220) grazing-incidence x-ray diffraction rocking curves verified film epitaxy. Film quality changed gradually over these deposition parameters, with an optimum at 25 keV and an R of about 0.01. At higher energies and R values sputtering and radiation damage destroyed the film epitaxy

Synthesis of nanometre multi-layered ZrN/(Ti,Al)N coatings by ion-beam-assisted deposition

2008 ◽  
Vol 222 (1) ◽  
pp. 23-26
Author(s):  
M Cao ◽  
L Dong ◽  
G Q Liu ◽  
D J Li
Keyword(s):  
Fracture Resistance ◽  
Room Temperature ◽  
Layer Structure ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Composition Modulation ◽  
Layered Coatings ◽  
Ion Beam Assisted Deposition

ZrN/(Ti, Al)N nanometre multi-layered coatings with different modulation ratios and ion beam fluxes have been synthesized by ion-beam-assisted deposition at room temperature. X-ray diffraction (XRD), a nano indenter, and a profiler were used to characterize the microstructure and mechanical properties of the coatings. The small-angle XRD pattern indicated a well-defined composition modulation and layer structure. The XRD pattern showed a significant mixture of strong ZrN(111) and (Ti,Al)N(111) textures. At an assisted beam flux of 5 mA and modulation ratio of 2:3, the ZrN/(Ti,Al)N multi-layer possessed the highest hardness (30.1GPa) and elastic modulus (361GPa). Its fracture resistance, and residual stress also showed the best results.

Epitaxial Growth of Ni on Si by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant ◽  
S. B. Qadr
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Crystallographic Texture ◽  
Room Temperature ◽  
Ion Beam ◽  
Sample Surface ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition

ABSTRACTEpitaxial Ni films were grown on Si(111) substrates to a thickness of about 500 nm by ion beam assisted deposition at room temperature. The films were grown using 25-keV-Ni ions and electron-beam evaporation of Ni at a relative arrival ratio of one ion for every 100 Ni vapor atoms. The ion beam and evaporant flux were both incident at 45° to the sample surface. Standard θ-2θ X-ray diffraction scans revealed the extent of crystallographic texture, while Ni {220} pole figure measurements identified the azimuthal orientation of Ni in the plane of the film. Films grown without the ion beam consisted of nearly randomly oriented fine grains of Ni whereas with bombardment the Ni (111) plane was found parallel to the Si (111) plane. In all the epitaxial cases the Ni [110] direction was perpendicular to the axis of the ion beam, suggesting that the azimuthal orientation of the film was determined by channeling of the ion beam down {110} planar channels in the Ni film. Additional experiments with different ions, energies, and substrates revealed their influence on the degree of epitaxy obtained.

Growth mechanism of biaxially textured YSZ films deposited by ion-beam-assisted deposition

1998 ◽  
Vol 13 (11) ◽  
pp. 3149-3152 ◽  
Author(s):  
J. Wiesmann ◽  
J. Dzick ◽  
J. Hoffmann ◽  
K. Heinemann ◽  
H. C. Freyhardt
Keyword(s):  
Growth Mechanism ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Homoepitaxial Growth ◽  
Ion Beam Assisted Deposition ◽  
Growth Selection ◽  
Biaxial Alignment ◽  
Hts Films ◽  
Deposition Conditions

Biaxially textured YSZ films have a large technical relevance for power or electronic applications of HTS films. The YSZ serves as a diffusion barrier and as a template for an epitaxial growth of the HTS. On polycrystalline substrates the biaxial alignment is achieved by using an ion-beam-assisted deposition method. The best obtained textures were characterized by a full width at half maximum of 7° in an 〈111〉 x-ray diffraction Φ scan. The FWHM decreases with increasing film thickness. The growth mechanism is investigated with respect to three important effects: nucleation, growth selection, and homoepitaxial growth. It could be shown that during nucleation at the beginning of deposition the angle between the assisting beam and the substrate normal has to be fixed at 55°, whereas during the growth selection this angle can be varied. Especially the homoepitaxial effects allow changes in the deposition conditions without destroying the already achieved texture quality.

Laser Ablated Buffer Layers for YBCO-Tape Conductors

1998 ◽  
Vol 526 ◽  
Author(s):  
B. Holzapfel ◽  
V. Betz ◽  
M.A. Arranz ◽  
N. Reger ◽  
L. Schultz
Keyword(s):  
Room Temperature ◽  
Boundary Diffusion ◽  
Ion Beam ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
Deposition Parameters ◽  
Oriented Parallel ◽  
Ybco Tape ◽  
Deposition Conditions

AbstractBiaxially oriented yttria stabilized zirconia (YSZ) and Pr6O11 buffer layers were grown at room temperature by Ion-Beam Assisted Laser Deposition (IBALD) on metal substrates. Dependent on deposition parameters, IBALD grown films showed in-plane orientations of about 10° FWHM (full-width at half maximum) for both systems. In contrast to the YSZ system, where best in plane alignment is found for a [111] direction oriented parallel to the ion beam, the Pr6O11 system shows best in-plane alignment at nearly gracing incidence of the ion beam. An additional thin intermediate CeO2 layer improves the heteroepitaxial growth of YBCO on highly biaxially oriented YSZ films. Pulsed Laser Deposition (PLD) was also used to grow epitaxial CeO2 buffer layers directly on biaxially textured Ni-tapes. SIMS investigations showed an interdiffusion zone of about 0.5μm at standard deposition conditions, but no enhanced grain boundary diffusion could be observed.

