Angle of Incidence Effects in Ion Beam Processing

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. E. Harper ◽  
S. E. Hörnström ◽  
P. J. Rudeck ◽  
R. M. Bradley
Keyword(s):  
Etch Rate ◽  
Ion Beam ◽  
Etching Rate ◽  
Normal Incidence ◽  
Ion Bombardment ◽  
Angle Of Incidence ◽  
Processing Parameter ◽  
Ion Beam Etching ◽  
Characteristic Wavelength ◽  
Glancing Angle

ABSTRACTThe angle of incidence of ion bombardment is an important processing parameter, which can strongly affect the shape, composition and microstructure of bombarded surfaces. We describe several phenomena directly related to the angle of ion incidence during ion beam etching and ion beam assisted deposition. First, the development of surface ripple topography during ion beam etching is modeled. Surface perturbations are shown to grow under ion bombardment, while surface selfdiffusion acts to select a characteristic wavelength. The orientation of these characteristic ripples changes by 90° as the angle of ion incidence is varied from near-normal to near-glancing angle. The second example is the effect of angle of incidence on the etching rate of Ta under mixed Ar-O2 ion bombardment. For pure Ar bombardment, the sputtering yield of Ta increases with angle of ion incidence slower than secθ, producing a maximum etch rate at normal incidence. Above a critical pressure of O2, however, the yield increases faster than secθ dependence, producing a maximum etch rate at a non-normal angle of incidence. The third example is the effect of angle of incidence on the preferential sputtering of Al relative to Cu in Al-5% Cu thin films. Films deposited by evaporation with simultaneous Ar ion bombardment at 500 eV show a depletion of Al relative to Cu. This composition change is enhanced by increasing the angle of incidence away from normal, resulting in a higher Cu concentration in a film deposited on a tilted surface. Finally, a mechanism is described for the generation of oriented microstructure in films deposited under simultaneous glancing-angle ion bombardment, demonstrated previously for Nb. Grain orientations are selected which allow channelling of the ion beam. These results show that the shape, composition and microstructure of films deposited under ion bombardment respond to changes in angle of incidence, and that these effects need further study and modeling.

Microstructure of Niobium Films Oriented By Non-Normal Incidence Ion Bombardment During Growth

1985 ◽  
Vol 51 ◽  
Author(s):  
J.M.E. Harper ◽  
D.A. Smith ◽  
L.S. Yu ◽  
J.J. Cuomo
Keyword(s):  
Room Temperature ◽  
Film Growth ◽  
Ion Beam ◽  
Normal Incidence ◽  
Ion Bombardment ◽  
Fiber Texture ◽  
Thin Film Growth ◽  
Transmission Electron ◽  
Glancing Angle ◽  
Beam Orientation

ABSTRACTWe demonstrate that non-normal incidence ion bombardment applied during thin film growth has a pronounced alignment effect on crystallographic orientation. Restricted fiber texture is achieved in Nb films deposited at room temperature onto amorphous silica substrates with simultaneous 200 eV Ar+ ion bombardment at 20 degrees from glancing angle. Xray pole figure measurements and transmission electron diffraction show that the alignment direction is a channeling direction for the incident ions between (110) planes. The degree of alignment increases linearly with the fraction resputtered by the ion beam. Recommendations are given for optimizing this ion beam orientation effect.

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

1997 ◽  
Vol 468 ◽  
Author(s):  
Jae-Won Lee ◽  
Hyong-Soo Park ◽  
Yong-Jo Park ◽  
Myong-Cheol Yoo ◽  
Tae-Il Kim ◽  
...  
Keyword(s):  
Room Temperature ◽  
Volume Fraction ◽  
Ion Beam ◽  
Etching Rate ◽  
Dry Etching ◽  
Ion Beam Etching ◽  
Etching Profile ◽  
Etching Parameters ◽  
Etching Selectivity ◽  
Reactive Ion Beam Etching

ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.

