Microstructure of Niobium Films Oriented By Non-Normal Incidence Ion Bombardment During Growth

1985 ◽  
Vol 51 ◽  
Author(s):  
J.M.E. Harper ◽  
D.A. Smith ◽  
L.S. Yu ◽  
J.J. Cuomo
Keyword(s):  
Room Temperature ◽  
Film Growth ◽  
Ion Beam ◽  
Normal Incidence ◽  
Ion Bombardment ◽  
Fiber Texture ◽  
Thin Film Growth ◽  
Transmission Electron ◽  
Glancing Angle ◽  
Beam Orientation

ABSTRACTWe demonstrate that non-normal incidence ion bombardment applied during thin film growth has a pronounced alignment effect on crystallographic orientation. Restricted fiber texture is achieved in Nb films deposited at room temperature onto amorphous silica substrates with simultaneous 200 eV Ar+ ion bombardment at 20 degrees from glancing angle. Xray pole figure measurements and transmission electron diffraction show that the alignment direction is a channeling direction for the incident ions between (110) planes. The degree of alignment increases linearly with the fraction resputtered by the ion beam. Recommendations are given for optimizing this ion beam orientation effect.

Angle of Incidence Effects in Ion Beam Processing

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. E. Harper ◽  
S. E. Hörnström ◽  
P. J. Rudeck ◽  
R. M. Bradley
Keyword(s):  
Etch Rate ◽  
Ion Beam ◽  
Etching Rate ◽  
Normal Incidence ◽  
Ion Bombardment ◽  
Angle Of Incidence ◽  
Processing Parameter ◽  
Ion Beam Etching ◽  
Characteristic Wavelength ◽  
Glancing Angle

ABSTRACTThe angle of incidence of ion bombardment is an important processing parameter, which can strongly affect the shape, composition and microstructure of bombarded surfaces. We describe several phenomena directly related to the angle of ion incidence during ion beam etching and ion beam assisted deposition. First, the development of surface ripple topography during ion beam etching is modeled. Surface perturbations are shown to grow under ion bombardment, while surface selfdiffusion acts to select a characteristic wavelength. The orientation of these characteristic ripples changes by 90° as the angle of ion incidence is varied from near-normal to near-glancing angle. The second example is the effect of angle of incidence on the etching rate of Ta under mixed Ar-O2 ion bombardment. For pure Ar bombardment, the sputtering yield of Ta increases with angle of ion incidence slower than secθ, producing a maximum etch rate at normal incidence. Above a critical pressure of O2, however, the yield increases faster than secθ dependence, producing a maximum etch rate at a non-normal angle of incidence. The third example is the effect of angle of incidence on the preferential sputtering of Al relative to Cu in Al-5% Cu thin films. Films deposited by evaporation with simultaneous Ar ion bombardment at 500 eV show a depletion of Al relative to Cu. This composition change is enhanced by increasing the angle of incidence away from normal, resulting in a higher Cu concentration in a film deposited on a tilted surface. Finally, a mechanism is described for the generation of oriented microstructure in films deposited under simultaneous glancing-angle ion bombardment, demonstrated previously for Nb. Grain orientations are selected which allow channelling of the ion beam. These results show that the shape, composition and microstructure of films deposited under ion bombardment respond to changes in angle of incidence, and that these effects need further study and modeling.

The annealed (0001) α-alumina surface and its influence on thin-film growth

1995 ◽  
Vol 53 ◽  
pp. 336-337
Author(s):  
Michael W. Bench ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Energy Calculations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Low Energy Electron ◽  
Surface Nature

The growth of semiconductors, superconductors, metals, and other insulators has been investigated using alumina substrates in a variety of orientations. The surface state of the alumina (for example surface reconstruction and step nature) can be expected to affect the growth nature and quality of the epilayers. As such, the surface nature has been studied using a number of techniques including low energy electron diffraction (LEED), reflection electron microscopy (REM), transmission electron microscopy (TEM), molecular dynamics computer simulations, and also by theoretical surface energy calculations. In the (0001) orientation, the bulk alumina lattice can be thought of as a layered structure with A1-A1-O stacking. This gives three possible terminations of the bulk alumina lattice, with theoretical surface energy calculations suggesting that termination should occur between the Al layers. Thus, the lattice often has been described as being made up of layers of (Al-O-Al) unit stacking sequences. There is a 180° rotation in the surface symmetry of successive layers and a total of six layers are required to form the alumina unit cell.