scholarly journals The Effect of Thickness on the Physical Properties of Fe2O3 Thin Films Prepared by DC Magnetron Sputtering

2017 ◽  
Vol 28 (1) ◽  
pp. 149
Author(s):  
Baha'a A. Al-Hilli
Keyword(s):  
Film Thickness ◽  
Physical Properties ◽  
Room Temperature ◽  
Optical Constants ◽  
Energy Gap ◽  
Nano Particle ◽  
X Ray Diffraction ◽  
Thin Film Thickness ◽  
X Ray ◽  
Deposition Parameters

The objective of this study is to assess the influence of nano-particle Fe2O3 thin film thickness on some physical properties which were prepared by magnetron DC- sputtering on glass substrate at room temperature. The structure was tested with X-Ray diffraction and it was to be amorphous and to become single crystal with recognized peak in (003) after annealing at temperature 500oC. The physical properties as a function of deposition parameters and then film thickness were studied. The optical properties such as absorbance, energy gap and some optical constants are measured and found that of about (3eV) energy gap.

Room Temperature Synthesis of Cu2O Nanospheres: Optical Properties and Thermal Behavior

2014 ◽  
Vol 21 (1) ◽  
pp. 108-119 ◽  
Author(s):  
Daniela Nunes ◽  
Lídia Santos ◽  
Paulo Duarte ◽  
Ana Pimentel ◽  
Joana V. Pinto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Behavior ◽  
Room Temperature ◽  
Diffuse Reflectance Spectroscopy ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron

AbstractThe present work reports a simple and easy wet chemistry synthesis of cuprous oxide (Cu2O) nanospheres at room temperature without surfactants and using different precursors. Structural characterization was carried out by X-ray diffraction, transmission electron microscopy, and scanning electron microscopy coupled with focused ion beam and energy-dispersive X-ray spectroscopy. The optical band gaps were determined from diffuse reflectance spectroscopy. The photoluminescence behavior of the as-synthesized nanospheres showed significant differences depending on the precursors used. The Cu2O nanospheres were constituted by aggregates of nanocrystals, in which an on/off emission behavior of each individual nanocrystal was identified during transmission electron microscopy observations. The thermal behavior of the Cu2O nanospheres was investigated with in situ X-ray diffraction and differential scanning calorimetry experiments. Remarkable structural differences were observed for the nanospheres annealed in air, which turned into hollow spherical structures surrounded by outsized nanocrystals.

Phase Evolutions in the Metallic Precursors of the Ternary Copper-Indium-Gallium System

2013 ◽  
Vol 774-776 ◽  
pp. 974-980
Author(s):  
Jian Wang ◽  
Jie Zhu
Keyword(s):  
Surface Morphology ◽  
Room Temperature ◽  
Intermetallic Phase ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Copper Indium ◽  
Rich Condition ◽  
Indium Gallium ◽  
Copper Indium Gallium

Two types of metallic precursors used for the growth of Cu (In,Ga)Se2were deposited from a single CuInGa ternary target and binary alloy CuGa and CuIn targets, respectively. Phase evolutions in the precursors of the ternary copper-indium-gallium system were investigated over the temperature range from room temperature to 500°C. Grazing incidence X-ray diffraction (GIXRD) and scanning electron microscopy (SEM) were applied to characterize evolution of phases and surface morphology in the precursor layers. With annealing temperatures increased, phase evolutions of Cu9Ga4, Cu11In9, Cu16In9and CuIn were observed. Surface morphology of the two types of precursors changed significantly, which could support the phase evolutions in the ternary Cu-In-Ga system for reactive annealing processes. The existence of the final Cu11In9phase, which is the most favorable intermetallic phase for the formation of CuInSe2and Cu (In,Ga)Se2thin films, may be transformed by a speculated peritectoid reaction of In and Cu16In9to Cu11In9under In-rich condition.

Single-Crystal AU-NI Solid Solutions Grown by MBE

1992 ◽  
Vol 280 ◽  
Author(s):  
A. Marty ◽  
B. Gilles ◽  
G. Patrat ◽  
J. C. Joud ◽  
A. Chamberod
Keyword(s):  
Single Crystal ◽  
Solid Solutions ◽  
Room Temperature ◽  
Large Strain ◽  
Grazing Incidence ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTEpitaxial solid solutions Au1-x Nix (100) have been obtained at room temperature on Au(100) substrates by the MBE technique. The layers are 10 nm-thick and the composition x has been varied up to 0.37. A large strain (2–3%) has been measured by X-ray diffraction. The lattice parameters have been measured in two perpendicular directions, perpendicular and parallel to the surface. In the latest case, the grazing-incidence technique has been used. Because this technique is very sensitive to the surface, the strain results may be re-interpreted if, the upperlOO nm are enriched in Au.

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