scholarly journals Measuring the Process Parameters of the IBAD Method

10.14311/396 ◽  
2003 ◽  
Vol 43 (1) ◽  
Author(s):  
M. Zoriy ◽  
F. Černý ◽  
D. Palamarchuk ◽  
S. Konvičková ◽  
I. Hüttel
Keyword(s):  
Ion Beam ◽  
Modern Method ◽  
Corrosion And Wear ◽  
Chromium Nitride ◽  
Faraday Cup ◽  
Protective Layers ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ions ◽  
Mathematical Processing ◽  
Deposition Conditions

Chromium nitride films are known as good protective layers for against both corrosion and wear. These coatings have been studied in detail during recent years. Their protective capability strongly depends on the deposition conditions. A modern method for preparing chromium nitride is the IBAD (Ion Beam Assisted Deposition) method. The main parameter determining the composition and properties of the films prepared by the IBAD method is the arrival ratio of impinging nitrogen ions to chromium atoms. In order to calibrate the ion beam XY-mechanical scanner with a Faraday cup, a detector was designed and constructed. By mathematical processing of the data, the flux of the nitrogen atoms was found. To obtain the flux of the chromium atoms the RBS and Talystep methods were used. Now, on the basis of this data, we can perform CrNx, coatings with controlled composition and properties.

Ion Beam assisted Deposition of Titanium Nitride

1988 ◽  
Vol 128 ◽  
Author(s):  
G. K. Hubler ◽  
D. Vanvechten ◽  
E. P. Donovan ◽  
R. A. Kant
Keyword(s):  
Titanium Nitride ◽  
Partial Pressure ◽  
Ion Beam ◽  
Surface Adsorption ◽  
Active Surface ◽  
Sticking Coefficient ◽  
Adsorption Sites ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ions ◽  
Ambient Gas

ABSTRACTThe composition of titanium nitride films prepared by ion beam assisted deposition was studied as a function of the partial pressure of N2 gas in the deposition volume, and as a function of the impingement 'ratio of nitrogen ions (500 eV) to evaporated titanium atoms. The amount of nitrogen incorporated from the ambient gas was derived by subtraction of the fraction introduced by the ion beam. It is shown that the primary effects of ion bombardment are an increase in the sticking coefficient and a reduction in the number of active surface adsorption sites.

Chromium nitride coatings produced by ion beam assisted deposition

1996 ◽  
Vol 86-87 ◽  
pp. 309-315 ◽  
Author(s):  
J.D. Demaree ◽  
C.G. Fountzoulas ◽  
J.K. Hirvonen
Keyword(s):  
Ion Beam ◽  
Chromium Nitride ◽  
Ion Beam Assisted Deposition ◽  
Nitride Coatings

Influence of the Substrate Temperature on the Texture of MgO Films Grown by Ion Beam Assisted Deposition

2005 ◽  
Vol 868 ◽  
Author(s):  
Liliana Stan ◽  
Paul N. Arendt ◽  
Raymond F. DePaula ◽  
Igor Usov ◽  
James R. Groves
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Orientation Distribution ◽  
Beam Current ◽  
Energetic Ions ◽  
Ion Beam Assisted Deposition ◽  
Acceptable Deviation ◽  
Substrate Temperatures ◽  
Deposition Conditions

AbstractThe variation in the substrate temperature during ion beam assisted deposition (IBAD), which employs the use of energetic ions to bombard a growing film, has been shown to influence the quality of crystalline texture in MgO films. Determining the acceptable deviation from the optimum ion to molecule ratio for different substrate temperatures establishes the optimum MgO deposition conditions. For each fixed deposition temperature, a set of samples was produced by varying the ion assist beam current from sample to sample while keeping the deposition rate constant. In this way, the ion to molecule ratio was modified and the range of achieving well textured films was determined. The investigation of the MgO texture dependence on the substrate temperature reveals that the best in-plane alignment is obtained at ˜ 25°C. At this temperature, MgO films with in-plane orientation distribution as low as 3.7° full width at half maximum (FWHM) have been attained. MgO films deposited at temperatures higher than 100°C have broad in-plane alignment. Although, the deposition at the lowest temperature (-150°C) did not improve the in-plane texture, the acceptable deviation from the optimum ion to molecule ratio for achieving biaxially textured films was the largest. As a trend, the acceptable ion to molecule deviation decreases with increasing substrate temperature. This is especially important for continuous IBAD MgO depositions where less restrictive conditions are desired.

Epitaxy of Ni on Si(111) by Ion Beam Assisted Deposition

1990 ◽  
Vol 187 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant
Keyword(s):  
Room Temperature ◽  
Epitaxial Film ◽  
Ion Beam ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Ion Energies ◽  
Deposition Conditions

AbstractEpitaxial growth of Ni (111) on Si (111) has previously been obtained at room temperature by 25-keV-Ni ion beam assisted deposition, where both ion and vapor fluxes were incident at 45° to the specimen normal. This work explores the effect of a wider range of deposition conditions on epitaxial film quality. Nominally 300-nm-thick films were deposited at room temperature on Si (111) and other substrates. The substrates were sputter cleaned by the Ni ion beam immediately prior to deposition. Ion energies of 25 to 175 keV, relative ion to vapor fluxes R from 0 to 0.1, and vapor deposition rates of 0.05 to 0.5 nm/s were examined. Bragg-Brentano symmetric x-ray diffraction evaluated film quality while Ni (220) grazing-incidence x-ray diffraction rocking curves verified film epitaxy. Film quality changed gradually over these deposition parameters, with an optimum at 25 keV and an R of about 0.01. At higher energies and R values sputtering and radiation damage destroyed the film epitaxy

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