Ion Beam Etching of Cellular Material

1974 ◽  
Vol 32 ◽  
pp. 126-127
Author(s):  
M. Spector ◽  
L. C. Burns ◽  
S. L. Kimzey
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Ion Beam ◽  
Cellular Material ◽  
Angle Of Incidence ◽  
Time Intervals ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
Argon Ion ◽  
Scanning Electron

The ion beam etching of cellular material was studied by examining uncoated cells during the course of etching in the specimen chamber of a scanning electron microscope. Repeated examination of the cells during etching faciliated the interpretation of features in the etched surface.Cells were initially fixed in glutaraldehyde prior to being dispersed in a monolayer on a conductive silicon wafer originally used as a substrate for electron microprobe specimens. The cells were subsequently dehydrated in ethanol and critical point dried in carbon dioxide. Etching was carried out in the specimen chamber of an ETEC scanning electron microscope using an ETEC ion beam etching device. An 18 KV argon ion beam with a 40° angle of incidence was utilized for etching. The cells were rotated at about 4 rpms. Etching was interrupted at specific time intervals and the cells were examined as they remained uncoated in the specimen chamber. Ten through 20 KV electron beams were used to examine the cells.

Reduced Time for Uniform Etching of Cu Power Planes during FIB Editing

2003 ◽  
Vol 766 ◽  
Author(s):  
V.V. Makarov ◽  
W.B. Thompson ◽  
T.R. Lundquist
Keyword(s):  
Etch Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Dry Etching ◽  
Reduced Time

AbstractDry etching of Cu challenges the Focused Ion Beam (FIB) removal of metallizations. Cu metallizations are comprised of numerous, randomly orientated crystallites. Each orientation shows a different etch rate under ion bombardment, leading to unacceptable damage to underlying dielectric. An improved methodology for uniform Cu etching over dielectric consists of three steps: 1) Exposure, 2) Initial off-normal bombardment and 3) Chemistry assisted ion bombardment. Comparison is made with and without preliminary off-normal bombardment. It is shown that Cu etching preceded by off-normal bombardment was completed ∼50% sooner with decreased dielectric over-etch.

Faster and More Efficient FIB Sample Preparation: Exploring Single-Raster Staircase Patterning at Glancing Angle of Incidence

2020 ◽  
Author(s):  
Joseph Favata ◽  
Valery Ray ◽  
Sina Shahbazmohamadi
Keyword(s):  
Sample Preparation ◽  
Material Removal ◽  
Bulk Material ◽  
Ion Beam ◽  
Process Time ◽  
Depth Of Cut ◽  
Angle Of Incidence ◽  
Glancing Angle ◽  
Beam Incidence ◽  
Slope Direction

Abstract Focused Ion Beam sample preparation for electron microscopy often requires large volumes of material to be removed. Prior efforts to increase the rate of bulk material removal were mainly focused on increasing the primary ion beam current. Enhanced sputtering yield at glancing ion beam incidence is known, but has not found widespread use in practical applications. In this study, etching at glancing ion beam incidence was explored for its advantages in increasing the rate of bulk material removal. Anomalous enhancement of material removal was observed with single raster etching in along-the-slope direction with toward-FIB raster propagation at glancing ion beam incidence. Material removal was inhibited with raster propagation away from FIB. The effects of glancing angle and ion dose on depth of cut and volume of removed material were also recorded. We demonstrated that the combination of single-raster etching in along-the-slope direction by raster propagating toward-FIB at glancing incidence and a “staircase” type of etching strategy holds promise for reducing the process time for bulk material removal in FIB sample preparation applications.

Roughening of Au(111) Surfaces During Ion Beam Erosion: A Scanning Tunneling Microscope and X-Ray Diffraction Study

1999 ◽  
Vol 570 ◽  
Author(s):  
A. Judy ◽  
M.V. Ramana Murty ◽  
E. Butler ◽  
J. Pomeroy ◽  
B.H. Cooper ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Normal Incidence ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Tunneling Microscopy ◽  
X Ray ◽  
Glancing Angle

ABSTRACTUsing Scanning Tunneling Microscopy(STM) and X-ray diffraction(XRD), we have studied the development of surface roughness on Au(111) during 500eV Ar+ ion irradiation at different angles. During normal incidence erosion the surface roughens and pattern formation occurs. The surface morphology is a mixture of mounds and pits superimposed onto a larger structure of channels and valleys. The characteristic spacing between features grows with a power law behavior t27, where t is the amount of time the sample was irradiated, in agreement with previous measurements[l]. At glancing angles, erosion proceeds smoothly, but not in layer-by-layer fashion. Finally, a combination of glancing angle and normal incidence erosion is used to create a rippled morphology

Focused ION Beam Etching of GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

AbstractWe have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RME) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10-4 μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.

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