Characterization of etch rate and anisotropy in the temperature-controlled chemically assisted ion beam etching of GaAs

1990 ◽  
Vol 8 (5) ◽  
pp. 1075 ◽  
Author(s):  
W. J. Grande
Keyword(s):  
Etch Rate ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Temperature Controlled

Characterization of TMR Head Durability against Lapping Based on Magnetic Performance

2012 ◽  
Vol 523-524 ◽  
pp. 961-966
Author(s):  
Hideaki Tanaka ◽  
Yukio Maeda
Keyword(s):  
Ion Beam ◽  
Hysteresis Loops ◽  
Areal Density ◽  
Noise Spectrum ◽  
Crystallographic Analysis ◽  
Magnetic Characteristics ◽  
Ion Beam Etching ◽  
Verification Method ◽  
Magnetic Performance

Magnetic recording technologies are continuing to advance toward higher areal densities, driven by the availability of tunneling magnetoresistive (TMR) heads. However, high areal density heads require smaller physical dimensions, and this can render TMR heads more vulnerable to mechanical stresses generated during the lapping process. Although is important to verify the durability of TMR heads against lapping, it is very difficult to perform a crystallographic analysis of the affected layer because of the small dimensions involved. In this study, we attempted to establish an advanced TMR head verification method based on a magnetic performance analysis involving micro-Kerr hysteresis loops and the magnetic noise spectrum. We found that the magnetic performance changed when nanoscale scratches were removed from the lapped surface using ion beam etching. This indicates that the lapping process produces an affected layer which deteriorates the magnetic characteristics of the TMR head. A correlation was also found between the change in magnetic performance and the morphology of lapped surface.

scholarly journals Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

1998 ◽  
Vol 537 ◽  
Author(s):  
Daniel Hofstetter ◽  
Robert L. Thornton ◽  
Linda T. Romano ◽  
David P. Bour ◽  
Michael Kneissl ◽  
...  
Keyword(s):  
Ion Beam ◽  
Device Fabrication ◽  
Distributed Feedback ◽  
Coupling Scheme ◽  
Optically Pumped ◽  
Ion Beam Etching ◽  
Measurement Results ◽  
Dfb Laser ◽  
First Time

AbstractWe present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1. 1 A were observed in 500 μm long and 10 μm wide devices. The 3rd order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.

Characterization of Ar+ based Ion Beam Etching of GaN

2006 ◽  
Author(s):  
Rafal Dylewicz ◽  
Sergiusz Patela ◽  
Regina Paszkiewicz ◽  
Marek Tlaczala ◽  
Zbigniew Ryszka
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching

Ion beam etching and surface characterization of indium phosphide

1986 ◽  
Vol 48 (19) ◽  
pp. 1285-1287 ◽  
Author(s):  
N. Bouadma ◽  
P. Devoldere ◽  
B. Jusserand ◽  
P. Ossart
Keyword(s):  
Indium Phosphide ◽  
Surface Characterization ◽  
Ion Beam ◽  
Ion Beam Etching

scholarly journals Detailed near-surface nanoscale damage precursor measurement and characterization of fused silica optics assisted by ion beam etching

2019 ◽  
Vol 27 (8) ◽  
pp. 10826 ◽  
Author(s):  
Yaoyu Zhong ◽  
Feng Shi ◽  
Ye Tian ◽  
Yifan Dai ◽  
Ci Song ◽  
...  
Keyword(s):  
Ion Beam ◽  
Fused Silica ◽  
Ion Beam Etching ◽  
Near Surface ◽  
Damage Precursor

Characterization of Sidewall Damage Induced by Reactive Ion-Beam Etching

1992 ◽  
Vol 31 (Part 1, No. 5A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching

Ion Beam Etching of CVD Diamond Enhanced by Prior Au and O Implantation.

2002 ◽  
Vol 750 ◽  
Author(s):  
Patrick W. Leech ◽  
Geoffrey K. Reeves ◽  
Anthony S. Holland ◽  
Mark C. Ridgway
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Etching ◽  
Etch Rate ◽  
Ion Beam ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Similar Increase ◽  
Ion Beam Etching ◽  
Uniform Region ◽  
Ar Gas

ABSTRACTDiamond films were implanted with Au or O ions at multiple energies in order to produce a uniform region of C vacancies. Analysis of the implanted films by Raman spectroscopy has shown that the proportion of non-diamond or amorphous carbon increased with dose (5 × 1013 − 5 × 1015 ions/cm2). For implantation with Au ions, a complete amorphisation near to the surface was evident at a dose of 5 × 1015 ions/cm2. We have examined the ion beam etch (IBE) rate of the films as a function of the implant species and dose. The etching experiments were performed using either Ar or Ar/O2 gases at a bias energy of 500 -1,000 eV. In Ar gas, the process of sputter etching has produced a similar increase in etch rate with dose for both the Au and O implants. In Ar/ O2 gases, the process of ion-enhanced chemical etching produced greater etch rates than obtained in Ar gas with higher rates for the Au than the O implants.

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