Thickness and substrate effects on AlN thin film growth at room temperature

2008 ◽  
Vol 43 (3) ◽  
pp. 309-313 ◽  
Author(s):  
B. Abdallah ◽  
C. Duquenne ◽  
M. P. Besland ◽  
E. Gautron ◽  
P. Y. Jouan ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Film Growth ◽  
Thin Film Growth ◽  
Substrate Effects

Initial Stage of para-Hexaphenyl Thin-Film Growth Controlled by the Step Structure of the Ion-Beam-Modified TiO2(110) Surface

2019 ◽  
Vol 123 (33) ◽  
pp. 20257-20269 ◽  
Author(s):  
K. Szajna ◽  
M. Kratzer ◽  
W. Belza ◽  
A. Hinaut ◽  
D. Wrana ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Step Structure ◽  
Initial Stage

La1−xBaxMnOz thin film growth by ion beam sputtering: effects of oxygen partial pressure

2001 ◽  
Vol 229 (1-4) ◽  
pp. 415-418 ◽  
Author(s):  
M. Tada ◽  
J. Yamada ◽  
V.V. Srinivasu ◽  
V. Sreedevi ◽  
H. Kohmoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Nucleation, growth, and aggregation of gold on polyimide surfaces

1999 ◽  
Vol 14 (9) ◽  
pp. 3673-3683 ◽  
Author(s):  
Y. Travaly ◽  
L. Zhang ◽  
Y. Zhao ◽  
R. Pfeffer ◽  
K. Uhrich ◽  
...  
Keyword(s):  
Room Temperature ◽  
Film Growth ◽  
Contact Angles ◽  
Thin Film Growth ◽  
Hole Filling ◽  
Temperature Dependent ◽  
Au Film ◽  
The Stability ◽  
Pi System ◽  
Thermal Stability Of

The growth of ultrathin gold films on polyimide (PI) surfaces and the stability of the films upon thermal annealing have been studied using a combination of various techniques. With scanning electron microscopy (SEM) we observe that, at room temperature, the Au film initially grows by nucleation of compact Au islands. With increasing metal coverage, the clusters partially agglomerate to produce a wormlike structure. Finally, percolation, hole-filling, and continuous thin-film growth are observed. To evaluate the thermal stability of the Au/PI system, annealing at various temperatures was performed on films that displayed the wormlike structure. SEM results indicate strong temperature-dependent changes in film morphology. Finally, from our SEM data we determine contact angles, allowing us to estimate interfacial and adhesion energies.

Characterization of pulsed laser deposited PbO/MoS2 by transmission electron microscopy

1994 ◽  
Vol 9 (1) ◽  
pp. 236-245 ◽  
Author(s):  
S.D. Walck ◽  
M.S. Donley ◽  
J.S. Zabinski ◽  
V.J. Dyhouse
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sodium Chloride ◽  
Room Temperature ◽  
Film Growth ◽  
Composite Films ◽  
Pulsed Laser ◽  
Two Phase ◽  
Transmission Electron ◽  
20 Nm

Films of PbO/MoS2, grown by pulsed laser deposition, exhibit a significant improvement in tribological performance compared to MoS2 films grown by the same process. The microstructure and crystallography of PbO/MoS2 composite films were investigated using transmission electron microscopy (TEM) to identify the features responsible for this tribological improvement. Self-supporting samples were prepared from pulsed laser deposited, PbO/MoS2 thin films grown on single crystal sodium chloride substrates. Films deposited at room temperature exhibited a two-phase microstructure with one of the phases being amorphous. X-ray microanalysis results showed that the crystalline phase had significantly higher concentration ratios of Mo/Pb, Mo/S, and Pb/S than did the amorphous phase. Films grown at 300 °C were polycrystalline, with a grain size of about 20 nm, and had a NaCl type structure which was isomorphous to PbS. The grains had rectangular shape, and exhibited preferred orientation with the sodium chloride substrate. The concentration of S for these films was approximately 80% of the S concentration for films grown at room temperature. Both the high temperature and room temperature films had S concentrations which were higher than expected from the MoS2 in the target; this was attributed to gettering of the S in the vacuum chamber by Pb. The electron diffraction results, together with previously published results, suggest that the crystal structure of the phases in these films is not responsible for the improvement in tribological properties. However, the microstructural components formed during film growth do determine the wear-induced chemical reaction pathways.

Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Film Growth ◽  
Texture Evolution ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Buffer Layers ◽  
Ito Thin Films

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

Sign in / Sign up

Export Citation Format

Share Document